Si5915DC
New Product
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.070 @ V
GS
= –4.5 V
–8
0.108 @ V
GS
= –2.5 V
0.162 @ V
GS
= –1.8 V
FEATURES
I
D
(A)
–4.6
–3.7
–3.0
D
TrenchFETr Power MOSFET
D
Low Thermal Resistance
D
40% Smaller Footprint Than TSOP-6
APPLICATIONS
D
Load Switch or PA Switch for Portable
Devices
S
1
S
2
1206-8 ChipFET
1
S
1
D
1
D
1
D
2
D
2
G
1
S
2
G
2
G
1
G
2
Marking Code
DE XX
Lot Traceability
and Date Code
Part # Code
D
1
P-Channel MOSFET
D
2
P-Channel MOSFET
Bottom View
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 85_C
P
D
T
J
, T
stg
T
A
= 25_C
I
D
T
A
= 85_C
I
DM
I
S
–1.8
2.1
1.1
–55 to 150
–3.3
–10
–0.9
1.1
0.6
W
_C
–2.5
A
Symbol
V
DS
V
GS
5 secs
–8
Steady State
Unit
V
"8
–4.6
–3.4
THERMAL RESISTANCE RATINGS
Parameter
t
v
5 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70693
S-04563—Rev. A, 27-Aug-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
Symbol
Typical
50
90
30
Maximum
60
110
40
Unit
_C/W
C/W
1
Si5915DC
Vishay Siliconix
New Product
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –6.4 V, V
GS
= 0 V
V
DS
= –6.4 V, V
GS
= 0 V, T
J
= 85_C
V
DS
p
–5 V, V
GS
= –4.5 V
V
GS
= –4.5 V, I
D
= –3.4 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –2.5 V, I
D
= –2.7 A
V
GS
= –1.8 V, I
D
= –1 A
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= –5 V, I
D
= –3.4 A
I
S
= –0.9 A, V
GS
= 0 V
–10
0.058
0.090
0.131
8
–0.8
–1.2
0.070
0.108
0.162
S
V
W
–0.45
"100
–1
–5
V
nA
mA
m
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
I
F
= –0.9 A, di/dt = 100 A/ms
V
DD
= –4 V, R
L
= 4
W
I
D
^
–1 A, V
GEN
= –4.5 V, R
G
= 6
W
V
DS
= –4 V, V
GS
= –4.5 V, I
D
= –3.4 A
5.9
1.3
1.4
20
70
35
35
30
30
110
55
55
60
ns
9
nC
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 5 thru 2.5 V
8
I
D
– Drain Current (A)
I
D
– Drain Current (A)
2V
6
8
10
Transfer Characteristics
T
C
= –55_C
25_C
125_C
6
4
1.5 V
2
4
2
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 70693
S-04563—Rev. A, 27-Aug-01
www.vishay.com
2
Si5915DC
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.25
V
GS
= 1.8 V
r
DS(on)
– On-Resistance (
W
)
C – Capacitance (pF)
0.20
800
C
iss
600
1000
Vishay Siliconix
Capacitance
0.15
V
GS
= 2.5 V
0.10
V
GS
= 4.5 V
0.05
400
C
rss
200
C
oss
0.00
0
2
4
6
8
10
0
0
2
4
6
8
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 4 V
I
D
= 3.4 A
4
1.4
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 3.4 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
2
3
4
5
6
7
1.3
1.2
3
1.1
2
1.0
1
0.9
0
0
1
Q
g
– Total Gate Charge (nC)
0.8
–50
–25
0
25
50
75
100
125
150
T
J
– Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10
0.25
On-Resistance vs. Gate-to-Source Voltage
r
DS(on)
– On-Resistance (
W
)
0.20
I
D
= 1 A
0.15
I
D
= 3.4 A
0.10
I
S
– Source Current (A)
T
J
= 150_C
T
J
= 25_C
0.05
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Document Number: 70693
S-04563—Rev. A, 27-Aug-01
www.vishay.com
3
Si5915DC
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.3
50
Single Pulse Power
0.2
V
GS(th)
Variance (V)
I
D
= 250
mA
0.1
Power (W)
40
30
0.0
20
–0.1
10
–0.2
–50
–25
0
25
50
75
100
125
150
0
10
–4
10
–3
10
–2
10
–1
Time (sec)
1
10
100
600
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
t
1
P
DM
0.02
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 90_C/W
t
1
t
2
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
Square Wave Pulse Duration (sec)
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
www.vishay.com
4
Document Number: 70693
S-04563—Rev. A, 27-Aug-01