MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF373/D
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications at frequen-
cies from 470 – 860 MHz. The high gain and broadband performance of this
device makes it ideal for large–signal, common source amplifier applications in
28 volt transmitter equipment.
•
Guaranteed CW Performance at 860 MHz, 28 Volts, Narrowband Fixture
Output Power – 60 Watts
Power Gain – 13 dB
Efficiency – 50%
470 – 860 MHz, 60 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETS
LIFETIME BUY
•
Typical Performance at 860 MHz, 28 Volts, Broadband Push–Pull Fixture
Output Power – 100 Watts (PEP)
Power Gain – 11.2 dB
D
Efficiency – 40%
IMD – –30 dBc
•
Excellent Thermal Stability
•
100% Tested for Load Mismatch Stress at All
Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz,
60 Watts CW
G
CASE 360B–04, STYLE 1
(MRF373)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Drain Current – Continuous
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
MRF373S
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
65
±20
7
173
1.33
– 65 to +150
200
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
MRF373S
MRF373
Symbol
R
θJC
R
θJC
Max
0.75
1
Unit
°C/W
°C/W
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 5
MOTOROLA
©
Motorola, Inc. 2001
RF DEVICE DATA
MRF373 MRF373S
1
LAST ORDER 31JUL04
S
CASE 360C–04, STYLE 1
(MRF373S)
LAST SHIP 31JAN05
RF Power
Field Effect Transistors
MRF373
MRF373S
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(V
GS
= 0, I
D
=1
µA)
Zero Gate Voltage Drain Current
(V
DS
= 28 V, V
GS
= 0)
Gate–Source Leakage Current
(V
GS
= 20 V, V
DS
= 0)
V
(BR)DSS
I
DSS
I
GSS
65
–
–
–
–
–
–
1
1
Vdc
µAdc
µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= 10 V, I
D
= 200
µA)
Gate Quiescent Voltage
(V
DS
= 28 V, I
D
= 100 mA)
Drain–Source On–Voltage
(V
GS
= 10 V, I
D
= 3 A)
Forward Transconductance
(V
DS
= 10 V, I
D
= 3 A)
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
–
2.2
3
4
0.6
2.9
4
5
0.8
–
Vdc
Vdc
Vdc
S
LIFETIME BUY
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
(V
DS
= 28 V, V
GS
= 0, f = 1 MHz)
C
iss
C
oss
C
rss
–
–
–
79
46
4
–
–
–
pF
pF
pF
Common Source Power Gain
(V
DD
= 28 V, P
out
= 60 W, I
DQ
= 200 mA, f = 860 MHz)
Drain Efficiency
(V
DD
= 28 V, P
out
= 60 W, I
DQ
= 200 mA, f = 860 MHz)
Load Mismatch
(V
DD
= 28 V, P
out
= 60 W, I
DQ
= 200 mA, f = 860 MHz,
Load VSWR at 5:1 at All Phase Angles)
G
ps
η
ψ
13
50
14.7
54
–
–
dB
%
No Degradation in Output Power
TYPICAL CHARACTERISTICS,
2 Tone Operation, Push Pull Configuration (MRF373S), Broadband Fixture
Common Source Power Gain
(V
DD
= 28 Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
Drain Efficiency
(V
DD
= 28 Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
Third Order Intermodulation Distortion
(V
DD
= 28 Vdc, P
out
= 100 W PEP, I
DQ
= 400 mA,
f1 = 860.0 MHz, f2 = 866 MHz)
G
ps
–
11.2
–
dB
η
–
40
–
%
IMD
–
–30
–
dBc
MRF373 MRF373S
2
MOTOROLA RF DEVICE DATA
LAST ORDER 31JUL04
FUNCTIONAL CHARACTERISTICS,
CW Operation
LAST SHIP 31JAN05
V
GG
R2
C15
C14
C13
R1
C10
C4
C1
Z7
RF
INPUT
Z1
C8
C6
C5
Z2
Z3
Z4
Z5
Z6
Z8
Z9
L1
C11
C12
V
DD
Z10
Z11
C7
Z12
RF
OUTPUT
C2
C3
C9
LIFETIME BUY
C1
C2
C3
C4, C5, C6
C7, C8
C9
C10, C13
C11
C12
C14
C15
L1
R1
R2
4.7 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
6.8 pF, B Case Chip Capacitor, ATC
10 pF, B Case Chip Capacitor, ATC
47 pF, B Case Chip Capacitor, ATC
0.2 pF, B Case Chip Capacitor, ATC
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2
mF,
50 V, Kemet P/N C1825C225
22
mF,
50 V, Kemet P/N T491D226K50AS
2) 1.0
mF,
50 V, Kemet P/N C1825C105
10
mF,
35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
1.2 kΩ, Vishay Dale Chip Resistor (1206)
12 kΩ, Vishay Dale Chip Resistor (1206)
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
(GX–0300–55), height 30 mils,
ε
r
= 2.55
Heatsink
Motorola P/N 95–11LDMOSKPS–1
LDMOS
m250
3″ x 5″ Bedstead
Insert
Motorola P/N 95–11LDMOSKPS–2
Insert for LDMOS
m250
3″ x 5″ Bedstead
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
2) H.H. Smith P/N SM–101
TO GATE
BIAS SUPPLY
R2
C14
C15
R1
C13
C4
C1
C2
C6
C5
C11
C10
L1
C3
C7
C12
TO DRAIN
BIAS SUPPLY
C8
C9
MRF373
Figure 2. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373)
MOTOROLA RF DEVICE DATA
MRF373 MRF373S
3
LAST ORDER 31JUL04
Figure 1. Single–Ended Narrowband Test Circuit Schematic (MRF373)
LAST SHIP 31JAN05
LIFETIME BUY
Figure 3. MRF373 Narrowband Test Fixture Photo
V
DD
R2
C20
C7
Z10
Z1
C10
C11
C9
C8
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z11
C1
Z12
L1
RF
OUTPUT
C21
C22
V
GG
C25
C24
C23
R1
RF
INPUT
C5
C2
C3
C4
C6
C1, C2
C3
C4, C11
C5, C10
C6
C7
C8
C9
C20, C23
C21
C24
C22
C25
L1
R1
R2
18 pF, B Case Chip Capacitor, ATC
12 pF, B Case Chip Capacitor, ATC
0.8 pF, B Case Chip Capacitor, ATC
68 pF, B Case Chip Capacitor, ATC
0.3 pF, B Case Chip Capacitor, ATC
15 pF, B Case Chip Capacitor, ATC
10 pF, B Case Chip Capacitor, ATC
1.8 pF, B Case Chip Capacitor, ATC
300 pF, B Case Chip Capacitor, ATC, Side Mounted
2) 2.2
mF,
100 V, Vishay P/N VJ3640Y225KXBAT
2) 1.0
mF,
50 V, Kemet P/N C1825C105
22
mF,
35 V, Kemet P/N T491D226K35AS
10
mF,
35 V, Kemet P/N T491D106K35AS
22 nH, Coilcraft P/N B07T
1.2 kΩ, Vishay Dale Chip Resistor (1206)
12 kΩ, Vishay Dale Chip Resistor (1206)
Connectors N–Type (female), M/A Com P/N 3052–1648–10
PCB
MRF373 Printed Circuit Board Rev 01, CuClad 250
(GX–0300–55), height 30 mils,
ε
r
= 2.55
(new PCB’s available from CMR)
Heatsink
Motorola P/N 95–11LDMOSKPS–1
LDMOS
m250
3″ x 5″ Bedstead
Insert
Motorola P/N 95–11LDMOSKPS–2S
Insert for LDMOS
m250S
3″ x 5″ Bedstead
End Plates 2) Motorola P/N 93–3MB–9, End Plate for
Type–N Connector
Banana Jack and Nut
2) Johnson P/N 108–0904–001
Brass Banana Jack
2) H.H. Smith P/N SM–101
Figure 4. Single–Ended Narrowband Test Circuit Schematic (MRF373S)
MRF373 MRF373S
4
MOTOROLA RF DEVICE DATA
LAST ORDER 31JUL04
Z13
Z14
Z15
Z16
LAST SHIP 31JAN05
TO GATE
BIAS SUPPLY
R2
C24
C25
R1
C23
C7
C1
C9
C8
C2
C21
C20
L1
C3
C4
C5
C22
TO DRAIN
BIAS SUPPLY
C11
C10
C6
LIFETIME BUY
MRF373S
Figure 5. Single–Ended Narrowband Test Circuit Layout
(Suitable for Use with MRF373S)
Figure 6. MRF373S Narrowband Test Circuit Photo
MOTOROLA RF DEVICE DATA
MRF373 MRF373S
5
LAST ORDER 31JUL04
LAST SHIP 31JAN05
测试/测量
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