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MJE16106

产品描述8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, CASE 221A-06, 3 PIN
产品类别分立半导体    晶体管   
文件大小488KB,共65页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
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MJE16106概述

8A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB, PLASTIC, CASE 221A-06, 3 PIN

MJE16106规格参数

参数名称属性值
是否Rohs认证不符合
零件包装代码TO-220AB
包装说明FLANGE MOUNT, R-PSFM-T3
针数3
制造商包装代码CASE 221A-06
Reach Compliance Codecompliant
ECCN代码EAR99
Is SamacsysN
外壳连接COLLECTOR
最大集电极电流 (IC)8 A
集电极-发射极最大电压400 V
配置SINGLE
最小直流电流增益 (hFE)6
JEDEC-95代码TO-220AB
JESD-30 代码R-PSFM-T3
JESD-609代码e0
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)225
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon Power Transistor
Switchmode Bridge Series
. . . specifically designed for use in half bridge and full bridge off line converters.
Excellent Dynamic Saturation Characteristics
Rugged RBSOA Capability
Collector–Emitter Sustaining Voltage — VCEO(sus) — 400 V
Collector–Emitter Breakdown — V(BR)CES — 650 V
State–of–Art Bipolar Power Transistor Design
Fast Inductive Switching:
tfi = 30 ns (Typ) @ 100
_
C
tc = 65 ns (Typ) @ 100
_
C
tsv = 1.3
µs
(Typ) @ 100
_
C
Ultrafast FBSOA Specified
100
_
C Performance Specified for:
RBSOA
Inductive Load Switching
Saturation Voltages
Leakages
Designer's
Data Sheet
MJE16106
POWER TRANSISTORS
8 AMPERES
400 VOLTS
100 AND 125 WATTS
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MAXIMUM RATINGS
Rating
Symbol
Value
400
650
6
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Sustaining Voltage
VCEO(sus)
VCES
Collector–Emitter Breakdown Voltage
Emitter–Base Voltage
VEBO
IC
ICM
IB
IBM
PD
Collector Current — Continuous
— Pulsed (1)
Base Current — Continuous
— Pulsed (1)
8
16
6
12
Total Power Dissipation @ TC = 25
_
C
@ TC = 100
_
C
Derated above 25
_
C
Operating and Storage Temperature
100
40
0.8
Watts
W/
_
C
TJ, Tstg
– 55 to 150
CASE 221A–06
TO–220AB
_
C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
Maximum Lead Temperature for
Soldering Purposes 1/8″ from
Case for 5 Seconds
R
θJC
TL
1.25
275
_
C/W
_
C
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v
10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
REV 1
3–696
Motorola Bipolar Power Transistor Device Data
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