ASMT-QxBC-Nxxxx
Super 0.5W Power PLCC-4
Surface Mount LED Indicator
Data Sheet
Description
The Super 0.5W Power PLCC-4 SMT LED is Blue mid-Power
PLCC-4 SMT LEDs using InGaN chip technology. The
package can be driven at high current due to its superior
package design. The product is able to dissipate the heat
more efficiently compared to the Power PLCC-4 SMT LEDs.
These LEDs produce higher light output with better flux
performance compared to the Power PLCC-4 SMT LED.
The Super 0.5W Power PLCC-4 SMT LEDs are designed for
higher reliability, better performance, and operate under
a wide range of environmental conditions. The perfor-
mance characteristics of these new mid-power LEDs make
them uniquely suitable for use in harsh conditions such as
in automotive applications, and in electronics signs and
signals.
To facilitate easy pick and place assembly, the LEDs are
packed in EIA-compliant tape and reel. Every reel is
shipped in single intensity and color bin, to provide close
uniformity.
Features
x
Industry Standard PLCC 4 platform (3.2x2.8x1.9mm)
x
High reliability package with enhanced silicone resin
encapsulation
x
High brightness with optimum flux performance using
InGaN chip technologies
x
Available in Blue color
x
Available in 8mm carrier tape & 7 inch reel
x
Low Thermal Resistance 40°C/W
x
Wide viewing angle at 120 degree
x
JEDEC MSL 2
Applications
1. Electronic signs and signals
a. Decorative/Advertising Lighting
b. Channel Lettering
c. Signs Luminaire
d. RGB Backlighting
CAUTION:
ASMT-QxBC-Nxxxx LEDs are Class 2 ESD sensitive. Please observe appropriate precautions
during handling and processing. Refer to Avago Application Note AN-1142 for additional details.
Package Drawing
0.79 ± 0.3
2.8 ± 0.2
2.2 ± 0.2
A
A
1.9 ± 0.2
0.6 ± 0.3
1.15 ± 0.2
3.6 ± 0.2
3.2 ± 0.2
I
2.4
0.97
C
CATHODE
MARKING
C
0.7
Notes:
1. All Dimensions in millimeters.
2. Lead Polarity as shown in Figure 13.
3. Terminal Finish: Ag plating
4. Encapsulation material: Silicone resin
Figure 1. Package Drawing
Table 1. Device Selection Guide (T
J
= 25°C)
Luminous Flux,
)
V[1]
(lm)
Color
Blue
Part Number
ASMT-QBBC-NACxE
Min. Flux
(lm)
4.3
Typ. Flux
(lm)
7.0
Max. Flux
(lm)
9.0
0.56 (TYP.)
0.41 (TYP.)
Test Current
(mA)
150
Dice Technology
InGaN
Notes:
1.
)
V
is the total luminous flux output as measured with an integrating sphere at mono pulse conditions.
2. Tolerance = ±12%
Part Numbering System
ASMT- Q
X
1
B C
–
N
X
2
X
3
X
4
X
5
Packaging Option
Color Bin Selection
Max.
Flux
Bin Selection
Min.
Flux
Bin Selection
Color
B
–
Blue
2
Table 2. Absolute Maximum Ratings (T
A
= 25°C)
Parameters
DC Forward Current
[1]
Peak Forward Current
[2]
Power Dissipation
Reverse Voltage, V
R
@ 10 μA
Junction Temperature
Operating Temperature
Storage Temperature
Notes:
1. Derate Linearly as shown in Figure 6.
2. Duty Factor = 10%, Frequency = 1kHz
ASMT-QxBC-Nxxxx
150 mA
300 mA
570 mW
4
125°C
-40°C to +120°C
-40°C to +120°C
Table 3. Optical Characteristics (T
J
= 25°C)
Peak
Wavelength
O
PEAK
(nm)
Typ.
458.0
Color
Blue
Part Number
ASMT-QBBC-Nxxxx
Dice
Technology
InGaN
Dominant
Wavelength
O
D
(nm)
Typ.
464.0
Viewing
Angle 2T½
[1]
(Degrees)
Typ.
120
Luminous
Efficiency
Ke
(lm/W)
Typ.
10
Total Flux / Lumi-
nous Intensity
)
V
(lm) / I
V
(cd)
Typ.
2.70
Notes:
1.
T½
is the off-axis angle where the luminous intensity is ½ the peak intensity.
Table 4. Electrical Characteristics (T
J
= 25°C)
Forward Voltage
V
F
(Volts) @ I
F
= 150 mA
Part Number
ASMT-QBBC-NxxxE
Typ.
3.4
Max.
3.8
Thermal
Resistance
RT
J-P
(°C/W)
40
3
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
380
430
480
530 580 630
WAVELENGTH
-
nm
680
730
780
300
250
FORWARD
CURRENT
-
mA
200
150
100
50
0
0
1
2
FORWARD
VOLTAGE
-
V
3
4
Figure 2. Relative Intensity Vs. Wavelength
RELATIVE
INTENSITY
Figure 3. Forward Current Vs. Forward Voltage.
1.8
NORMALIZED LUMINOUS
INTENSITY
(NORMALIZED AT 25°C)
0
50
100
150
200
DC
FORWARD
CURRENT
-
mA
250
300
1.6
RELATIVE LUMINOUS
FLUX
(NORMALIZED AT
150
mA)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
-25
0
25
50
75
T
J
-
JUNCTION
TEMPERATURE -
°C
100
Figure 4. Relative Flux vs. Forward Current
Figure 5. Relative Flux Vs. Temperature
160
140
120
CURRENT
-
mA
100
80
60
40
20
0
0
20
40
60
80
100
120
140
Rθ
JA
= 110°C/W
CURRENT
-
mA
Rθ
JA
=
90°C/W
160
140
120
100
80
60
40
20
0
0
20
40
60
80
100
TEMPERATURE
(°C)
120
140
Rθ
JP
=
40°C/W
Figure 6a. Maximum Forward Current Vs. Ambient Temperature. Derated
Based on T
JMAX
= 125°C, RT
J-A
= 110°C/W & 90°C/W.
Figure 6b. Maximum Forward Current Vs. Solder Point Temperature. Derated
Based on T
JMAX
= 125°C, RT
J-P
= 40°C/W.
4
0.40
D
=
0.05
0.10
0.25
0.50
1
0.40
D
=
t
p
T
t
p
I
F
T
D
=
0.05
0.10
0.25
0.50
1
0.30
CURRENT
-
A
0.30
CURRENT
-
A
I
F
T
0.20
0.20
0.10
t
p
D
=
T
1.00E-03 1.00E-02
t
p
0.10
0.00
1.00E-05 1.00E-04
1.00E-01 1.00E+00 1.00E+01 1.00E+02
0.00
1.00E-05
1.00E-04
1.00E-03
1.00E-02
1.00E-01 1.00E+00 1.00E+01 1.00E+02
t - Time -
(S)
Figure 7a. Maximum Pulse Current Vs. Ambient Temperature. Derated Based
on T
A
= 25°C, RT
J-A
= 110°C/W.
510
DOMINANT WAVELENGTH
-
nm
FORWARD
VOLTAGE SHIFT
-
V
500
490
480
470
460
450
440
0
50
100
150
200
FORWARD
CURRENT
-
mA
250
300
tp - Time -
(S)
Figure 7b. Maximum Pulse Current Vs. Ambient Temperature. Derated Based
on T
A
= 85°C, RT
J-A
= 110°C/W.
0.25
0.20
0.15
0.10
0.05
0.00
-0.05
-0.10
-0.15
-0.20
-50
-25
0
25
50
75
TJ -
JUNCTION
TEMPERATURE -
°C
100
Figure 8. Chromaticity Shift Vs. Forward Current
Figure 9. Forward Voltage Shift Vs. Temperature.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-90
-60
-30
0
30
60
ANGULAR DISPLACEMENT
-
DEGREES
90
Figure 10. Radiation Pattern
5
NORMALIZED
INTENSITY
Microchip MCU
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