OMD100 OMD400
OMD200 OMD500
FOUR N-CHANNEL MOSFETS IN HERMETIC
POWER PACKAGE
100V Thru 500V, Up To 25 Amp, N-Channel
MOSFET In Hermetic Metal Package
FEATURES
•
•
•
•
Isolated Hermetic Metal Package
Fast Switching
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV and S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits.
MAXIMUM RATINGS PER TRANSISTOR
@ 25°C
PART NUMBER
OMD100
OMD200
OMD400
OMD500
V
DS
100V
200V
400V
500V
R
DS(on)
.08
.11
.35
.43
I
D
25A
25A
13A
11A
3.1
SCHEMATIC
CONNECTION DIAGRAM
FET 4
G
S
D
FET 3
G S
D
1.520
.150
.500
MIN.
.260
1.000
SQ.
45°
REF
.170 R.
TYP.
.156 DIA.
TYP.
.040 LEAD
DIA.
D
S
G
G
S
D
.187
TYP.
.125
(10 PLCS)
.625
.050
.270
FET 1
FET 3
4 11 R2
Supersedes 1 07 R1
3.1 - 1
3.1
OMD100 - OMD500
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD100 (100V)
Parameter
BV
DSS
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
35
1.1
0.1
0.2
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD200 (200V)
Parameter
BV
DSS
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
30
0.1
0.2
(T
C
= 25°C unless otherwise noted)
Min. Typ. Max. Units Test Conditions
100
2.0
4.0
100
- 100
0.25
1.0
V
V
nA
nA
mA
mA
A
1.60
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= +20 V
V
GS
= -20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A,
T
C
= 125 C
Min. Typ. Max. Units Test Conditions
200
2.0
4.0
100
-100
0.25
1.0
V
V
nA
nA
mA
mA
A
1.36 1.76
.085 .110
0.14 .200
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= + 20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A
V
GS
= 10 V, I
D
= 16 A,
T
C
= 125 C
Static Drain-Source On-State
Static Drain-Source On-State
.065 .080
.10
.160
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward
Transductance
1
9.0
10
2700
1300
470
28
45
100
50
S(W
)
V
DS
2 V
DS(on)
, I
D
= 20 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
20 A
R
g
= 5.0
W
, V
G
= 10V
(MOSFET switching times are
essentially independent of
operating temperature.)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
10.0 12.5
2400
600
250
25
60
85
38
S(W
)
V
DS
2 V
DS(on)
, I
D
= 16 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75 V, I
D
@
16 A
R
g
= 5.0
W
,V
GS
= 10V
(MOSFET switching times are
essentially independent of
operating temperature.)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source
Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
400
- 40
- 160
- 2.5
A
A
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source
Current
1
(Body Diode)
- 30
- 120
-2
350
T
C
= 25 C, I
S
= -40 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
t
rr
Diode Forward Voltage
1
Reverse Recovery Time
ns
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
A
A
V
(W )
3.1 - 2
DYNAMIC
DYNAMIC
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
T
C
= 25 C, I
S
= -30 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD400 (400V)
Parameter
BV
DSS
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
15
2.0
0.30
.60
0.1
0.2
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
STATIC P/N OMD500 (500V)
Parameter
BV
DSS
V
GS(th)
I
GSSF
I
GSSR
I
DSS
Drain-Source Breakdown
Voltage
Gate-Threshold Voltage
Gate-Body Leakage Forward
Gate-Body Leakage Reverse
Zero Gate Voltage Drain
Current
I
D(on)
V
DS(on)
R
DS(on)
R
DS(on)
On-State Drain
Voltage
1
Static Drain-Source On-State
Resistance
1
Static Drain-Source On-State
Resistance
1
Current
1
13
2.1
0.1
0.2
(T
C
= 25°C unless otherwise noted)
Min. Typ. Max. Units Test Conditions
400
2.0
4.0
100
- 100
0.25
1.0
V
V
nA
nA
mA
mA
A
2.8
.35
.70
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= +20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8.0 A
V
GS
= 10 V, I
D
= 8.0 A
V
GS
= 10 V, I
D
= 8.0 A,
T
C
= 125 C
Min. Typ. Max. Units Test Conditions
500
2.0
4.0
100
- 100
0.25
1.0
V
V
nA
nA
mA
mA
A
3.0
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= +20 V
V
GS
= - 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 7.0 A
V
GS
= 10 V, I
D
= 7.0 A
V
GS
= 10 V, I
D
= 7.0 A,
T
C
= 125 C
Static Drain-Source On-State
Static Drain-Source On-State
0.35 0.43
0.66 0.88
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
6.0
9.6
2900
450
150
30
40
80
30
S(W
)
V
DS
2 V
DS(on)
, I
D
= 8.0 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 200 V, I
D
@
8.0 A
R
g
=5.0
W
, V
GS
=10V
(MOSFET switching times are
essentially independent of
operating temperature.)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward Transductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
6.0
7.2
2600
280
40
30
46
75
31
S(W
)
V
DS
2 V
DS(on)
, I
D
= 7.0 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 210 V, I
D
@
7.0 A
R
g
= 5.0
W
, V
GS
= 10 V
(MOSFET switching times are
essentially independent of
operating temperature.)
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
600
- 15
- 60
- 1.6
A
A
V
ns
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Reverse Recovery Time
700
- 13
- 52
- 1.4
T
C
= 25 C, I
S
= -15 A, V
GS
= 0
T
J
= 100 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
t
rr
ns
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
A
A
V
(W )
3.1 - 3
DYNAMIC
DYNAMIC
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
S
OMD100 - OMD500
T
C
= 25 C, I
S
= -13 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
3.1
OMD100 - OMD500
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
V
GS
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Gate-Source Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
OMD100
100
100
± 25
± 16
± 100
± 20
125
50
1.0
.033
OMD200
200
200
± 25
± 16
± 80
± 20
125
50
1.0
.033
OMD400
400
400
± 13
±.8
± 54
± 20
125
50
1.0
.033
OMD500
500
500
± 11
±7
± 40
±20
125
50
1.0
.033
Units
V
V
A
A
A
V
W
W
W/°C
W/°C
Junction To Ambient Linear Derating Factor
T
J
T
stg
Lead Temperature
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150
300
-55 to 150 -55 to 150 -55 to 150
300
300
300
°C
°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
2 Package pin limitation = 10 Amps
THERMAL RESISTANCE
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
1.0
30
°C/W
°C/W
Free Air Operation
POWER DERATING
3.1
PACKAGE OPTIONS
MOD PAK
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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