MPSA27
Darlington Transistor
NPN Silicon
Features
•
These are Pb--Free Devices*
MAXIMUM RATINGS
Rating
Collector--Emitter Voltage
Emitter--Base Voltage
Collector Current -- Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CES
V
EBO
I
C
P
D
T
J
, T
stg
Value
60
10
500
625
5.0
--55 to +150
Unit
Vdc
Vdc
mAdc
mW
mW/°C
°C
TO-
-92
CASE 29
STYLE 1
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COLLECTOR
3
BASE
2
EMITTER
1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction--to--Ambient
Symbol
R
θJA
Max
200
Unit
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
STRAIGHT LEAD
BULK PACK
12
1
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
MARKING DIAGRAM
MPS
A27
AYWW
G
G
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPSA27G
MPSA27RLRA
MPSA27RLRAG
Package
TO--92
(Pb--Free)
TO--92
TO--92
(Pb--Free)
Shipping
†
5000 Units/Bulk
2000/Tape & Reel
2000/Tape & Reel
*For additional information on our Pb--Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MPSA27/D
April, 2007 - Rev. 4
-
1
MPSA27
V
CE
= 5.0 V
T
A
= 125°C
V, VOLTAGE (VOLTS)
1.6
1.4
1.2
1.0
0.8
20
0
1.0
2.0 3.0
T
A
= --55°C
10
20 30
100
200
500
1k
0.6
1.0
2.0 3.0
10
20 30
V
CE(S)
@ I
C
/I
B
= 1.0 k
100
200
500
1k
T
A
= 25°C
V
BE(S)
@ I
C
/I
B
= 1.0 k
V
BE(ON)
@ V
CE
= 5.0 V
120
h FE , DC CURRENT GAIN (k)
100
80
60
40
T
A
= 25°C
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. “ON” Voltages
VCE , COLLECTOR--EMITTER VOLTAGE (VOLTS)
1.6
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.1 0.2
0.5 1.0 2.0
5.0 10
20
50 100 200
I
C
= 10 mA
I
C
= 100 mA
I
C
= 500 mA
I
C
= 250 mA
T
A
= 25°C
hfe , SMALL--SIGNAL CURRENT GAIN
1.5
4.0
V
CE
= 5.0 V
f = 100 MHz
T
A
= 25°C
2.0
1.0
0.8
0.6
0.4
0.2
500 1 k
0.5
1.0
2.0
5.0
10
20
50
100
200
500
I
B
, BASE CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. High Frequency Current Gain
1k
I C , COLLECTOR CURRENT (mA)
500
1.0 ms
1.0 s
100
ms
200
T
A
= 25°C
100
50
20
10
1.0
2.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
4.0
6.0
10
20
40 50 60
T
C
= 25°C
V
CE
, COLLECTOR--EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region - Safe Operating Area
-
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3
MPSA27
PACKAGE DIMENSIONS
TO-
-92 (TO-
-226)
CASE 29--11
ISSUE AM
A
R
P
L
SEATING
PLANE
B
STRAIGHT LEAD
BULK PACK
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
------
0.250
------
0.080
0.105
------
0.100
0.115
------
0.135
------
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
------
6.35
------
2.04
2.66
------
2.54
2.93
------
3.43
------
K
X X
H
V
1
D
G
J
C
N
N
SECTION X-
-X
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
------
2.04
2.66
1.50
4.00
2.93
------
3.43
------
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
K
G
X X
V
1
D
J
C
N
SECTION X-
-X
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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4
MPSA27/D
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