PD - 94349A
HEXFET
®
POWER MOSFET
THRU-HOLE (TO-257AA)
IRF5Y31N20
200V, N-CHANNEL
Product Summary
Part Number
IRF5Y31N20
BVDSS
200V
R
DS(on)
0.092Ω
I
D
18A*
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient device
for use in a wide variety of applications.
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
TO-257AA
Features:
n
n
n
n
n
n
n
Low R
DS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
* Current is limited by package
For footnotes refer to the last page
18*
14
72
100
0.8
±20
170
18
10
1.7
-55 to 150
o
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
C
300 (0.063in./1.6mm from case for 10s)
4.3 (Typical)
g
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1
01/07/02
IRF5Y31N20
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
200
—
—
3.0
14
—
—
—
—
—
—
—
—
—
—
—
—
Typ Max Units
—
0.27
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
—
—
0.092
5.5
—
25
250
100
-100
100
32
46
30
148
50
27
—
V
V/°C
Ω
V
S( )
µA
Ω
Test Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1.0mA
VGS = 10V, ID = 14A
➃
VDS = VGS, ID = 250µA
VDS =15V, IDS = 14A
➃
VDS = 200V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 18A
VDS = 160V
VDD = 100V, ID = 18A,
VGS = 10V, RG = 2.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
l Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
2480
370
73
—
—
—
pF
Measured from drain lead (6mm /
0.25in. from package ) to source
lead (6mm/0.25in. from pacakge
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
QRR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
18*
72
1.3
300
2.3
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = 18A, VGS = 0V
➃
Tj = 25°C, IF = 18A, di/dt
≤
100A/µs
VDD
≤
25V
➃
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
—
—
1.25
°C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF5Y31N20
100
VGS
TOP
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
100
VGS
15V
12V
10V
8.0V
7.5V
7.0V
6.5V
BOTTOM 6.0V
TOP
ID, Drain-to-Source Current (A)
10
ID, Drain-to-Source Current (A)
10
6.0V
1
1
6.0V
0.1
0.1
20µs PULSE WIDTH,T J= 25°C
1
10
100
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
T
J
= 150
°
C
10
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 18A
I
D
, Drain-to-Source Current (A)
2.0
1.5
T
J
= 25
°
C
1.0
1
0.5
0.1
6.0
15
V DS = 50V
20µs PULSE WIDTH
7.5
6.5
7.0
8.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF5Y31N20
4000
V
GS
, Gate-to-Source Voltage (V)
C, Capacitance (pF)
3000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 18A
16
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
Ciss
12
2000
C
oss
1000
8
C
rss
0
1
10
100
4
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 13
60
80
100
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
T J = 150°C
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD , Reverse Drain Current (
Α
)
10
ID, Drain-to-Source Current (A)
100
10
100µs
1ms
T J = 25°C
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
10ms
VGS = 0V
0.1
0.0
0.4
0.8
1.2
1.6
2.0
VSD , Source-to-Drain Voltage ( V )
1000
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF5Y31N20
24
LIMITED BY PACKAGE
20
V
DS
V
GS
R
G
R
D
D.U.T.
+
I
D
, Drain Current (A)
-
V
DD
16
V
GS
12
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
8
Fig 10a.
Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.01
0.00001
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
P
DM
t
1
t
2
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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