TN2460L/TN2460T
Vishay Siliconix
N-Channel 240-V (D-S) MOSFET
PRODUCT SUMMARY
Part Number
TN2460L
240
TN2460T
V
(BR)DSS
Min (V)
r
DS(on)
Max (W)
60 @ V
GS
= 10 V
60 @ V
GS
= 10 V
V
GS(th)
(V)
0.5 to 1.8
0.5 to 1.8
I
D
Min (mA)
75
51
FEATURES
D
D
D
D
D
Low On-Resistance: 40
W
Secondary Breakdown Free: 260 V
Low Power/Voltage Driven
Low Input and Output Leakage
Excellent Thermal Stability
BENEFITS
D
D
D
D
D
Low Offset Voltage
Full-Voltage Operation
Easily Driven Without Buffer
Low Error Voltage
No High-Temperature
“Run-Away”
APPLICATIONS
D
High-Voltage Drivers: Relays, Solenoids,
Lamps, Hammers, Displays,
Transistors, etc.
D
Telephone Mute Switches, Ringer Circuits
D
Power Supply, Converters
D
Motor Control
TO-226AA
(TO-92)
S
1
TO-236
(SOT-23)
Device Marking
Front View
“S” TN
2406L
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
G
1
3
S
2
D
Marking Code: T2wll
T2 = Part Number Code for TN2460T
w
= Week Code
ll
= Lot Traceability
G
2
D
3
Top View
TN2460L
Top View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
_
Pulsed Drain Current
a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
Document Number: 70205
S-04279—Rev. D , 16-Jul-01
www.vishay.com
T
A
= 25_C
T
A
= 100_C
T
A
= 25_C
T
A
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
TN2460L
240
"20
75
48
800
0.8
0.32
156
–55 to 150
TN2460T
240
"20
51
32
400
0.36
0.14
350
Unit
V
mA
W
_C/W
_C
11-1
TN2460L/TN2460T
Vishay Siliconix
SPECIFICATIONS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 10
mA
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
T
J
= 125_C
V
DS
= 120 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
T
J
= 125_C
V
DS
= 10 V, V
GS
=10 V
I
D(on)
V
DS
= 10 V, V
GS
= 4.5 V
V
GS
= 10 V, I
D
= 0.05 A
Drain-Source On-Resistance
b
r
DS(on)
V
GS
= 4.5 V, I
D
= 0.02 A
T
J
= 125_C
Forward Transconductance
b
g
fs
V
DS
= 10 V, I
D
= 0.05 A
30
75
20
140
130
38
40
75
70
60
60
120
mS
W
mA
"5
0.1
5
mA
m
240
0.5
260
1.65
1.8
"10
nA
V
Symbol
Test Conditions
Min
Typ
a
Max
Unit
On-State Drain Current
b
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
14
4
1
30
15
10
pF
Switching
c
Turn-On Time
Turn-Off Time
t
ON
t
OFF
V
DD
= 25 V, R
L
= 500
W
I
D
^
0.05 A, V
GEN
= 10 V, R
G
= 25
W
8
20
20
ns
35
VNDN24
Notes
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW
v80
ms
duty cycle
v1%.
c. Switching time is essentially independent of operating temperature.
www.vishay.com
11-2
Document Number: 70205
S-04279—Rev. D , 16-Jul-01
TN2460L/TN2460T
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
200
V
GS
= 10 V
160
I
D
– Drain Current (mA)
4V
I
D
– Drain Current (mA)
80
125_C
60
100
T
J
= –55_C
25_C
Transfer Characteristics
120
80
3V
40
2V
0
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
40
20
V
DS
= 15 V
0
0
1
2
3
4
5
V
GS
– Gate-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
100
90
r
DS(on)
– On-Resistance (
Ω )
80
70
I
D
= 100 mA
60
50
50 mA
40
10 mA
30
0
4
8
12
16
20
V
GS
– Gate-Source Voltage (V)
0
0
r
DS(on)
– On-Resistance (
Ω )
100
125
On-Resistance vs. Drain Current
V
GS
= 10 V
75
50
25
50
100
150
200
250
I
D
– Drain Current (A)
Normalized On-Resistance
vs. Junction Temperature
2.25
r
DS(on)
– Drain-Source On-Resistance (
Ω )
(Normalized)
2.00
1.75
1.50
1.25
1.00
0.75
0.50
–50
–10
30
70
110
150
T
J
– Junction Temperature (_C)
Document Number: 70205
S-04279—Rev. D , 16-Jul-01
0.01
0.75
V
GS
= 4.5 V
I
D
= 50 mA
I
D
– Drain Current (mA)
10
V
DS
= 5 V
Threshold Region
T
J
= 150_C
1
75_C
25__C
0.1
–55_C
1
1.25
1.5
1.75
2
2.25
2.5
V
GS
– Gate-Source Voltage (V)
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11-3
TN2460L/TN2460T
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Capacitance
20
V
GS
= 0 V
f = 1 MHz
C
iss
12
V
GS
– Gate-to-Source Voltage (V)
16
C – Capacitance (pF)
12.5
15.0
I
D
= 30 mA
Gate Charge
10.0
7.5
V
DS
= 100 V
5.0
192 V
2.5
8
C
oss
4
C
rss
0
0
10
20
30
40
50
V
DS
– Drain-to-Source Voltage (V)
0
0
50
100
150
200
250
300
Q
g
– Total Gate Charge (pC)
Load Condition Effects on Switching
100
50
t – Switching Time (ns)
V
DD
= 25 V
R
G
= 25
W
V
GS
= 0 to 10 V
t – Switching Time (ns)
50
Drive Resistance Effects on Switching
V
DD
= 25 V
R
L
= 500
W
V
GS
= 0 to 10 V
I
D
= 50 mA
t
f
10
t
d(off)
t
r
t
d(on)
20
10
5
t
d(off)
t
f
t
r
t
d(on)
2
2
1
10
20
50
100
I
D
– Drain Current (A)
1
10
20
R
G
– Gate Resistor (W)
50
Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA)
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
Notes:
P
DM
0.01
Single Pulse
0.01
0.1
2. Per Unit Base = R
thJA
= 156_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
1
10
100
1K
10 K
t
1
– Square Wave Pulse Duration (sec)
www.vishay.com
11-4
Document Number: 70205
S-04279—Rev. D , 16-Jul-01
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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