MUBW30-12E6K
Converter - Brake - Inverter
Module
(CBI )
SPT IGBT
Three Phase
Rectifier
Brake
Chopper
=
Three Phase
Inverter
= 200 V
=
29 A
2.9 V
V
RRM
= 600 V V
CES
I
DAVM25
= 30 A I
C25
I
FSM
= 200 V V
CES
9 A I
C25
= 300 A V
CE(sat)
=
2.9 V V
CE(sat)
=
Part name
(Marking on product)
MUBW30-2E6K
-o
u
t
E72873
Pin configuration see outlines.
h
Features:
a
Application:
AC motor drives with
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
• Electric braking operation
s
Package:
• UL registered
• Industry standard E-pack
• High level of integration - only one
power semiconductor module required
for the whole drive
• Inverter with SPT IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast and soft reverse recovery
• Industry standard package with insu
lated copper base plate and soldering
pins for PCB mounting
• Temperature sense included
IXYS reserves the right to change limits, test conditions and dimensions.
p
e
20073a
© 2007 IXYS All rights reserved
-9
MUBW30-12E6K
Ouput Inverter T1 - T6
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Conditions
T
VJ
= 25°C to 50°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 30 A; V
GE
= 5 V
I
C
= 0.6 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
CE
= 0 V; V
GE
= ±20 V
V
CE
= 25 V; V
GE
= 0 V; f = MHz
V
CE
= 600 V; V
GE
= 5 V; I
C
= 20 A
inductive load
V
CE
= 600 V; I
C
= 20 A
V
GE
= ±5 V; R
G
= 68
W
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
min.
typ.
max.
200
±20
±30
30
2
30
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
3.
3.8
4.5
0.6
3.6
6.5
200
80
00
20
0
320
80
4.
.5
45
R
thJC
R
thCH
s
t
SC
(SCSOA)
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
V
CE
= 900 V; V
GE
= ±5 V;
R
G
= 68
W;
non-repetitive
(per IGBT)
(per IGBT)
e
RBSOA; V
GE
= ±5 V; R
G
= 68
W
L = 00 µH; clamped induct. load T
VJ
= 25°C
V
CEmax
= V
CES
- L
S
·di/dt
T
VJ
= 25°C
-o
u
t
T
VJ
= 25°C
min.
T
VJ
= 50°C
T
C
= 25°C
T
C
= 80°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
0
0.95
0.35
µs
K/W
K/W
h
Output Inverter D1 - D6
Symbol
V
RRM
I
F25
I
F80
V
F
I
RM
t
rr
E
rec(off)
R
thJC
R
thCH
Definitions
forward current
a
Ratings
Conditions
typ.
max.
200
49
32
2.9
2.0
27
50
tbd
0.9
0.3
T
C
= 25°C unless otherwise stated
Unit
V
A
A
V
V
A
ns
µJ
K/W
K/W
max. repetitve reverse voltage
p
forward voltage
max. reverse recovery current
reverse recovery time
reverse recovery energy
thermal resistance junction to case
thermal resistance case to heatsink
I
F
= 30 A; V
GE
= 0 V
V
R
= 600 V
di
F
/dt = -500 A/µs
I
F
= 30 A; V
GE
= 0 V
(per diode)
(per diode)
IXYS reserves the right to change limits, test conditions and dimensions.
20073a
© 2007 IXYS All rights reserved
2-9
MUBW30-12E6K
Brake Chopper T7
Ratings
Symbol
V
CES
V
GES
V
GEM
I
C25
I
C80
P
tot
V
CE(sat)
V
GE(th)
I
CES
I
GES
C
ies
Q
G(on)
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
CM
Definitions
collector emitter voltage
max. DC gate voltage
max. transient collector gate voltage
collector current
total power dissipation
collector emitter saturation voltage
gate emitter threshold voltage
collector emitter leakage current
gate emitter leakage current
input capacitance
total gate charge
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Conditions
T
VJ
= 25°C to 50°C
continuous
transient
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
I
C
= 5 A; V
GE
= 5 V
I
C
= 0.4 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
CE
= 0 V; V
GE
= ±20 V
V
CE
= 25 V; V
GE
= 0 V; f = MHz
V
CE
= 600 V; V
GE
= 5 V; I
C
= 0 A
inductive load
V
CE
= 600 V; I
C
= 0 A
V
GE
= ±5 V; R
G
= 82
W
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
min.
typ.
max.
200
±20
±30
9
3
90
Unit
V
V
V
A
A
W
V
V
V
mA
mA
nA
pF
nC
ns
ns
ns
ns
mJ
mJ
A
2.9
3.5
4.5
0.8
3.4
6.5
0.5
00
600
45
45
40
290
60
.2
.
20
R
thJC
R
thCH
s
t
SC
(SCSOA)
e
RBSOA; V
GE
= ±5 V; R
G
= 82
W
L = 00 µH; clamped induct. load T
VJ
= 25°C
V
CEmax
= V
CES
- L
S
·di/dt
V
CE
= 720 V; V
GE
= ±5 V;
R
G
= 82
W;
non-repetitive
(per IGBT)
(per IGBT)
T
VJ
= 25°C
-o
u
t
T
VJ
= 25°C
min.
T
VJ
= 50°C
T
C
= 25°C
T
C
= 80°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
short circuit safe operating area
thermal resistance junction to case
thermal resistance case to heatsink
0
.35
0.45
µs
K/W
K/W
h
Brake Chopper D7
Symbol
V
RRM
I
F25
I
F80
V
F
I
R
I
RM
t
rr
R
thJC
R
thCH
Definitions
forward current
a
Conditions
Ratings
typ. max.
200
5
0
3.5
2.0
0.06
0.2
3
0
2.5
0.85
Unit
V
A
A
V
V
mA
mA
A
ns
K/W
K/W
max. repetitive reverse voltage
p
forward voltage
reverse current
max. reverse recovery current
reverse recovery time
thermal resistance junction to case
thermal resistance case to heatsink
I
F
= 5 A; V
GE
= 0 V
V
R
= V
RRM
V
R
= 600 V; I
F
= 0 A
di
F
/dt = -400 A/µs
(per diode)
(per diode)
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20073a
© 2007 IXYS All rights reserved
3-9
MUBW30-12E6K
Input Rectifier Bridge D8 - D13
Symbol
V
RRM
I
FAV
I
DAVM
I
FSM
P
tot
Symbol
V
F
I
R
R
thJC
R
thCH
Definitions
max. repetitive reverse voltage
average forward current
max. average DC output current
max. surge forward current
total power dissipation
Conditions
sine 80°
rectangular; d =
/
3
; bridge
t = 0 ms; sine 50 Hz
T
C
= 80°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
Maximum Ratings
600
3
89
320
80
V
A
A
A
W
Conditions
forward voltage
reverse current
thermal resistance junction to case
thermal resistance case to heatsink
Characteristic Values
min.
I
F
= 30 A
V
R
= V
RRM
(per diode)
(per diode)
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
0.45
typ.
.0
.
0.4
.4
max.
.35
0.02
V
V
mA
mA
K/W
K/W
Temperature Sensor NTC
Symbol
R
25
B
25/85
Module
Symbol
T
VJ
T
VJM
T
stg
V
ISOL
M
d
d
S
d
A
Weight
Definitions
operating temperature
max. virtual junction temperature
storage temperature
isolation voltage
mounting torque
creep distance on surface
strike distance through air
t
u
Conditions
min.
4.45
T
C
= 25°C
Definitions
resistance
Ratings
typ. max.
4.7
350
5.0
Unit
kW
K
-o
Conditions
min.
-40
-40
2.0
2.7
2.7
e
Ratings
typ. max.
25
50
25
2500
2.2
Unit
°C
°C
°C
V~
Nm
mm
mm
h
a
s
(M4)
I
ISOL
< mA; 50/60 Hz
40
g
I
V
0
R
0
p
Equivalent Circuits for Simulation
Symbol
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
V
0
R
0
Definitions
rectifier diode
IGBT
free wheeling diode
Conditions
D8 - D3
T - T6
D - D6
T7
D7
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
min.
Ratings
typ. max.
0.90
9
.0
90
.5
4
.5
20
.46
63
Unit
V
mW
V
mW
V
mW
V
mW
V
mW
IGBT
free wheeling diode
T
C
= 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20073a
© 2007 IXYS All rights reserved
4-9
MUBW30-12E6K
Outline Drawing
Dimensions in mm ( mm = 0.0394“)
Product Marking
Ordering
Standard
Part Name
MUBW 30-2E6K
Marking on Product Delivering Mode Base Qty Ordering Code
MUBW30-2E6K
Box
0
499 323
IXYS reserves the right to change limits, test conditions and dimensions.
p
h
a
s
e
-o
u
t
20073a
© 2007 IXYS All rights reserved
5-9
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