Philips Semiconductors
Product specification
Breakover diodes
BR211 series
GENERAL DESCRIPTION
A range of bidirectional, breakover
diodes in an axial, hermetically
sealed, glass envelope. These
devices feature controlled breakover
voltage and high holding current
together with high peak current
handling
capability.
Typical
applications
include
transient
overvoltage
protection
in
telecommunications equipment.
QUICK REFERENCE DATA
SYMBOL
V
(BO)
I
H
I
TSM
PARAMETER
BR211-140 to 280
Breakover voltage
Holding current
Non-repetitive peak current
MIN.
140
150
-
MAX.
280
-
40
UNIT
V
mA
A
OUTLINE - SOD84
BR211-XXX
SYMBOL
XXX denotes voltage grade
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
D
I
TSM1
I
TSM2
I
2
t
dI
T
/dt
P
tot
P
TM
T
stg
T
a
T
vj
PARAMETER
Continuous voltage
Non repetitive peak current
Non repetitive on-state current
I
2
t for fusing
Rate of rise of on-state current
after V
(BO)
turn-on
Continuous dissipation
Peak dissipation
Storage temperature
Operating ambient temperature
Overload junction temperature
10/320
µs
impulse equivalent to
10/700
µs,
1.6 kV voltage impulse
(CCITT K17)
half sine wave; t = 10 ms;
T
j
= 70 ˚C prior to surge
t
p
= 10 ms
t
p
= 10
µs
T
a
= 25˚C
t
p
= 1 ms; T
a
= 25˚C
off-state
on-state
CONDITIONS
MIN.
-
-
-
-
-
-
-
-65
-
-
MAX.
75% of
V
(BO)typ
40
15
1.1
50
1.2
50
150
70
150
UNIT
V
A
A
A
2
s
A/µs
W
W
˚C
˚C
˚C
August 1996
1
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
THERMAL RESISTANCES
SYMBOL
R
th j-e
R
th j-a
Z
th j-a
R
th e-tp
R
th e-a
R
th tp-a
PARAMETER
Thermal resistance junction to
envelope
Thermal resistance junction to
ambient
Thermal impedance junction to
ambient
Thermal resistance envelope to
tie point
Thermal resistance envelope to
ambient
Thermal resistance tie point to
ambient
CONDITIONS
MIN.
-
mounted as fig:12
t
p
= 1 ms
lead length = 5 mm
lead length = 10 mm
lead length = 5 mm
lead length = 10 mm
mounted as fig:12
mounted with 1 cm
2
copper
laminate per lead.
mounted with 2.25 cm2 copper
laminate per lead
-
-
-
-
-
-
-
-
-
TYP.
22
105
2.62
15
30
440
350
70
55
45
-
-
-
-
-
-
-
-
MAX.
-
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
TM1
V
(BR)
V
(BO)
PARAMETER
On-state voltage
Avalanche voltage (min)
Breakover voltage (max)
CONDITIONS
I
TM
= 2 A
I
(BR)
= 10
mA
I
≤
I
S
, t
p
= 100
µs
BR211-140
BR211-160
BR211-180
BR211-200
BR211-220
BR211-240
BR211-260
BR211-280
MIN.
-
123
140
158
176
193
211
228
246
-
150
100
10
-
TYP.
-
140
160
180
200
220
240
260
280
+0.1
-
-
200
-
MAX.
2.5
157
180
202
224
247
269
292
314
-
-
-
1000
10
UNIT
V
V
V
V
V
V
V
V
V
V
V
%/K
mA
mA
mA
µA
S
(br)
I
H2
I
S3
I
D4
Temperature coefficient of V
(BR)
Holding current
T
j
= 25˚C
T
j
= 70˚C
Switching current
t
p
= 100
µs
Off-state current
V
D
= 85% V
(BR)min
, T
j
= 70˚C
1
Measured under pulsed conditions to avoid excessive dissipation
2
The minimum current at which the diode will remain in the on-state
3
The avalanche current required to switch the diode to the on-state
4
Measured at maximum recommended continuous voltage. Illuminance
≤
500 lux (daylight); relative
humidity < 65%.
August 1996
2
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
dV
D
/dt
C
j
PARAMETER
Linear rate of rise of off-state
voltage that will not trigger any
device
Off-state capacitance
CONDITIONS
V
(DM)
= 85% V
(BR)min
; T
j
= 70 ˚C
V
D
= 0 V; f = 1 kHz to 1 MHz
MIN.
-
-
TYP.
-
-
MAX.
2000
100
UNIT
V/µs
pF
current
IT
VT
20
ITSM / A
BR211
I
ITSM2
time
15
IS
IH
ID
V(BR)
I(BR)
VD
voltage
5
V(BO)
10
Symbol
Symmetric BOD
0
1
10
100
Number of impulses
1000
10000
Fig.1. Definition of breakover diode characteristics.
Fig.3. Maximum permissible non-repetitive on-state
current based on sinusoidal currents; f = 50 Hz;
device triggered at the start of each pulse; T
j
= 70˚C
prior to surge.
V(BR)(Tj)
V(BR)(25 C)
current
1.06
100%
90%
ITSM
1.04
1.02
1.00
50%
0.98
0.96
30%
0.94
0.92
0
10us
700us
time
0.90
-40
-20
0
20
40
Tj / C
60
80
100
Fig.2. Test waveform for high voltage impulse (I
TSM1
)
according to CCITT vol IX-Rec K17.
Fig.4. Normalised avalanche breakdown voltage V
(BR)
and V
(BO)
as a function of temperature.
August 1996
3
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
20
IT / A
Tj = 25 C
Tj = 150 C
10 IH / A
15
1
10
typ
max
0.1
min
5
0.01
0
1
2
VT / V
3
4
0.001
-50
0
50
Tj / C
100
150
Fig.5. On-state current as a function of on-state
voltage; t
p
= 200
µ
s to avoid excessive dissipation.
100 ID / uA
Fig.8. Minimum holding current as a function of
temperature.
100
Cj / pF
10
max
typ
BR211-140
BR211-280
10
1
0.1
-40
-20
0
20
40
Tj / C
60
80
100
1
1
10
VD / V
100
1000
Fig.6. Maximum off-state current as a function of
temperature.
Fig.9. Typical junction capacitance as a function of
off-state voltage, f = 1 MHz; T
j
= 25˚C.
Zth / (K/W)
BR211
10 IS / A
1000
1
max
typ
100
0.1
10
0.01
min
1
P
D
t
p
t
0.001
-50
0
50
Tj / C
100
150
0.1
10us
1ms
0.1s
tp / s
10s
1000s
Fig.7. Switching current as a function of junction
temperature.
Fig.10. Transient thermal impedance. Z
th j-a
= f(t
p
).
August 1996
4
Rev 1.200
Philips Semiconductors
Product specification
Breakover diodes
BR211 series
junction
Rth j-e
envelope
Rth e-tp
tie-point
Rth tp-a
3
50
50
Rth e-a
7
25
2
ambient
Fig.11. Components of thermal resistance,
Rthe
−
a.(Rthe
−
tp
+
Rthtp
−
a)
Rth j
−
a
=
Rth j
−
e
+
(Rthe −
a
+
Rthe
−
tp
+
Rthtp
−
a)
Fig.12. Mounting on pcb used for R
th
measurement.
August 1996
5
Rev 1.200
嵌入式系统
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