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MJE2955TAN: 产品描述10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN; 产品类别分立半导体晶体管; 文件大小357KB，共59页; 制造商ON Semiconductor(安森美); 官网地址http://www.onsemi.cn

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MJE2955TAN概述

10A, 60V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

MJE2955TAN规格参数

参数名称	属性值
是否Rohs认证	不符合
零件包装代码	TO-220AB
包装说明	PLASTIC, TO-220AB, 3 PIN
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
外壳连接	COLLECTOR
最大集电极电流 (IC)	10 A
集电极-发射极最大电压	60 V
配置	SINGLE
最小直流电流增益 (hFE)	5
JESD-30 代码	R-PSFM-T3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	PNP
认证状态	Not Qualified
表面贴装	NO
端子面层	TIN LEAD
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	2 MHz
Base Number Matches	1

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Complementary Silicon Plastic

Power Transistors

. . . designed for use in general–purpose amplifier and switching applications.

•

DC Current Gain Specified to 10 Amperes

•

High Current Gain — Bandwidth Product —

fT = 2.0 MHz (Min) @ IC = 500 mAdc

MJE2955T *

NPN

MJE3055T *

*Motorola Preferred Device

PNP

MAXIMUM RATINGS

Rating

Symbol

VCEO

VCB

VEB

Value

Unit

Vdc

Adc

10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60 VOLTS

75 WATTS

IC, COLLECTOR CURRENT (AMP)

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Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

Base Current

5.0

6.0

Total Power Dissipation @ TC = 25

Derate above 25

MJE3055T, MJE2955T

Operating and Storage Junction

Temperature Range

PD†

Watts

0.6

TJ, Tstg

– 55 to + 150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

CASE 221A–06

TO–220AB

Thermal Resistance, Junction to Case

1.67

C/W

†Safe Area Curves are indicated by Figure 1. Both limits are applicable and must be observed.

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

0.2

0.1

5.0

5.0 ms

1.0 ms

100

µs

TJ = 150°C

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMALLY LIMITED

TC = 25°C (D = 0.1)

7.0

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

50 60

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 1 is based on T J(pk) = 150

C. TC is vari-

able depending on conditions. Second breakdown pulse lim-

its are valid for duty cycles to 10% provided T J(pk)

150

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown. (See AN415A)

Figure 1. Active–Region Safe Operating Area

Preferred

devices are Motorola recommended choices for future use and best overall value.

REV 1

3–628

Motorola Bipolar Power Transistor Device Data

MJE2955TAN

MJE2955TAN概述

MJE2955TAN规格参数

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