Surface Mount SP3T Switches
MSW3103-310 & MSW3104-310
Series Datasheet
Features
•
•
•
•
•
•
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Wide frequency range: 50 MHz to 3 GHz, in 2 bands
Surface mount SP3T switch in compact outline: 8 mm L x 8 mm W x 2.5 mm H
Higher average power handling than plastic packaged MMIC switches: 100 W CW
High RF peak power: 200 W
Low Insertion loss: 0.5 dB
High IIP3: 65 dBm
Operates from positive voltage: +5 V & -28 V to -125 V
RoHS compliant
Applications
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High Power Transmit/Receive (TR) symmetrical switching
Active Receiver Protection
Description
The MSW3103-310 and MSW3104-310 series of surface mount silicon PIN diode SP3T switches can be used
for high power transmit/receive (TR) symmetrical switching or active receiver protection from 50 MHz to 1
GHz (MSW3103-310) or from 400 MHz to 3 GHz (MSW3104-310). These switches are manufactured using
Aeroflex/Metelics proven hybrid manufacturing process incorporating high voltage PIN diodes and passive
devices integrated on a ceramic substrate. These low profiles, compact, surface mount components (8 mm
L x 8 mm W x 2.5 mm H) offer superior small and large signal performance compared to that of MMIC devices
in QFN packages. The SP3T switches are designed in a symmetrical topology to enable switched RF port to
be used as the high-input-power-handling port, to minimize insertion loss and to maximize isolation
performance. The very low thermal resistance (< 25 ºC/W) of the NIP diodes in these devices enables them
to reliably handle RF incident power levels of 50 dBm CW and RF peak incident power levels of 53 dBm in
cold switching applications. The thick I layers of the NIP diodes (> 40 µm), coupled with their long minority
carrier lifetime (> 0.3 µs), produces input third order intercept point (IIP3) greater than 65 dBm.
Applications
These MSW3103-310, MSW3104-310 SP3T switches are designed to be used in high average and peak
power switch applications, operating from 50 MHz to 3 GHz in two bands, which utilize high volume, surface
mount, solder re-flow manufacturing. These products are durable and capable of reliably operating in
military, commercial, and industrial environments. The devices are RoHS compliant.
1
Document No. DS 13442 Rev.A, ECN 12739
Revision Date: 4/1/2013
Surface Mount SP3T Switch
Environmental Capabilities
The MSW3103-310 and MSW3104-310 SP3T switches are capable of meeting the environmental
requirements of MIL-STD-202 and MIL-STD-750.
ESD and Moisture Sensitivity Level Rating
PIN Diode Switches are susceptible to ESD conditions as with all semiconductors. The ESD rating for this
device is Class 1C, HBM. The moisture sensitivity level rating for this device is MSL 1.
Pin Out
Schematic
Truth Table for Control of Symmetrical SP3T Switch
MSW3103-310, MSW3104-310
+V
CC1
= 5 V and +V
CC2
= 28 V (Unless otherwise noted)
Path
J0 – J1
Low Loss
(Bias State 1)
High
Isolation
High
Isolation
Path
J0 – J2
High
Isolation
Low Loss
(Bias State 2)
High
Isolation
Path
J0 – J3
High
Isolation
High
Isolation
Low Loss
(Bias State 3)
J1 Bias
V1A
5V
100 mA
-28 V
-4 mA
-28 V
-4 mA
J2 Bias
V2A
-28 V
-4 mA
5V
100 mA
-28 V
-4 mA
J3 Bias
V3A
-28 V
-4 mA
-28 V
-4 mA
5V
100 mA
B1 Bias
V1B
-28V
0 mA
0V
-25 mA
0V
-25 mA
B2 Bias
V2B
5V
4 mA
-28 V
0 mA
0V
-25 mA
B3 Bias
V3B
5V
4 mA
0V
-25 mA
-28 V
0 mA
J0 Bias
V3B
0V
-100 mA
0V
-100 mA
0V
-100 mA
2
603-641-3800 • 888-641-SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
Document No. DS 13442 Rev.A, ECN 12739
Revision Date: 4/1/2013
Surface Mount SP3T Switch
MSW3103-310 Electrical Specifications
Parameter
Frequency
Insertion Loss
Symbol
F
IL
Z
0
= 50
Ω
, P
IN
= 0 dBm, T
A
= 25ºC (Unless Otherwise Defined)
Test Conditions
Min.
Value
50
Typ.
Value
Max.
Value
1000
0.6
Units
MHz
dB
Return Loss
RL
Isolation
CW Incident Power (Note 2)
Peak Incident Power (Note 2)
Switching Time (Note 1)
Input 3rd Order Intercept Point
Isol
P
inc
(CW)
P
inc
(Pk)
t
SW
IIP3
Bias state 1: port J0 to J1
Bias state 2: port J0 to J2
Bias state 3: port J0 to J3
Bias state 1: port J0 to J1
Bias state 2: port J0 to J2
Bias state 3: port J0 to J3
Bias state 1: port J0 to J1
Bias state 2: port J0 to J2
Bias state 3: port J0 to J3
source & load VSWR = 1.5:1
source & load VSWR = 1.5:1,
pulse width = 10 µs, duty cycle = 1 %
10% -90% RF voltage,
TTL rep rate = 100 kHz
F
1
= 500 MHz, F
2
= 510 MHz, P
1
= P
2
= 10 dBm,
measured on path biased to low loss state
0.4
18
20
dB
34
36
50
53
2
3
dB
dBm
dBm
µs
dBm
60
64
MSW3104-310 Electrical Specifications
Parameter
Frequency
Insertion Loss
Symbol
F
IL
Z
0
= 50
Ω
, P
IN
= 0 dBm, T
A
= 25ºC (Unless Otherwise Defined)
Test Conditions
Min.
Value
400
Typ.
Value
Max.
Value
3000
0.8
Units
MHz
dB
Return Loss
RL
Isolation
CW Incident Power (Note 2)
Peak Incident Power (Note 2)
Switching Time (Note 1)
Input 3rd Order Intercept Point
Notes:
1
Isol
P
inc
(CW)
P
inc
(Pk)
t
SW
IIP3
Bias state 1: port J0 to J1
Bias state 2: port J0 to J2
Bias state 3: port J0 to J3
Bias state 1: port J0 to J1
Bias state 2: port J0 to J2
Bias state 3: port J0 to J3
Bias state 1: port J0 to J2, J0 to J3
Bias state 2: port J0 to J1, J0 to J3
Bias state 3: port J0 to J1, J0 to J2
source & load VSWR = 1.5:1
source & load VSWR = 1.5:1,
pulse width = 10 µs, duty cycle = 1 %
10% -90% RF voltage,
TTL rep rate = 100 kHz
F
1
= 2.00 GHz, F
2
= 2.01 GHz, P
1
= P
2
= 10 dBm,
measured on path biased to low loss state
0.6
14
15
dB
32
34
50
53
1.5
2
dB
dBm
dBm
µs
dBm
60
64
Switching Speed ( 50 % TTL – 10/90 % RF Voltage ) is a function of the PIN diode driver performance as well as the characteristics of the
diode. An RC “current spiking network” can be used to provide a transient current to rapidly remove stored charge from the PIN diode.
PIN diode DC reverse voltage to maintain high resistance in the OFF PIN diode is determined by RF frequency, incident power, and VSWR as
well as by the characteristics of the diode. The minimum reverse bias voltage values are provided in this datasheet.
2
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Document No. DS 13442 Rev.A, ECN 12739
Revision Date: 4/1/2013
3
Surface Mount SP3T Switch
RF Bias Network Component Values
P/N
MSW3103-310
MSW3104-310
F ( MHz )
50 – 1,000
400 – 3,000
DC Blocking
Inductors
Capacitors
0.1 µF
27 pF
4.7 µH
82 nH
RF Bypass
Capacitors
0.1 µF
270 pF
Secondary Bypass Current Limiting
Capacitors
Resistor R1
0.1 µF
270 pF
39
Ω
39
Ω
Current Limiting
Resistors R2, R3, R4
Selection base on the reverse
bias voltage
Selection base on the reverse
bias voltage
Minimum Reverse Bias Voltage at J1, J2, J3, B1, B2 and B3 Ports vs.
Signal Frequency
P
INC
= 100 W CW, Z
0
= 50
Ω
with 1.5:1 VSWR
Part Number
MSW3103-310
MSW3104-310
F = 20 MHz
-125 V
NA
F = 100 MHz
-125 V
NA
F = 200 MHz
-125 V
NA
F = 400 MHz
100 V
-85 V
F = 1 GHz
-85 V
-65 V
F = 3 GHz
NA
-28 V
Note: “NA” denotes the switch is not recommended for use in that frequency band.
Absolute Maximum Ratings
Parameter
Forward Current - J1, J2, J3 Port
Forward Current - B1, B2, B3 Port
Reverse Voltage - J1, J2, J3 Port
Reverse Voltage - B1, B2, B3 Port
Forward Diode Voltage
Operating Temperature
Storage Temperature
Junction Temperature
Assembly Temperature
CW Incident Power Handling –
J0 or J1, J2, J3 Port (Note 1)
Peak Incident Power Handling –
J0 or J1, J2, J3 Port (Note 1)
Total Dissipated RF & DC Power (Note 1)
Notes:
1
Z
0
= 50
Ω
, T
A
= +25ºC (Unless Otherwise Defined)
Conditions
Absolute Maximum Value
250 mA
150 mA
125 V
125 V
I
F
= 250 mA
1.2 V
-65ºC to 125ºC
-65ºC to 150ºC
175ºC
260ºC for 10 s
Source & load VSWR = 1.5 :1,
T
CASE
= 85 ºC, cold switching
Source & load VSWR = 1.5 :1, T
CASE
= 85ºC, cold switching,
pulse width = 10 µs, duty cycle = 1 %
T
CASE
= 85ºC, cold switching
50 dBm
53 dBm
8.5 W
Backside RF and DC grounding area of device must be completely solder-attached to RF circuit board vias for proper electrical
and thermal circuit grounding.
4
603-641-3800 • 888-641-SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
Document No. DS 13442 Rev.A, ECN 12739
Revision Date: 4/1/2013
Surface Mount SP3T Switch
MSW310X-310 SP3T Switch Module Evaluation Board Schematic
Symmetrical SP3T switch Operation
The MSW310x-310 series shunt three throw switch can
be fully controlled using external power sources. Each
power source is connected to bias the series diode and
the shunt diode of the switch arms. A typical symmetric
switch with a power source interface is shown below. The
switch is controlled to operate in one of three oper-ational
states, which are called State 1, State 2 and State 3. In the
descriptions of States 1, 2 and 3 (below), it is assumed
that +VCC1 = 5 V and VCC2 = -28 V.
State 1
In State 1, the path from port J0 to J1 is in its low inser-
tion loss condition. The paths from port J0 to port J2, and
port J0 to port J3, are in their high isolation states. In
state 1 the series PIN diode between the J0 and J1 is
forward biased by applying +5 V to the J1 bias input port
J0 port is held at 0 V/ Ground thru a 39
Ω
resistor R1. Port
B1 is connected to with –28 V bias to reverse bias the
shunt diode between the J1 and B1 ports. The magni-
tude of the resultant bias current through the forward-
biased diode is primarily determined by the voltage ap-
plied to the J1 bias port (5 V nominal), the magnitude of
the forward voltage across the PIN diode and the resis-
tance of R1 at J0 port. This current is nominally 100 mA.
At the same time, the shunt PIN diodes connected be-
tween port J2 and B2 and between port J3 and B3 are
also forward biased by applying a +5 V bias voltage at
port B2 and B3, The magnitudes of the bias currents
through these diodes are primarily determined by the
voltage applied (-28 V) to the J2 and J3 bias ports, the
magnitudes of the forward voltage across each of the PIN
diodes and the current limiting resistances R3 and R4 -
5
603-641-3800 • 888-641-SEMI (7364) • metelics-sales@aeroflex.com • www.aeroflex.com/metelics
Document No. DS 13442 Rev.A, ECN 12739
Revision Date: 4/1/2013
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