Datasheet> 器件分类 > 分立半导体> 二极管> CMPD3003SLEADFREE

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CMPD3003SLEADFREE: 产品描述Rectifier Diode, 2 Element, 0.6A, 180V V(RRM), Silicon, SOT-23, 3 PIN; 产品类别分立半导体二极管; 文件大小642KB，共2页; 制造商Central Semiconductor; 标准

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CMPD3003SLEADFREE概述

Rectifier Diode, 2 Element, 0.6A, 180V V(RRM), Silicon, SOT-23, 3 PIN

CMPD3003SLEADFREE规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
零件包装代码	SOT-23
包装说明	SOT-23, 3 PIN
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
配置	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JESD-30 代码	R-PDSO-G3
JESD-609代码	e3
湿度敏感等级	1
元件数量	2
端子数量	3
最高工作温度	150 °C
最低工作温度	-65 °C
最大输出电流	0.6 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
最大功率耗散	0.35 W
认证状态	Not Qualified
最大重复峰值反向电压	180 V
表面贴装	YES
端子面层	MATTE TIN (315)
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	10
Base Number Matches	1

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CMPD3003

CMPD3003A

CMPD3003C

CMPD3003S

SURFACE MOUNT

LOW LEAKAGE

SILICON SWITCHING DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPD3003 series

types are silicon switching diodes manufactured by the

epitaxial planar process, designed for switching appli-

cations requiring an extremely low leakage diode.

SOT-23 CASE

The following configurations are available:

CMPD3003

SINGLE

CMPD3003A DUAL, COMMON ANODE

CMPD3003C DUAL, COMMON CATHODE

CMPD3003S DUAL, IN SERIES

MAXIMUM RATINGS:

(TA=25°C)

Continuous Reverse Voltage

Average Forward Current

Continuous Forward Current

Peak Repetitive Forward Current

Peak Forward Surge Current, tp=1.0µs

Peak Forward Surge Current, tp=1.0s

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

MARKING

SYMBOL

IFRM

IFSM

TJ, Tstg

CODE:

LLO

LLA

LLC

LLS

UNITS

180

200

600

700

2.0

1.0

°C

°C/W

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER DIODE:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

VR=125V

1.0

BVR

VR=125V, TA=150°C

VR=180V

VR=180V, TA=150°C

IR=5.0µA

IF=1.0mA

IF=10mA

IF=50mA

IF=100mA

IF=200mA

IF=300mA

VR=0, f=1.0MHz

200

0.62

0.72

0.80

0.83

0.87

0.90

0.72

0.83

0.89

0.93

1.10

1.15

4.0

3.0

5.0

UNITS

µA

R4 (25-January 2010)

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