Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-0670
Features
• Cascadable 50
Ω
Gain Block
• Low Operating Voltage:
3.5 V Typical V
d
• 3 dB Bandwidth:
DC to 1.0 GHz
• High Gain:
19.5 dB Typical at 0.5 GHz
• Low Noise Figure:
2.8 dB Typical at 0.5 GHz
• Hermetic Gold-ceramic
Microstrip Package
high reliability package. This
MMIC is designed for use as a
general purpose 50
Ω
gain block.
Typical applications include
narrow and broad band IF and RF
amplifiers in industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz f
T
, 25 GHz f
MAX
,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
70 mil Package
Description
The MSA-0670 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic,
Typical Biasing Configuration
R
bias
V
CC
> 5 V
RFC (Optional)
4
C
block
3
IN
1
MSA
C
block
OUT
V
d
= 3.5 V
2
5965-9586E
6-374
MSA-0670 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[2,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
50 mA
200 mW
+13 dBm
200°C
–65 to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 130°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 7.7 mW/°C for T
C
> 174°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of
θ
jc
than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Parameters and Test Conditions: I
d
= 16 mA, Z
O
= 50
Ω
Power Gain (|S
21
|
2
)
Gain Flatness
3 dB Bandwidth
Input VSWR
Output VSWR
50
Ω
Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.1 GHz
f = 0.1 to 0.6 GHz
Units
dB
dB
GHz
Min.
19.0
Typ.
20.5
±
0.7
1.0
1.9:1
1.8:1
Max.
22.0
±
1.0
dB
dBm
dBm
psec
V
mV/°C
3.1
2.8
2.0
14.5
200
3.5
–8.0
4.0
3.9
Note:
1. The recommended operating current range for this device is 12 to 30 mA. Typical performance as a function of current
is on the following page.
6-375
MSA-0670 Typical Scattering Parameters (Z
O
= 50
Ω,
T
A
= 25°C, I
d
= 16 mA)
Freq.
GHz
S
11
Mag
Ang
dB
S
21
Mag
Ang
dB
S
12
Mag
Ang
Mag
S
22
Ang
k
0.1
0.2
0.3
0.4
0.5
0.6
0.8
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Note:
.05
.07
.09
.11
.13
.15
.19
.24
.31
.38
.42
.46
.48
.48
.48
.48
–147
–134
–126
–123
–123
–123
–126
–129
–141
–157
–167
178
173
164
155
143
20.5
20.4
20.1
19.9
19.6
19.2
17.4
16.5
15.2
13.0
11.1
9.5
7.9
6.6
5.5
4.5
10.62
10.41
10.16
9.85
9.50
9.09
8.28
7.46
5.76
4.47
3.59
2.97
2.49
2.13
1.87
1.67
172
164
156
148
141
135
122
110
87
68
57
45
33
22
13
3
–23.3
–23.0
–22.6
–22.4
–22.0
–21.3
–20.7
–19.8
–18.2
–17.2
–16.7
–16.4
–16.2
–16.1
–15.9
–15.8
.068
.070
.074
.076
.079
.082
.093
.103
.124
.138
.146
.152
.155
.156
.161
.163
4
8
12
14
26
18
22
22
23
19
20
16
11
9
5
3
.05
.09
.13
.16
.20
.22
.25
.27
.27
.24
.21
.17
.14
.11
.11
.14
–69
–92
–104
–113
–121
–128
–141
–154
–176
166
158
156
163
–175
–154
–141
1.05
1.04
1.02
1.00
0.99
0.97
0.94
0.92
0.91
0.94
1.01
1.07
1.15
1.27
1.35
1.46
1. A model for this device is available in the DEVICE MODELS section.
Typical Performance, T
A
= 25°C
(unless otherwise noted)
21
Gain Flat to DC
18
15
G
p
(dB)
I
d
(mA)
G
p
(dB)
25
T
C
= +125°C
T
C
= +25°C
20 T
C
= –55°C
25
0.1 GHz
0.5 GHz
20
1.0 GHz
15
2.0 GHz
10
12
9
6
3
0
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
15
10
5
0
0
1
2
3
V
d
(V)
4
5
5
0
10
15
20
25
30
I
d
(mA)
Figure 1. Typical Power Gain vs.
Frequency, T
A
= 25°C, I
d
= 16 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Power Gain vs. Current.
21
Gp (dB)
12
I
d
= 30 mA
8
P
1 dB
(dBm)
4.0
20
19
18
17
5
5
NF
P
1 dB
4
NF (dB)
3.5
NF (dB)
G
P
4
I
d
= 20 mA
3.0
P
1 dB
(dBm)
4
3
2
1
0
–55 –25
+25
+85
3
2
1
0
I
d
= 16 mA
0
I
d
= 12 mA
-4
0.1
2.5
I
d
= 12 mA
I
d
= 16 mA, 30 mA
I
d
= 20 mA
0.1
0.2 0.3
0.5
1.0
2.0
4.0
2.0
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
+125
TEMPERATURE (°C)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain
Compression, NF and Power Gain vs.
Case Temperature, f = 0.5 GHz,
I
d
=16mA.
Figure 5. Output Power at 1 dB Gain
Compression vs. Frequency.
Figure 6. Noise Figure vs. Frequency.
6-376
70 mil Package Dimensions
.040
1.02
4
GROUND
.020
.508
RF INPUT
1
RF OUTPUT
AND BIAS
3
2
GROUND
.004
±
.002
.10
±
.05
.070
1.70
Notes:
(unless otherwise specified)
1. Dimensions are in
mm
2. Tolerances
in .xxx =
±
0.005
mm .xx =
±
0.13
.495
±
.030
12.57
±
.76
.035
.89
6-377
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