Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 雪崩能效等级（Eas） | 100 mJ |
| 外壳连接 | DRAIN |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 4.3 A |
| 最大漏源导通电阻 | 0.54 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252AA |
| JESD-30 代码 | R-PSSO-G2 |
| JESD-609代码 | e0 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 2 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 25 W |
| 最大脉冲漏极电流 (IDM) | 17 A |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | TIN LEAD |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| IRFR110TRR | IRFR420TRLPBF | IRFR310TRPBF | IRFR310TRLPBF | IRFR420TRPBF | IRFR310TRRPBF | |
|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, |
| 是否无铅 | 含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 不符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| Reach Compliance Code | compliant | unknown | not_compliant | not_compliant | unknown | not_compliant |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 100 V | 500 V | 400 V | 400 V | 500 V | 400 V |
| 最大漏极电流 (ID) | 4.3 A | 2.4 A | 1.7 A | 1.7 A | 2.4 A | 1.7 A |
| 最大漏源导通电阻 | 0.54 Ω | 3 Ω | 3.6 Ω | 3.6 Ω | 3 Ω | 3.6 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e0 | e3 | e3 | e3 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 | 1 | 1 | 1 | 1 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 2 | 2 | 2 | 2 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | 260 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 25 W | 42 W | 25 W | 25 W | 42 W | 25 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 端子面层 | TIN LEAD | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | 30 | 30 | 30 | 30 |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 雪崩能效等级（Eas） | 100 mJ | 400 mJ | - | 86 mJ | - | 86 mJ |
| 最高工作温度 | 150 °C | 150 °C | - | 150 °C | 150 °C | 150 °C |
| 最大脉冲漏极电流 (IDM) | 17 A | 8 A | - | 6 A | - | 6 A |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
| 厂商名称 | - | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） | International Rectifier （ Infineon ） |
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