Bulletin PD-20789 07/04
MBRS120TRPbF
SCHOTTKY RECTIFIER
1 Amp
I
F(AV)
= 1.0Amp
V
R
= 20V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ t
p
= 5 µs sine
V
F
T
J
@ 1.0Apk, T
J
= 125°C
range
Description/ Features
Units
A
V
A
V
°C
The MBRS120TRPbF surface-mount Schottky rectifier has
been designed for applications requiring low forward drop and
small foot prints on PC boards. Typical applications are in disk
drives, switching power supplies, converters, free-wheeling
diodes, battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Value
1.0
20
310
0.35
- 65 to 150
Case Styles
MBRS120TRPbF
SMB
www.irf.com
1
MBRS120TRPbF
Bulletin PD-20789 07/04
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
MBRS120TRPbF
20
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current
Non Repetitive Avalanche Energy
Repetitive Avalanche Current
Value
1.0
310
40
2.0
0.8
Units Conditions
A
50% duty cycle @ T
L
= 138°C, rectangular wave form
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
mJ
A
T
J
= 25 °C, I
AS
= 1A, L = 4mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(1)
Typ.
0.42
0.46
0.33
0.39
0.30
0.36
Max.
0.45
0.52
0.37
0.45
0.35
0.43
0.2
6.0
20
-
-
10000
Units
V
V
V
V
V
V
mA
mA
mA
pF
nH
V/ µs
Conditions
@ 1A
@ 2A
@ 1A
@ 2A
@ 1A
@ 2A
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100kHz to
1Mhz), @ 25°C
Measured lead to lead 5mm from package body
(Rated V
R
)
V
R
= rated V
R
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
I
RM
Max. Reverse Leakage Current (1)
0.015
2.0
7.0
C
T
L
S
Typical Junction Capacitance
Typical Series Inductance
110
2.0
-
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Storage Temperature Range
Value
- 65 to 150
30
Units
°C
°C
°C/W DC operation
80
°C/W
Conditions
Max. Junction Temperature Range (*) - 65 to 150
R
thJL
Max. Thermal Resistance Junction
to Lead
(**)
R
thJA
Max. Thermal Resistance Junction
to Ambient
Wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
dTj
<
1
Rth( j-a)
0.10(0.003) gr (oz)
SMB
IR12
(**) Mounted 1 inch square PCB
Similar DO-214AA
thermal runaway condition for a diode on its own heatsink
2
www.irf.com
MBRS120TRPbF
Bulletin PD-20789 07/04
100
Tj = 150˚C
Reverse Current - I
R
(mA)
10
10
1
0.1
0.01
0.001
125˚C
100˚C
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
F
(A)
0.0001
0
5
10
15
20
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
1
Tj = 150˚C
Tj = 125˚C
1000
Junction Capacitance - C
T
(pF)
Tj = 100˚C
Tj = 25˚C
Tj = 25˚C
100
0.1
0.2
0.4
0.6
0.8
1
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0
10
0
4
8
12
16
20
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
www.irf.com
3
MBRS120TRPbF
Bulletin PD-20789 07/04
150
Allowable Lead Temperature (°C)
Allowable Power Loss (Watts)
0.5
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
145
0.4
0.3
0.2
0.1
0
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS Limit
DC
140
Square wave
DC
135
see note (2)
130
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6
Average Forward Current - I
F(AV)
(A)
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
0
0.4
0.8
1.2
1.6
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Non-Repetitive Surge Current - I
FSM
(A)
1000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
100
Tj = 25˚C
10
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D)
4
www.irf.com
MBRS120TRPbF
Bulletin PD-20789 07/04
Outline Table
Device Marking: IR12
CATHODE
ANODE
2.15 (.085)
1.80 (.071)
3.80 (.150)
3.30 (.130)
1
2
4.70 (.185)
4.10 (.161)
1
POLARITY
2 PART NUMBER
2.40 (.094)
1.90 (.075)
1.30 (.051)
0.76 (.030)
0.30 (.012)
0.15 (.006)
5.60 (.220)
5.00 (.197)
2.5 TYP.
(.098 TYP.)
SOLDERING PAD
2.0 TYP.
(.079 TYP.)
4.2 (.165)
4.0 (.157)
Outline SMB
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR12
VOLTAGE
CURRENT
IR LOGO
PYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
