MBRS120T3
Schottky Power Rectifier
Surface Mount Power Package
Employs the Schottky Barrier principle in a large area
metal-to-silicon power diode. State-of-the-art geometry
features epitaxial construction with oxide passivation
and metal overlay contact. Ideally suited for low voltage,
high frequency rectification, or as free wheeling and
polarity protection diodes, in surface mount applications
where compact size and weight are critical to the
system.
SCHOTTKY BARRIER RECTIFIER
SMB (DO-214AA)
1.1
±
0.3
5.4
±
0.15
4.8
±
0.15
2.0
±
0.1
3.6
±
0.15
2.3
±
0.2
0.22
±
0.07
FEATURES :
* Very Low Forward Voltage Drop
(0.55 Volts Max @ 1.0A, T
J
= 25°C)
* Small Compact Surface Mountable Package
* Highly Stable Oxide Passivated Junction
* Guardring for Stress Protection
* Pb / RoHS Free
Dimensions in millimeter
MECHANICAL DATA :
*
*
*
*
*
*
Case : SMB Molded plastic
Epoxy : UL94V-O rate flame retardant
Lead : Lead Formed for Surface Mount
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.1079 gram
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current (T
L
= 115°C)
Maximum Non-repetitive Peak Surge Current
(Surge applied at rated load conditions half wave, single phase)
Maximum Instantaneous Forward Voltage (Note 1)
(I
F
= 1.0 A, T
J
= 25°C)
Maximum Instantaneous Reverse Current (Note1)
Thermal Resistance - Junction to Lead (T
L
= 25°C)
Operating Junction Temperature
Note :
(1) Pulse Test : Pulse Width = 300µs Duty Cycle
≤
2%
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
V
F
I
R
R
θ
JL
TJ
VALUE
20
20
20
1.0
40
0.60
1.0 (T
J
= 25°C)
10 (T
J
= 100°C)
12
- 65 to +125
UNIT
V
V
V
A
A
V
mA
°C/W
°C
Page 1 of 2
Rev. 01 : July 16, 2005
RATING AND CHARACTERISTIC CURVES ( MBRS120T3 )
FIG.1 - CURRENT DERATING (CASE)
AVERAGE FORWARD CURRENT, (A)
AVERAGE POWER DISSIPATION
(WATTS)
10
RATED VOLTAGE APPLIED
8
R
θJC
= 12°C/W, T
J
= 125°C
5
FIG.2 - TYPICAL POWER DISSIPATION
SQUARE
WAVE
DC
T
J
= 125
°
C
4
π
5
6
3
10
2
I
PK
= 20
I
AV
4
SQUARE
WAVE
DC
2
1
0
50
60
70
80
90
100
110
120
130
0
0
1
2
3
4
5
CASE TEMPERATURE, (
°
C)
AVERAGE FORWARD CURRENT, (A)
FIG.3 - TYPICAL FORWARD VOLTAGE
100
FIG.4 - TYPICAL REVERSE LEAKAGE CURRENT
REVERSE LEAKAGE CURRENT,
(mA)
INSTANTANEOUS FORWARD
CURRENT, (A)
1
T
C
= 100
°
C
T
J
= 125
°
C
10
= 100
°
C
= 75
°
C
T
C
= 25
°
C
0.1
1
= 25
°
C
0.1
0.01
0.1
0.01
0
4
8
12
16
20
24
28
32
36
40
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
INSTANTANEOUS FORWARD VOLTAGE, (V)
REVERSE VOLTAGE, (V)
FIG. 5 TYPICAL CAPACITANCE
200
180
NOTE :TYPICAL CAPACITANCE
AT 0 V = 160 pF
CAPACITANCE , (pF)
160
140
120
100
80
60
40
20
0
0
4
8
12
16
20
24
28
32
36
40
REVERSE VOLTAGE, (V)
Page 2 of 2
Rev. 02 : March 30, 2005
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