OM60L60HB OM45L120HB
Preliminary Data Sheet
OM50F60HB OM35F120HB
HALF-BRIDGE IGBTS IN HERMETIC ISOLATED
POWER BLOCK PACKAGES
High Current, High Voltage 600V And 1200V,
Up To 75 Amp IGBTs With FRED Diodes,
Half-Bridge Configuration
FEATURES
•
•
•
•
•
•
•
Includes Internal FRED Diode
Rugged Package Design
Solder Terminals
Very Low Saturation Voltage
Fast Switching, Low Drive Current
Available Screened To MIL-S-19500, TX, TXV And S Levels
Ceramic Feedthroughs
DESCRIPTION
This series of hermetically packaged products feature the latest advanced IGBT
technology combined with a package designed specifically for high efficiency, high
current applications. They are ideally suited for Hi-Rel requirements where small
size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
GENERAL CHARACTERISTICS
Part
Number
OM60L60HB
OM45L120HB
OM50F60HB
OM35F120HB
V
CE
(V)
600
1200
600
1200
I
C
(A)
75
70
75
70
@ 25°C (Per Switch)
Type
Lo Sat.
Lo Sat.
Hi Speed
Hi Speed
V
CE(sat)
1.8 Volts
3 Volts
2.7 Volts
4 Volts
3.1
SCHEMATIC
C1
4 11 R0
G1
C2
C2
E1
G2
E2
3.1 - 55
OM60L60HB OM45L120HB OM50F60HB OM35F120HB
ELECTRICAL CHARACTERISTICS: OM60L60HB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 250 µA, V
CE
= 0
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
C
= 125°C
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
V
(BR)CES
I
CES
600
-
-
-
-
-
-
-
-
0.25
1.0
±100
V
mA
mA
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 250 µA
Collector Emitter saturation Voltage, V
GE
= 15 V, I
C
= 60 A
V
GE(th)
V
CE(sat)
2.5
-
-
-
5.0
1.8
V
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 10 V, I
C
= 60 A
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
30
-
-
-
-
4000
340
100
-
-
-
-
S
pF
pF
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 480 V, I
C
= 60 A,
R
GS
= 2.7 , V
GS
= 15 V,
L = 100 µH
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
50
200
600
500
-
-
-
-
nS
nS
nS
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Fall Time
Turn-Off Losses
V
CE(clamp)
= 480 V, I
C
= 60 A
V
GE
= 15 V, R
g
= 2.7
L = 100 µH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
-
-
1000
1000
26
-
-
-
nS
nS
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 60 A, T
j
= 25°C
I
F
= 60 A, T
j
= 150°C
Maximum Reverse Current
V
R
= 600 V, T
j
= 25°C
V
R
= 480 V, T
j
= 125°C
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
V
R
= 30 V, T
j
= 25°C
V
f
I
r
t
rr
-
-
-
-
-
-
-
-
-
-
1.85
1.50
200
14
50
µA
mA
nS
V
ELECTRICAL CHARACTERISTICS: OM45L120HB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 3 mA, V
CE
= 0
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
V
(BR)CES
I
CES
1200
-
-
-
-
-
-
-
-
3.0
1.2
±100
V
mA
mA
nA
3.1
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 4 mA
Collector Emitter saturation Voltage, V
GE
= 15 V, I
C
= 45 A
V
GE(th)
V
CE(sat)
4.0
-
-
-
8.0
3.0
V
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 10 V, I
C
= 45 A
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
26
-
-
-
-
4200
290
65
-
-
-
-
S
pF
pF
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 960 V, I
C
= 45 A,
R
GS
= 2.7 , V
GS
= 15 V,
L = 100 µH
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
80
250
450
1200
-
-
-
-
nS
nS
nS
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Fall Time
Turn-Off Losses
V
CE(clamp)
= 960 V, I
C
= 45 A
V
GE
= 15 V, R
g
= 2.7
L = 100 µH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
-
-
450
1200
27
-
-
-
nS
nS
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 52 A, T
j
= 25°C
I
F
= 52 A, T
j
= 150°C
Maximum Reverse Current
V
R
= 1200 V, T
j
= 25°C
V
R
= 960 V, T
j
= 125°C
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
V
R
= 30 V, T
j
= 25°C
V
f
I
r
t
rr
-
-
-
-
-
-
-
-
-
-
2.55
2.15
2.2
14
60
mA
mA
nS
V
3.1 - 56
OM60L60HB OM45L120HB OM50F60HB OM35F120HB
ELECTRICAL CHARACTERISTICS: OM50F60HB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 250 µA, V
CE
= 0
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
V
(BR)CES
I
CES
600
-
-
-
-
-
-
-
-
0.25
1.0
±100
V
mA
mA
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 250 µA
Collector Emitter saturation Voltage, V
GE
= 15 V, I
C
= 50 A
V
GE(th)
V
CE(sat)
2.5
-
-
-
5.0
2.7
V
V
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 10 V, I
C
= 50 A
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
25
-
-
-
-
4000
340
100
-
-
-
-
S
pF
pF
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 480 V, I
C
= 50 A,
R
GS
= 2.7 , V
GS
= 15 V, L = 100 µH
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
50
200
200
300
-
-
-
-
nS
nS
nS
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Fall Time
Turn-Off Losses
V
CE(clamp)
= 480 V, I
C
= 50 A
V
GE
= 15 V, R
g
= 2.7
L = 100 µH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
-
-
300
600
9.6
-
-
-
nS
nS
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 60 A, T
j
= 25°C
I
F
= 60 A, T
j
= 150°C
Maximum Reverse Current
V
R
= 600 V, T
j
= 25°C
V
R
= 480 V, T
j
= 125°C
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
V
R
= 30 V, T
j
= 25°C
V
f
I
r
t
rr
-
-
-
-
-
-
-
-
-
-
1.85
1.50
200
14
50
µA
mA
nS
V
ELECTRICAL CHARACTERISTICS: OM35L120HB
(T
C
= 25°C unless otherwise specified)
Characteristic
Symbol
Min.
Typ.
Max.
Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage, I
C
= 3 mA, V
CE
= 0
Zero Gate Voltage Drain Current , V
GE
= 0, V
CE
= Max. Rat.
V
CE
= 0.8 Max. Rat., V
GE
= 0, T
j
= 125°C
Gate Emitter Leakage Current, V
GE
= ±20 V, V
CE
= 0 V
I
GES
V
(BR)CES
I
CES
1200
-
-
-
-
-
-
-
-
3.0
1.2
±200
V
mA
mA
nA
ON CHARACTERISTICS
Gate-Threshold Voltage, V
CE
= V
GE
, I
C
= 4 mA
Collector Emitter saturation Voltage, V
GE
= 15 V, I
C
= 35 A
V
GE(th)
V
CE(sat)
4.0
-
-
-
8.0
4.0
V
V
3.1
DYNAMIC CHARACTERISTICS
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
CE
= 10 V, I
C
= 35 A
V
GE
= 0,
V
CE
= 25 V,
f = 1.0 mHz
g
fs
C
iss
C
oss
C
rss
26
-
-
-
-
3800
235
60
-
-
-
-
S
pF
pF
pF
SWITCHING-INDUCTIVE RESISTIVE CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
CC
= 960 V, I
C
= 35 A,
R
GS
= 2.7 , V
GS
= 15 V,
L = 100 µH
t
d(on)
t
r
t
d(off)
t
f
-
-
-
-
80
150
400
700
-
-
-
-
nS
nS
nS
nS
SWITCHING-INDUCTIVE LOAD CHARACTERISTICS
Turn-On Delay Time
Fall Time
Turn-Off Losses
V
CE(clamp)
= 960 V, I
C
= 35 A
V
GE
= 15 V, R
g
= 2.7
L = 100 µH, T
j
= 125°C
t
d(on)
t
f
E
(OFF)
-
-
-
400
1100
54
-
-
-
nS
nS
m Ws
SOURCE DRAIN DIODE CHARACTERISTICS
Maximum Forward Voltage
I
F
= 52 A, T
j
= 25°C
I
F
= 52 A, T
j
= 150°C
Maximum Reverse Current
V
R
= 1200 V, T
j
= 25°C
V
R
= 960 V, T
j
= 125°C
Reverse Recovery Time
I
F
= 1 A, di/dt = 200 A µ/S
V
R
= 30 V, T
j
= 25°C
V
f
I
r
t
rr
-
-
-
-
-
-
-
-
-
-
2.55
2.15
2.2
14
60
mA
mA
nS
V
3.1 - 57
OM60L60HB OM45L120HB OM50F60HB OM35F120HB
ABSOLUTE MAXIMUM RATINGS
IGBT
Parameters
V
CE
V
CER
I
C
@ T
C
= 25°C
I
C
@ T
J
= 90°C
I
C
Pulsed
Junction-To-Case
Junction-To-Ambient
R
thJC
R
thJA
Drain Source Voltage
Drain Gate Voltage (R
ge
= 20 K )
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor
Junction-To-Case
Junction-To-Ambient
(T
C
= 25°C unless otherwise noted)
60L60HB
600
600
75
60
200
2
.03
0.5
30
45L120HB
1200
1200
70
45
180
2
.03
0.5
30
50F60HB
600
600
75
50
200
2
.03
0.5
30
35F120HB
1200
1200
70
35
140
2
.03
0.5
30
Units
V
V
A
A
A
W/°C
W/°C
°C/W
°C/W
Rectifier
PIV
I
O
t
rr
600
60
35
1200
52
40
600
60
35
1200
52
40
V
A
nSec
MECHANICAL OUTLINE
2.000
1.500
.250
2 PLCS.
. 25 DIA.
1
5 PLCS.
.515
MAX.
.050
3.1
1.250
.625
.125
.472
1.500
±010
.510
.324
.375
.875
1.375
1.750
.100 DIA.
6 PLCS.
.225
.166 DIA.
6 PLCS.
.030
.275
.375
±010
±010
TERMINAL 1
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