SMBTA42/MMBTA42
NPN Silicon High-Voltage Transistors
•
Low collector-emitter saturation voltage
•
Complementary types:
SMBTA92 / MMBTA92(PNP)
•
Pb-free (RoHS compliant) package
1)
•
Qualified according AEC Q101
3
1
2
Type
SMBTA42/MMBTA42
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation-
T
S
≤
74 °C
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point
2)
1
Pb-containing
Marking
s1D
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
stg
Symbol
R
thJS
Value
300
300
6
500
100
360
150
-65 ... 150
Value
≤
210
Unit
V
mA
mW
°C
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19
SMBTA42/MMBTA42
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Unit
Parameter
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
300
V
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 100 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
300
6
-
-
-
-
µA
Emitter-base breakdown voltage
I
E
= 100 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 200 V,
I
E
= 0
V
CB
= 200 V,
I
E
= 0 ,
T
A
= 150 °C
-
-
I
EBO
h
FE
-
-
-
0.1
20
100
nA
-
Emitter-base cutoff current
V
EB
= 5 V,
I
C
= 0
-
DC current gain
1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
25
40
40
V
CEsat
V
BEsat
-
-
-
-
-
-
-
-
0.5
0.9
V
Collector-emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
-
-
Base emitter saturation voltage
1)
I
C
= 20 mA,
I
B
= 2 mA
AC Characteristics
Transition frequency
I
C
= 10 MHz,
V
CE
= 20 V,
f
= 100 MHz
f
T
C
cb
50
-
70
-
-
3
MHz
pF
Collector-base capacitance
V
CB
= 20 V,
f
= 1 MHz
1
Pulse
test: t < 300µs; D < 2%
2
2007-04-19
SMBTA42/MMBTA42
DC current gain
h
FE
=
ƒ(
I
C
)
V
CE
= 10 V
10
3
5
h
FE
10
2
5
SMBTA 42/43
EHP00844
Operating range
I
C
=
ƒ(
V
CEO
)
T
A
= 25°C,
D
= 0
10
3
mA
SMBTA 42/43
EHP00841
Ι
C
10
2
5
100
µ
s
1 ms
100 ms
DC
10
0
5
500 ms
10
µ
s
10
5
10
1
5
1
10
0
-1
10
5 10
0
5 10
1
5 10
2
mA 10
3
10
-1
10
0
5
10
1
5
10
2
V 5
V
CEO
10
3
Ι
C
Collector current
I
C
=
ƒ(
V
BE
)
V
CE
= 10V
SMBTA 42/43
EHP00843
Collector cutoff current
I
CBO
=
ƒ(
T
A
)
V
CBO
= 160 V
SMBTA 42/43
EHP00842
10
3
mA
10
4
nA
10
3
5
10
2
5
10
1
5
10
0
5
10
-1
Ι
C
10
2
5
max
Ι
CBO
10
1
5
typ
10
0
5
10
-1
0
0.5
1.0
V
BE
V
1.5
0
50
100
T
A
C 150
3
2007-04-19
SMBTA42/MMBTA42
Transition frequency
f
T
=
ƒ(
I
C
)
V
CE
= 10 V,
f
= 100 MHz
10
3
MHz
C
CB
(C
EB
)
SMBTA 42/43
EHP00839
Collector-base capacitance
C
cb
=
ƒ(
V
CB
)
Emitter-base capacitance
C
eb
=
ƒ(
V
EB
)
90
pF
f
T
70
60
50
10
2
40
CEB
5
30
20
10
CCB
10
1
10
0
5
10
1
5
10
2
mA 5
10
3
0
0
4
8
12
16
V
22
Ι
C
V
CB
(V
EB
)
Total power dissipation
P
tot
=
ƒ(
T
S
)
Permissible Pulse Load
P
totmax
/
P
totDC
=
ƒ(
t
p
)
400
10
3
P
tot max
5
P
tot DC
SMBTA 42/43
EHP00840
mW
320
280
t
p
D
=
T
t
p
T
P
tot
10
2
5
240
200
160
10
1
120
D
=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
80
40
0
0
15
30
45
60
75
90 105 120
°C
150
T
S
10
0
10
-6
10
-5
10
-4
10
-3
10
-2
s
t
p
10
0
4
2007-04-19
Package SOT23
SMBTA42/MMBTA42
Package Outline
0.15 MIN.
1
±0.1
0.1 MAX.
1.3
±0.1
2.9
±0.1
3
B
2.4
±0.15
10˚ MAX.
1)
0.4
+0.1
-0.05
1
2
10˚ MAX.
C
0.95
1.9
0.08...0.1
A
5
0...8˚
0.25
M
B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH
s
Pin 1
0.9
1.3
2005, June
Date code (YM)
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.9
2.13
2.65
0.2
8
Pin 1
3.15
1.15
5
2007-04-19
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
