Si3585DV
Vishay Siliconix
N- and P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
20
r
DS(on)
(W)
0.125 @ V
GS
= 4.5 V
0.200 @ V
GS
= 2.5 V
0.200 @ V
GS
= –4.5 V
I
D
(A)
2.4
1.8
–1.8
–1.2
P-Channel
–20
0.340 @ V
GS
= –2.5 V
D
1
S
2
TSOP-6
Top View
G1
1
6
D1
G
2
3 mm
S2
2
5
S1
G
1
G2
3
4
D2
2.85 mm
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
_
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
1.05
1.15
0.59
P-Channel
10 secs
Steady State
–20
"12
V
–1.5
–1.2
–7
A
–0.75
0.83
0.53
W
_C
Symbol
V
DS
V
GS
10 secs
Steady State
20
"12
Unit
2.4
1.7
8
2.0
1.4
–1.8
–1.3
0.75
0.83
0.53
–55 to 150
–1.05
1.15
0.59
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
t
v
10 sec
Maximum Junction-to-Ambient
a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
www.vishay.com
Steady State
Steady State
R
thJA
R
thJF
P-Channel
Typ
93
130
75
Symbol
Typ
93
130
75
Max
110
150
90
Max
110
150
90
Unit
_C/W
C/W
1
Si3585DV
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"12
V
"
V
DS
= 16 V, V
GS
= 0 V
V
DS
= –16 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 16 V, V
GS
= 0 V, T
J
= 55_C
V
DS
= –16 V, V
GS
= 0 V, T
J
= 55_C
On-State Drain Current
a
V
DS
w
5 V, V
GS
= 4.5 V
I
D(on)
V
DS
p
–5 V, V
GS
= –4.5 V
V
GS
= 4.5 V, I
D
= 2.4 A
Drain-Source On-State Resistance
a
V
GS
= –4.5 V, I
D
= –1.8 A
r
DS(on)
V
GS
= 2.5 V, I
D
= 1.8 A
V
GS
= –2.5 V, I
D
= –1.2 A
Forward Transconductance
a
V
DS
= 5 V, I
D
= 2.4 A
g
fs
V
DS
= –5 V, I
D
= –1.8 A
I
S
= 1.05 A, V
GS
= 0 V
V
SD
I
S
= –1.05 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
–5
0.100
0.160
0.160
0.280
5
3.6
0.80
–0.83
1.10
–1.10
V
S
0.125
0.200
0.200
0.340
W
A
0.6
V
–0.5
"100
"100
1
–1
5
–5
mA
m
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate-Body Leakage
I
GSS
Diode Forward Voltage
a
Dynamic
b
N-Ch
Total Gate Charge
Q
g
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 2.4 A
Gate-Source Charge
Q
gs
P-Channel
V
DS
= –10 V, V
GS
= –4.5 V, I
D
= –1.8 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Turn-On Delay Time
t
d(on)
N-Channel
V
DD
= 10 V, R
L
= 10
W
I
D
^
1 A, V
GEN
= 4.5 V, R
G
= 6
W
P-Channel
V
DD
= –10 V, R
L
= 10
W
I
D
^
–1 A, V
GEN
= –4.5 V, R
G
= 6
W
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
Fall Time
Source-Drain
Reverse Recovery Time
t
f
I
F
= 1.05 A, di/dt = 100 A/ms
t
rr
I
F
= –1.05 A, di/dt = 100 A/ms
P-Ch
N-Ch
P-Ch
2.1
2.7
0.3
nC
0.4
0.4
0.6
10
11
30
34
14
19
6
24
30
20
17
17
50
50
25
30
12
36
50
40
ns
3.2
4.0
Gate-Drain Charge
Q
gd
Rise Time
t
r
Turn-Off Delay Time
t
d(off)
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
Si3585DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 4.5 thru 3.5 V
8
I
D
– Drain Current (A)
3V
I
D
– Drain Current (A)
8
25_C
6
125_C
10
T
C
= –55_C
N-CHANNEL
Transfer Characteristics
6
2.5 V
4
4
2
2V
2
1.5 V
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.5
300
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.4
C – Capacitance (pF)
250
C
iss
200
0.3
V
GS
= 2.5 V
0.2
V
GS
= 4.5 V
0.1
150
100
C
oss
50
C
rss
0.0
0
1
2
3
4
5
6
7
0
0
4
8
12
16
20
I
D
– Drain Current (A)
V
DS
– Drain-to-Source Voltage (V)
Gate Charge
4.5
V
GS
– Gate-to-Source Voltage (V)
V
DS
= 10 V
I
D
= 2.4 A
1.8
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 2.4 A
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.0
1.5
2.0
2.5
3.6
1.6
1.4
2.7
1.2
1.8
1.0
0.9
0.8
0.0
0.0
0.5
0.6
–50
–25
0
25
50
75
100
125
150
Q
g
– Total Gate Charge (nC)
T
J
– Junction Temperature (_C)
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
www.vishay.com
3
Si3585DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
10
0.40
I
D
= 2.4 A
r DS(on)– On-Resistance (
W
)
0.32
I
D
= 1 A
0.24
N-CHANNEL
On-Resistance vs. Gate-to-Source Voltage
I
S
– Source Current (A)
T
J
= 150_C
1
0.16
T
J
= 25_C
0.08
0.1
0.00
0.3
0.6
0.9
1.2
1.5
0.00
0
1
2
3
4
5
V
SD
– Source-to-Drain Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Threshold Voltage
0.4
I
D
= 250
mA
0.2
V
GS(th)
Variance (V)
6
8
Single Pulse Power, Junction-to-Ambient
–0.0
Power (W)
4
–0.2
2
–0.4
–0.6
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
Time (sec)
1
10
30
T
J
– Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 87_C/W
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
10
100
600
Square Wave Pulse Duration (sec)
www.vishay.com
4
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
Si3585DV
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
10
V
GS
= 4.5 thru 4 V
8
6
I
D
– Drain Current (A)
3V
6
I
D
– Drain Current (A)
25_C
3.5 V
8
P-CHANNEL
Transfer Characteristics
T
C
= –55_C
125_C
4
4
2.5 V
2
2V
1.5 V
2
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.6
450
Capacitance
r
DS(on)
– On-Resistance (
W
)
0.5
C – Capacitance (pF)
V
GS
= 2.5 V
0.4
360
C
iss
270
0.3
V
GS
= 3.6 V
180
C
oss
90
C
rss
0
4
8
12
16
20
0.2
V
GS
= 4.5 V
0.1
0.0
0
1
2
3
4
5
6
7
I
D
– Drain Current (A)
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
0
V
DS
– Drain-to-Source Voltage (V)
www.vishay.com
5
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