MD2103DFH
High voltage NPN power transistor for standard
definition CRT display
General features
■
■
■
■
■
■
■
State-of-the-art technology:
– Diffused collector “enhanced generation”
More stable performance versus operating
temperature variation
Low base drive requirement
Tighter h
FE
range at operating collector current
Fully insulated power package U.L. compliant
Integrated free wheeling diode
In compliance with the 2002/93/EC European
Directive
TO-220FH
1
2
3
Description
The MD2103DFH is manufactured using Diffused
Collector in Planar technology adopting new and
enhanced high voltage structure.
The new MD product series show improved
silicon efficiency briging updated performance to
the horizontal deflection stage.
Internal schematic diagram
Applications
■
R
BE
=65Ω (typ)
Horizontal deflection output for TV
Order codes
Part number
MD2103DFH
Marking
MD2103DFH
Package
TO-220FH
Packing
Tube
July 2006
Rev 1
1/11
www.st.com
11
MD2103DFH
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
MD2103DFH
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
V
INS
T
stg
T
J
Absolute maximum rating
Parameter
Collector-emitter voltage (V
BE
=0)
Collector-emitter voltage (I
B
=0)
Emitter-base voltage (I
C
=0)
Collector current
Collector peak current (t
P
< 5ms)
Base current
Total dissipation at T
c
≤
25°C
Insulation withstand voltage (RMS) from all three leads to
external heatsink
Storage temperature
Max. operating junction temperature
Value
1500
700
7
6
9
3
38
2500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
°C
°C
Table 2.
Symbol
Thermal data
Parameter
__max
Value
3.3
Unit
°C/W
R
thj-case
Thermal resistance junction-case
3/11
Electrical characteristics
MD2103DFH
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3.
Symbol
I
CES
I
EBO
V
(BR)EBO
V
CE(sat) (1)
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
=0)
Emitter cut-off current
(I
C
=0)
Emitter-base brakdown
voltage (I
C
= 0)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
Test conditions
V
CE
= 1500V
V
CE
= 1500V
V
EB
= 5V
I
E
= 700mA
I
C
= 3A
I
C
= 3A
I
C
= 1A
_ _
I
B
=0.75A
_ _
I
B
=0.75A
V
CE
=5V
V
CE
=1V
V
CE
=5V
f
h
=16kHz
3.8
0.25
2
µs
µs
V
6.5
17
6
9.5
T
C
= 125°C
50
11
Min.
Typ.
Max.
0.2
2
125
Unit
mA
mA
mA
V
1.8
1.5
V
V
V
BE(sat) (1)
h
FE (1)
DC current gain
I
C
= 3A
I
C
= 3A
t
s
t
f
V
F
Inductive load
Storage time
Fall time
Diode forward voltage
I
C
=3A
I
B(on)
=0.5A V
BE(off)
=-2.7V
L
BB(off)
=6.3µH
(see
Figure 11)
I
F
= 3A
Note (1) Pulsed duration = 300
µs,
duty cycle
≤
1.5%
4/11
MD2103DFH
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Derating curve
Figure 3.
Output characteristics
Figure 4.
Reverse biased SOA
Figure 5.
DC current gain
Figure 6.
DC current gain
5/11
stm32/stm8
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