SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF3104/D
The RF Line
Microwave Linear
Power Transistors
•
Designed for Class A, Common Emitter Linear Power Amplifiers.
•
Specified 20 Volt, 1.6 GHz Characteristics:
MRF3104
Output Power
Power Gain
0.5 W
10.5 dB
MRF3105
0.8 W
9 dB
MRF3106
1.6 W
8 dB
MRF3104
MRF3105
MRF3106
8.0–12 dB GAIN
1.55–1.65 GHz
MICROWAVE LINEAR
POWER TRANSISTORS
•
Low Parasitic Microwave Stripline Package
•
Gold Metalization for Improved Reliability
•
Diffused Ballast Resistors
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Emitter Voltage
Emitter–Base Voltage
Collector Current
MRF3104, MRF3105
MRF3106
Symbol
V
CEO
V
CES
V
EBO
I
C
T
j
T
stg
Value
22
50
3.5
0.4
0.8
200
–65 to +125
Unit
Vdc
Vdc
Vdc
Adc
°C
°C
CASE 305A–01, STYLE 1
(.204″ PILL)
Operating Junction Temperature
Storage Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case, DC
MRF3104
MRF3105
MRF3106
Symbol
R
θJC
(DC)
Max
40
35
22
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA, I
B
= 0)
Collector–Emitter Breakdown Voltage
(I
C
= 10 mA, V
BE
= 0)
Collector–Base Breakdown Voltage
(I
C
= 1 mA, I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 0.25 mA, I
C
= 0)
Collector Cutoff Current
(V
CB
= 28 V, I
E
= 0)
MRF3104, MRF3105
MRF3106
BV
CEO
BV
CES
BV
CBO
BV
EBO
I
CBO
22
50
45
3.5
—
—
—
—
—
—
—
—
—
—
—
—
0.25
0.5
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(V
CE
= 5.0 V, I
C
= 100 mA)
h
FE
20
35
120
—
(continued)
REV 6
1
ELECTRICAL CHARACTERISTICS — continued
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance (V
CB
= 28 V, I
E
= 0, f = 1.0 MHz)
MRF3104
MRF3105
MRF3106
C
OB
—
—
—
—
—
—
1.5
3.5
5.5
pF
FUNCTIONAL TESTS
Common Emitter Amplifier Gain
(V
CE
= 20 V, I
C
= 120 mA, P
out
= 0.5 W, f = 1.6 GHz)
(V
CE
= 20 V, I
C
= 120 mA, P
out
= 0.8 W, f = 1.6 GHz)
(V
CE
= 20 V, I
C
= 240 mA, P
out
= 1.6 W, f = 1.6 GHz)
Output Load Mismatch
(V
CE
= 20 V, I
C
= 120 mA, P
out
= 0.5 W, f = 1.6 GHz)
(V
CE
= 20 V, I
C
= 120 mA, P
out
= 0.8 W, f = 1.6 GHz)
(V
CE
= 20 V, I
C
= 240 mA, P
out
= 1.6 W, f = 1.6 GHz)
Gain Linearity
(V
CE
= 20 V, I
C
= 120 mA, f = 1.6 GHz,
P
o1
= 0.5 W, P
o2
= 0.5 mW)
(V
CE
= 20 V, I
C
= 120 mA, f = 1.6 GHz,
P
o1
= 0.8 W, P
o2
= 0.5 mW)
(V
CE
= 20 V, I
C
= 240 mA, f = 1.6 GHz,
P
o1
= 1.6 W, P
o2
= 0.5 mW)
Gpe
MRF3104
MRF3105
MRF3106
MRF3104
MRF3105
MRF3106
L
G
MRF3104
MRF3105
MRF3106
—
—
—
—
—
—
–0.2 to 1.0
–0.2 to 1.0
–0.2 to 1.0
10.5
9.0
8.0
11.5
10.0
9.0
—
—
—
—
—
—
dB
dB
No Degradation in
Output Power
TYPICAL CHARACTERISTICS
MRF3104
1.5
Freq = 1.6 GHz, I
C
= 120 mA
V
CE
= 20 V
15 V
Po, OUTPUT POWER (W)
1.0
10 V
0.5
0.0
0
100
P
in
, INPUT POWER (mW)
200
Figure 1. Output Power versus Input Power
V
CE
(V)
20
I
C
(mA)
120
f
(MHz)
1550
1575
1600
1625
1650
S11
Mag
0.75
0.76
0.76
0.76
0.76
Deg
123
123
122
122
121
Mag
1.97
1.93
1.91
1.80
1.85
S21
Deg
21
20
19
18
17
Mag
0.08
0.09
0.09
0.09
0.09
S12
Deg
44
44
43
42
42
Mag
0.31
0.32
0.32
0.32
0.33
S22
Deg
–113
–115
–116
–117
–119
Table 1. Common Emitter S–Parameters
REV 6
2
TYPICAL CHARACTERISTICS — continued
MRF3105
1.2
1.0
Po, OUTPUT POWER (W)
0.8
0.6
0.4
0.2
0.0
0
100
P
in
, INPUT POWER (mW)
200
Freq = 1.6 GHz, I
C
= 120 mA
V
CE
= 20 V
15 V
10 V
Figure 2. Output Power versus Input Power
S11
Mag
0.75
0.75
0.75
0.75
0.75
Deg
139
138
137
137
136
Mag
1.49
1.46
1.44
1.42
1.39
S21
Deg
19
18
17
15
14
Mag
0.09
0.10
0.10
0.10
0.10
S12
Deg
44
43
43
43
42
Mag
0.42
0.42
0.43
0.43
0.44
S22
Deg
–124
–126
–127
–129
–130
V
CE
(V)
20
I
C
(mA)
120
f
(MHz)
1550
1575
1600
1625
1650
Table 2. Common Emitter S–Parameters
MRF3106
3
Freq = 1.6 GHz, I
C
= 240 mA
V
CE
= 20 V
Po, OUTPUT POWER (W)
2
15 V
10 V
1
0
0
100
200
P
in
, INPUT POWER (mW)
300
400
Figure 3. Output Power versus Input Power
S11
Mag
0.97
0.97
0.96
0.96
0.95
Deg
145
143
142
140
139
Mag
0.78
0.78
0.77
0.76
0.75
S21
Deg
11
10
9
8
7
Mag
0.20
0.17
0.16
0.14
0.12
S12
Deg
–130
–104
–104
–104
–104
Mag
0.56
0.56
0.56
0.56
0.56
S22
Deg
169
168
166
165
164
V
CE
(V)
20
I
C
(mA)
240
f
(MHz)
1550
1575
1600
1625
1650
Table 3. Common Emitter S–Parameters
REV 6
3
PACKAGE DIMENSIONS
M
D
1
4
2
3
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
C
D
F
H
J
K
M
STYLE 1:
PIN 1.
2.
3.
4.
EMITTER
BASE
EMITTER
COLLECTOR
INCHES
MIN
MAX
0.200
0.220
0.095
0.130
0.055
0.065
0.025
0.035
0.040
0.050
0.003
0.007
0.435
---
45
_
REF
MILLIMETERS
MIN
MAX
5.08
5.59
2.41
3.30
1.40
1.65
0.64
0.89
1.02
1.27
0.08
0.18
11.05
---
45
_
REF
F
J
A
C
H
CASE 305A–01
ISSUE A
Specifications subject to change without notice.
n
North America:
Tel. (800) 366-2266, Fax (800) 618-8883
n
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
n
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
REV 6
4
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