电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

CMKDM7590BK

产品描述Transistor
产品类别分立半导体    晶体管   
文件大小712KB,共2页
制造商Central Semiconductor
下载文档 详细参数 选型对比 全文预览

CMKDM7590BK概述

Transistor

CMKDM7590BK规格参数

参数名称属性值
是否Rohs认证不符合
Reach Compliance Codenot_compliant
Is SamacsysN
最大漏极电流 (Abs) (ID)0.14 A
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-609代码e0
工作模式ENHANCEMENT MODE
最高工作温度150 °C
极性/信道类型P-CHANNEL
最大功率耗散 (Abs)0.35 W
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
Base Number Matches1

文档预览

下载PDF文档
CMKDM3590 N-CH/N-CH
CMKDM7590 P-CH/P-CH
CMKDM3575 N-CH/P-CH
SURFACE MOUNT
N-CHANNEL AND P-CHANNEL
DUAL ENHANCEMENT-MODE
COMPLEMENTARY MOSFETS
Central
TM
Semiconductor Corp.
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices are
combinations of dual N-Channel and P-Channel
Enhancement-mode silicon MOSFETs designed for high
speed pulsed amplifier and driver applications. These
devices offer desirable MOSFET electrical characteristics
in an economical, industry standard SOT-363 package.
MARKING CODES: CMKDM3590: 3C5
CMKDM7590: 7C5
CMKDM3575: 37C
SOT-363 CASE
• Devices are
Halogen Free
by design
APPLICATIONS:
• Load/Power Switches
• Power Supply Converter Circuits
• Battery Powered Portable Devices
MAXIMUM RATINGS:
(TA=25°C)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Steady State)
Continuous Drain Current (tp < 5s)
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=5.0V, VDS=0V
IDSS
IDSS
BVDSS
VGS(th)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
ton
toff
VDS=5.0V, VGS=0V
VDS=16V, VGS=0V
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
VGS=4.5V, ID=100mA
VGS=2.5V, ID=50mA
VGS=1.8V, ID=20mA
VGS=1.5V, ID=10mA
VGS=1.2V, ID=1.0mA
VDS=5.0V, ID=125mA
VDS=15V, VGS=0V, f=1.0MHz
VDS=15V, VGS=0V, f=1.0MHz
VDS=15V, VGS=0V, f=1.0MHz
VDD=10V, VGS=4.5V, ID=200mA
VDD=10V, VGS=4.5V, ID=200mA
FEATURES:
• ESD Protection up to 2kV
• Power Dissipation: 350mW
• Low Threshold Voltage
• Logic Level Compatibility
• Small SOT-363 Surface Mount Package
SYMBOL
VDS
VGS
ID
ID
PD
TJ, Tstg
Θ
JA
CMKDM3590
MIN TYP MAX
-
-
100
-
-
20
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.5
2.0
3.0
4.0
7.0
1.3
2.2
9.0
3.0
40
150
50
100
-
1.0
3.0
4.0
6.0
10
-
-
-
-
-
-
-
CMKDM3590
20
8.0
160
200
350
-65 to +150
357
CMKDM7590
MIN TYP MAX
-
-
100
-
-
20
0.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4.0
5.5
8.0
11
20
1.3
1.0
12
2.7
60
210
50
100
-
1.0
5.0
7.0
10
17
-
-
-
-
-
-
-
140
180
CMKDM7590
UNITS
V
V
mA
mA
mW
°C
°C/W
UNITS
nA
nA
nA
V
V
Ω
Ω
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
R0 (26-May 2009)

CMKDM7590BK相似产品对比

CMKDM7590BK CMKDM3575 CMKDM3575TR CMKDM7590 CMKDM7590TRLEADFREE CMKDM7590TR CMKDM3590 CMKDM3590TRLEADFREE CMKDM3590TR CMKDM3575BK
描述 Transistor Small Signal Field-Effect Transistor, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ULTRAMINI-6 Transistor Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ULTRAMINI-6 Transistor Transistor Small Signal Field-Effect Transistor, 0.16A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ULTRAMINI-6 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Transistor
Reach Compliance Code not_compliant compliant not_compliant compliant compliant not_compliant compliant compliant not_compliant not_compliant
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
极性/信道类型 P-CHANNEL N-CHANNEL AND P-CHANNEL N-CHANNEL AND P-CHANNEL P-CHANNEL P-CHANNEL P-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL AND P-CHANNEL
表面贴装 YES YES YES YES YES YES YES YES YES YES
是否Rohs认证 不符合 - 不符合 - 符合 不符合 - 符合 不符合 不符合
JESD-609代码 e0 - e0 - e3 e0 - e3 e0 e0
最高工作温度 150 °C - 150 °C - 150 °C 150 °C - 150 °C 150 °C 150 °C
端子面层 Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) - Matte Tin (Sn) Tin/Lead (Sn/Pb) - Matte Tin (Sn) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1 1 1 1 1 1 1 1 -

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 24  2131  2332  1182  1374  52  55  59  21  25 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved