PD - 91352B
HEXFET Power MOSFET
l
l
l
l
l
l
IRF530NS
IRF530NL
®
V
DSS
= 100V
R
DS(on)
= 90mΩ
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
G
S
I
D
= 17A
Description
Advanced HEXFET
®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF530NL) is available for low-profile applications.
D
2
Pak
IRF530NS
TO-262
IRF530NL
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
60
3.8
70
0.47
± 20
9.0
7.0
7.4
-55 to + 175
300 (1.6mm from case )
Units
A
W
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
2.15
40
Units
°C/W
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1
09/04/02
IRF530NS/IRF530NL
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min.
100
–––
–––
2.0
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.2
22
35
25
4.5
7.5
––– 920
––– 130
–––
19
––– 340
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
90
mΩ V
GS
= 10V, I
D
= 9.0A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 50V, I
D
= 9.0A
25
V
DS
= 100V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
37
I
D
= 9.0A
7.2
nC
V
DS
= 80V
11
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 50V
–––
I
D
= 9.0A
ns
–––
R
G
= 12Ω
–––
V
GS
= 10V, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz, See Fig. 5
93
mJ I
AS
= 9.0A, L = 2.3mH
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
17
––– –––
showing the
A
G
integral reverse
60
––– –––
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 9.0A, V
GS
= 0V
––– 93 140
ns
T
J
= 25°C, I
F
= 9.0A
––– 320 480
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Starting T
J
= 25°C, L = 2.3mH
R
G
= 25Ω, I
AS
= 9.0A, V
GS
=10V (See Figure 12)
I
SD
≤
9.0A, di/dt
≤
410A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Uses IRF530N data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to
application note #AN-994
2
www.irf.com
IRF530NS/IRF530NL
100
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
4.5V
10
10
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.5
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 15A
I
D
, Drain-to-Source Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
T
J
= 25
°
C
T
J
= 175
°
C
10
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
V
GS
= 10V
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF530NS/IRF530NL
1600
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 9.0A
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
16
C, Capacitance (pF)
1200
Ciss
12
800
Coss
400
8
Crss
0
4
1
10
100
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T
J
= 175
°
C
I
SD
, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100
10
10
100µsec
1
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
T
J
= 25
°
C
V
GS
= 0 V
0.4
0.6
0.8
1.0
1.2
1.4
0.1
0.2
0.1
100
1000
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF530NS/IRF530NL
20
V
DS
16
R
D
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
12
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
8
4
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.05
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
0.1
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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