MPS5172
General Purpose Transistor
NPN Silicon
Features
•
Pb−Free Packages are Available*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 60°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
P
D
T
J
, T
stg
Value
25
25
5.0
100
625
5.0
450
1.5
12
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
mW
W
mW/°C
°C
TO−92 (TO−226)
CASE 29
STYLE 1
2
BASE
1
EMITTER
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
MPS
5172
AYWWG
G
MARKING DIAGRAM
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
MPS5172 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MPS5172
MPS5172G
MPS5172RLRM
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
Package
TO−92
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
5000 / Bulk
5000 / Bulk
2000/Ammo Pack
2000/Ammo Pack
MPS5172RLRMG
1
December, 2005 − Rev. 2
Publication Order Number:
MPS5172/D
MPS5172
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(I
C
= 10 mA, I
B
= 0)
Collector Cutoff Current
(V
CE
= 25 V, I
B
= 0)
Collector Cutoff Current
(V
CB
= 25 V, I
E
= 0)
(V
CB
= 25 V, I
E
= 0, T
A
= 100°C)
Emitter Cutoff Current
(V
EB
= 5.0 V, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(V
CE
= 10 V, I
C
= 10 mA)
Collector−Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
Base−Emitter On Voltage
(I
C
= 10 mAdc, V
CE
= 10 V)
SMALL−SIGNAL CHARACTERISTICS
Collector−Base Capacitance
(V
CB
= 10 V, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
C
cb
h
fe
1.6
100
10
750
pF
−
h
FE
V
CE(sat)
V
BE(on)
100
−
0.5
500
0.25
1.25
−
Vdc
Vdc
V
(BR)CEO
I
CES
I
CBO
−
−
I
EBO
−
100
10
100
nAdc
mAdc
nAdc
25
−
−
100
Vdc
nAdc
Symbol
Min
Max
Unit
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MPS5172
TYPICAL STATIC CHARACTERISTICS
400
T
J
= 125°C
h FE , DC CURRENT GAIN
200
25°C
−55°C
80
60
40
0.004 0.006 0.01
V
CE
= 1.0 V
V
CE
= 10 V
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
2.0
I
C
, COLLECTOR CURRENT (mA)
3.0
5.0 7.0 10
20
30
50
70 100
100
Figure 1. DC Current Gain
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.0
T
J
= 25°C
IC, COLLECTOR CURRENT (mA)
0.8
I
C
= 1.0 mA
10 mA
50 mA
100 mA
100
T
A
= 25°C
PULSE WIDTH = 300
ms
80 DUTY CYCLE
≤
2.0%
I
B
= 500
mA
400
mA
300
mA
0.6
60
200
mA
40
100
mA
20
0
0.4
0.2
0
0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0
I
B
, BASE CURRENT (mA)
5.0 10
20
0
5.0
10
15
20
25
30
35
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
Figure 2. Collector Saturation Region
Figure 3. Collector Characteristics
1.2
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1
T
J
= 25°C
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.4
1.6
0.8
*APPLIES for I
C
/I
B
≤
h
FE
/2
25°C to 125°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
0
*q
VC
for V
CE(sat)
− 55°C to 25°C
−0.8
25°C to 125°C
−1.6
q
VB
for V
BE
0.2
− 55°C to 25°C
50
100
V
CE(sat)
@ I
C
/I
B
= 10
0.2
0.5 1.0 2.0
5.0
10
20
I
C
, COLLECTOR CURRENT (mA)
50
100
−2.4
0.1
0.5
1.0 2.0
5.0 10 20
I
C
, COLLECTOR CURRENT (mA)
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
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MPS5172
TYPICAL DYNAMIC CHARACTERISTICS
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
500
T
J
= 25°C
f = 100 MHz
300
200
C, CAPACITANCE (pF)
V
CE
= 20 V
5.0 V
10
7.0
5.0
C
ib
C
ob
T
J
= 25°C
f = 1.0 MHz
3.0
2.0
100
70
50
0.5 0.7 1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 6. Current−Gain − Bandwidth Product
Figure 7. Capacitance
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MPS5172
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100 200
P
(pk)
t
1
t
2
FIGURE 9
DUTY CYCLE, D = t
1
/t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN−569)
Z
qJA(t)
= r(t)
•
R
qJA
T
J(pk)
− T
A
= P
(pk)
Z
qJA(t)
0.01
0.01 0.02
500 1.0 k 2.0 k
5.0 k 10 k 20 k 50 k 100 k
Figure 8. Thermal Response
10
4
V
CC
= 30 Vdc
IC, COLLECTOR CURRENT (nA)
10
3
10
2
10
1
10
0
10
−1
10
−2
− 40 − 20
I
CBO
AND
I
CEX
@ V
BE(off)
= 3.0 Vdc
I
CEO
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
0
+ 20
+ 40
+ 60
+ 80 + 100 + 120 + 140 + 160
T
J
, JUNCTION TEMPERATURE (°C)
Figure 10.
400
IC, COLLECTOR CURRENT (mA)
200
100
60
40
20
10
6.0
4.0
2.0
1.0 ms
T
C
= 25°C
T
A
= 25°C
dc
100
ms
10
ms
1.0 s
A train of periodical power pulses can be represented by
the model as shown in Figure 9. Using the model and the de-
vice thermal response the normalized effective transient
thermal resistance of Figure 8 was calculated for various
duty cycles.
To find Z
qJA(t)
, multiply the value obtained from Figure
8 by the steady state value R
qJA
.
Example:
The MPS3904 is dissipating 2.0 watts peak under the follow-
ing conditions:
t
1
= 1.0 ms, t
2
= 5.0 ms. (D = 0.2)
Using Figure 8 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
DT
= r(t) x P
(pk)
x R
qJA
= 0.22 x 2.0 x 200 = 88°C.
For more information, see ON Semiconductor Applica-
tion Note AN569/D, available from the Literature Distribu-
tion Center or on our website at www.onsemi.com.
dc
T
J
= 150°C
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
4.0
6.0 8.0 10
20
V
CE
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
40
The safe operating area curves indicate I
C
−V
CE
limits
of the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 11 is based upon T
J(pk)
= 150°C; T
C
or
T
A
is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided T
J(pk)
≤
150°C. T
J(pk)
may be calculated from the data in Figure 8. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
Figure 11.
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