PDTA123Y series - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm SC-75 3-Pin
| 参数名称 | 属性值 |
| Brand Name | Nexperia |
| 零件包装代码 | SC-75 |
| 包装说明 | PLASTIC, SC-75, 3 PIN |
| 针数 | 3 |
| 制造商包装代码 | SOT416 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 其他特性 | BUILT IN BIAS RESISTOR RATIO IS 4.5 |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 35 |
| JESD-30 代码 | R-PDSO-G3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | PNP |
| 最大功率耗散 (Abs) | 0.15 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Tin (Sn) |
| 端子形式 | GULL WING |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 40 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| PDTA123YE,115 | PDTA123YU,115 | PDTA123YT,215 | PDTA123YM,315 | |
|---|---|---|---|---|
| 描述 | PDTA123Y series - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm SC-75 3-Pin | TRANS PREBIAS PNP 200MW SOT323 | PNP,Vceo=-50V,Ic=-100mA | PDTA123Y series - PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 10 kOhm DFN 3-Pin |
| Brand Name | Nexperia | Nexperia | Nexperia | Nexperia |
| 零件包装代码 | SC-75 | SC-70 | TO-236 | DFN |
| 包装说明 | PLASTIC, SC-75, 3 PIN | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | CHIP CARRIER, R-PBCC-N3 |
| 针数 | 3 | 3 | 3 | 3 |
| 制造商包装代码 | SOT416 | SOT323 | SOT23 | SOT883 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | BUILT IN BIAS RESISTOR RATIO IS 4.5 | BUILT IN BIAS RESISTOR RATIO IS 4.5 | BUILT IN BIAS RESISTOR RATIO IS 4.5 | BUILT IN BIAS RESISTOR RATIO IS 4.5 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 35 | 35 | 35 | 35 |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PBCC-N3 |
| JESD-609代码 | e3 | e3 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | CHIP CARRIER |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 |
| 极性/信道类型 | PNP | PNP | PNP | PNP |
| 表面贴装 | YES | YES | YES | YES |
| 端子面层 | Tin (Sn) | Tin (Sn) | Tin (Sn) | Tin (Sn) |
| 端子形式 | GULL WING | GULL WING | GULL WING | NO LEAD |
| 端子位置 | DUAL | DUAL | DUAL | BOTTOM |
| 处于峰值回流温度下的最长时间 | 40 | 30 | 30 | 30 |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
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