ON Semiconductort
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
MPS918
15
30
3.0
50
350
2.8
0.85
6.8
–55 to +150
MPS3563
12
30
2.0
Unit
Vdc
Vdc
Vdc
mAdc
MPS918*
MPS3563
*ON Semiconductor Preferred Device
1
mW
mW/°C
Watts
mW/°C
°C
2
3
CASE 29–10, STYLE 1
TO–92 (TO–226AL)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
(1)
R
qJC
Max
357
147
Unit
°C/W
°C/W
2
BASE
COLLECTOR
3
1
EMITTER
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(2)
(I
C
= 3.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 1.0
mAdc,
I
E
= 0)
(I
C
= 100
mAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 15 Vdc, I
E
= 0)
V
(BR)CEO
MPS918
MPS3563
V
(BR)CBO
MPS918
MPS3563
V
(BR)EBO
MPS918
MPS3563
I
CBO
MPS918
MPS3563
—
—
10
50
3.0
2.0
—
—
nAdc
30
30
—
—
Vdc
15
12
—
—
Vdc
Vdc
1. R
qJA
is measured with the device soldered into a typical printed circuit board.
2. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
1.0%.
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2001
853
March, 2001 – Rev. 1
Publication Order Number:
MPS918/D
MPS918 MPS3563
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(2)
(I
C
= 3.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 8.0 mAdc, V
CE
= 10 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
Base–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
h
FE
MPS918
MPS3563
V
CE(sat)
MPS918
V
BE(sat)
MPS918
—
1.0
Vdc
20
20
—
—
200
0.4
Vdc
—
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(2)
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
(I
C
= 8.0 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 0 Vdc, I
E
= 0, f = 1.0 MHz)
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Small–Signal Current Gain
(I
C
= 8.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= 1.0 mAdc, V
CE
= 6.0 Vdc, R
S
= 400 kΩ, f = 60 MHz)
f
T
MPS918
MPS3563
C
obo
MPS918
MPS918
MPS3563
C
ibo
MPS918
h
fe
MPS3563
NF
MPS918
—
6.0
dB
20
250
—
—
—
—
—
3.0
1.7
1.7
2.0
pF
600
600
—
1500
pF
MHz
FUNCTIONAL TEST
Common–Emitter Amplifier Power Gain
(I
C
= 6.0 mAdc, V
CB
= 12 Vdc, f = 200 MHz)
(I
C
= 8.0 mAdc, V
CE
= 10 Vdc, f = 200 MHz)
(G
fd
+ G
re
t
–20 dB)
Power Output
(I
C
= 8.0 mAdc, V
CB
= 15 Vdc, f = 500 MHz)
Oscillator Collector Efficiency
(I
C
= 8.0 mAdc, V
CB
= 15 Vdc, P
out
= 30 mW, f = 500 MHz)
2. Pulse Test: Pulse Width
v
300
ms;
Duty Cycle
v
1.0%.
G
pe
MPS918
MPS3563
P
out
MPS918
η
MPS918
25
—
%
15
14
30
—
—
—
mW
dB
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