PD-94609A
IRF7MS2907
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
Product Summary
Part Number
IRF7MS2907
R
DS(on)
0.0055
I
D
45A*
Low-Ohmic
TO-254AA
75V, N-CHANNEL
HEXFET
MOSFET TECHNOLOGY
Description
Seventh Generation HEXFET power MOSFETs from IR
HiRel utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon unit area. This
benefit, combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits.
Features
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
I
D
@ V
GS
= 10V, T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
g
45*
45*
180
208
1.67
± 20
760
45
20.8
2.2
-55 to + 150
°C
W
W/°C
V
mJ
A
mJ
V/ns
A
I
D
@ V
GS
= 10V, T
C
= 100°C Continuous Drain Current
Units
* Current is limited by package
For Footnotes refer to the page 2.
1
2016-06-29
IRF7MS2907
Electrical Characteristics @ T
j
= 25°C (Unless Otherwise Specified)
Parameter
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
75
–––
–––
2.0
70
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.087
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
––– 0.0055
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
4.0
–––
20
250
100
-100
375
60
150
40
135
175
75
–––
V
GS
= 10V, I
D
= 45A
V
S
µA
nA
nC
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 15V, I
D
= 45A
V
DS
= 75V, V
GS
= 0V
V
DS
= 60V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 45A
V
DS
= 60V
V
GS
= 10V
V
DD
= 38V
I
D
= 45A
R
G
= 1.2
V
GS
= 10V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
ns
nH
––– 12060 –––
––– 2280 –––
––– 605 –––
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
45*
180
1.0
175
850
A
V
ns
nC
Test Conditions
T
J
= 25°C,I
S
= 45A, V
GS
= 0V
T
J
= 25°C, I
F
= 45A, V
DD
≤
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
* Current is limited by package
Thermal Resistance
Parameter
R
JC
R
CS
R
JA
Junction-to-Case
Case -to-Sink
Junction-to-Ambient (Typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.21
–––
Max.
0.6
–––
48
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 25V, starting T
J
= 25°C, L = 0.75mH, Peak I
L
= 45A, V
GS
= 10V, R
G
= 25
V
I
SD
45A, di/dt
380A/µs, V
DD
75V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%.
2
2016-06-29
IRF7MS2907
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
4.5V
4.5V
20
s PULSE WIDTH
Tj = 25°C
10
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
20
s PULSE WIDTH
Tj = 150°C
10
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
2.5
Fig 2.
Typical Output Characteristics
I
D
= 45A
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (
)
2.0
100
T J = 150°C
1.5
T J = 25°C
10
1.0
1
3
3.5
4
VDS = 25V
20
s PULSE WIDTH
4.5
5
5.5
6
0.5
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
20000
Fig 4.
Normalized On-Resistance Vs. Temperature
20
16000
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= 45A
16
V
DS
= 60V
V
DS
= 37V
V
DS
= 15V
C, Capacitance (pF)
Ciss
12000
12
8000
8
Coss
4000
Crss
4
0
1
10
100
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
100
200
300
400
500
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
3
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2016-06-29
IRF7MS2907
1000
ISD , Reverse Drain Current (
)
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
T J = 150°C
ID, Drain-to-Source Current (A)
100
10
T J = 25°C
100µs
1ms
10
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-to-Drain Voltage (V)
1
0ms
100
1000
1
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode Forward Voltage
160
Fig 8.
Maximum Safe Operating Area
2000
E
AS
, Single Pulse Avalanche Energy (mJ)
LIMITED BY PACKAGE
I
D
, Drain Current (A)
120
1600
ID
20A
28.5A
BOTTOM
45A
TOP
1200
80
800
40
400
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, Case Temperature
( ° C)
Starting T
J
, Junction Temperature (
°
C)
Fig 9.
Maximum Drain Current Vs. Case Temperature
1
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
2016-06-29
IRF7MS2907
V
(BR)DSS
tp
I
AS
Fig 12a.
Unclamped Inductive Test Circuit
Fig 12b.
Unclamped Inductive Waveforms
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit
Fig 14a.
Switching Time Test Circuit
5
Fig 14b.
Switching Time Waveforms
2016-06-29
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