Preliminary
SIPC05N60S5
Fast CoolMOS
TM
Power Transistor
FEATURES:
•
New revolutionary high voltage technology
•
Ultra low gate charge
•
Worlbest R
DS(on)
per chip area
•
Ultra low effective capacitances
•
Improved noise immunity
Applications:
•
SMPS, resonant applications
Chip Type
SIPC05N60S5
V
DS
600V
I
D
3A
Die Size
2.22 x 2.21 mm
2
Package
sawn on foil
Ordering Code
tbd
MECHANICAL PARAMETER:
Raster size
Source pad size
Gate pad size
Area total / active
Thickness
Wafer size
Flat position
Max.possible chips per wafer
Passivation frontside
Emitter metallization
Collector metallization
Die bond
Wire bond (proposed)
Reject Ink Dot Size
Recommended Storage Environment
2.22 x 2.21
1.40 x 1.79
0.48 x 0.51
4.91 / 2.82
175
150
0
3069
Nitride
3200 nm Al Si 1%
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Source: Al,
≤
500µm; Gate: Al,
≤
125µm
∅
0.30mm
store in original container, in dry nitrogen,
< 6 month
mm
µm
mm
grd
2
mm
Edited by INFINEON technologies AI IP DD HV2, L 5313N, Edition 1, 09.10.00 12:42
Preliminary
SIPC05N60S5
MAXIMUM RATINGS:
Parameter
Drain-Source voltage
DC drain current, limited by T
jmax
Pulsed drain current, t
p
limited by T
jmax
Gate source voltage
Operating junction and storage temperature
Reverse diode dv/dt
I
D
=3A, V
DS
<V
DSS
, di/dt=100 A/µs, T
jmax
=150°C
Symbol
V
DS
I
D
I
Dpuls
V
GS
T
j
, T
s t g
dv/ dt
Value
600
3
6
±20
-55 ... +150
6
Unit
V
A
A
V
°C
KV/µs
STATIC CHARACTERISTICS (tested on chip),
T
j=25
°C,
unless otherwise specified:
Parameter
Drain-source breakdown voltage
Gate-source on-state resistance
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
1)
Symbol
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Conditions
min.
V
GS
=0V , I
D
= 0.25mA
V
GS
=10V, I
D
=2A
I
D
=134µA , V
GS
=V
DS
V
DS
=600V , V
GS
=0V
V
DS
=0V , V
GS
=25V
3.5
Value
typ.
max.
600
1.4
4.5
0.1
1.74
1)
Unit
V
Ω
V
µA
nA
5.5
25
100
this correlates to a max.
R
DS(on)
-value of 1.4Ω at V
GS
=10V, I
D
=2A of this chip packaged in a TO220-package
ELECTRICAL CHARACTERISTICS
(tested at component):
Parameter
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
C
i s s
C
o s s
C
r s s
Conditions
V
D S
= 2 5 V ,
V
GS
= 0 V ,
f
=1MHz
Value
min.
-
-
-
typ.
420
150
3.6
max.
-
-
-
Unit
pF
SWITCHING CHARACTERISTICS
(tested at component), Inductive Load
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
t
d(on)
t
r
t
d( o f f )
t
f
Conditions
T
j
= 2 5
°
C
V
D D
=350V,
I
D
=3.2 A,
V
GS
= 1 0 V ,
R
G
= 2 0
Ω
Value
min.
-
-
-
-
typ.
35
25
40
15
max.
-
-
-
-
Unit
ns
Edited by INFINEON technologies AI IP DD HV2, L 5313N, Edition 1, 09.10.00 12:42
Preliminary
SIPC05N60S5
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
DESCRIPTION:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG i Gr.,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see
address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Edited by INFINEON technologies AI IP DD HV2, L 5313N, Edition 1, 09.10.00 12:42
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