MJE18008G, MJF18008G
SWITCHMODE
NPN Bipolar Power Transistor
For Switching Power Supply Applications
The MJE/MJF18008G have an applications specific state−of−the−art
die designed for use in 220 V line−operated SWITCHMODE Power
supplies and electronic light ballasts.
Features
♦
http://onsemi.com
•
Improved Efficiency Due to Low Base Drive Requirements:
•
•
•
•
High and Flat DC Current Gain h
FE
♦
Fast Switching
♦
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
Tight Parametric Distributions are Consistent Lot−to−Lot
Two Package Choices: Standard TO−220 or Isolated TO−220
MJF18008, Case 221D, is UL Recognized at 3500 V
RMS
: File
#E69369
These Devices are Pb−Free and are RoHS Compliant*
Rating
Symbol
V
CEO
V
CES
V
EBO
I
C
I
CM
I
B
I
BM
V
ISOL
Value
450
1000
9.0
8.0
16
4.0
8.0
MJF18008
4500
3500
1500
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
Adc
V
1
2
3
POWER TRANSISTOR
8.0 AMPERES
1000 VOLTS
45 and 125 WATTS
COLLECTOR
2,4
1
BASE
3
EMITTER
MAXIMUM RATINGS
Collector−Emitter Sustaining Voltage
Collector−Base Breakdown Voltage
Emitter−Base Voltage
Collector Current
Collector Current
Base Current
Base Current
−
Continuous
−
Peak (Note 1)
−
Continuous
−
Peak (Note 1)
MARKING
DIAGRAMS
4
MJE18008G
AYWW
RMS Isolation Voltage (Note 2)
Test No. 1 Per Figure 22a
Test No. 1 Per Figure 22b
Test No. 1 Per Figure 22c
(for 1 sec, R.H. < 30%, T
A
= 25_C)
Total Device Dissipation @ T
C
= 25_C
MJE18008
MJF18008
Derate above 25°C
MJE18008
MJF18008
Operating and Storage Temperature
TO−220AB
CASE 221A−09
STYLE 1
P
D
125
45
1.0
0.36
−65
to 150
W
W/_C
T
J
, T
stg
_C
1
2
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
3
= Pb−Free Package
= Assembly Location
= Year
= Work Week
MJF18008G
AYWW
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
MJE18008
MJF18008
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
Symbol
R
qJC
Max
1.0
2.78
62.5
260
Unit
_C/W
G
A
Y
WW
R
qJA
T
L
_C/W
_C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle
≤
10%.
2. Proper strike and creepage distance must be provided.
©
Semiconductor Components Industries, LLC, 2013
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJE18008/D
August, 2013
−
Rev. 9
1
MJE18008G, MJF18008G
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (I
C
= 100 mA, L = 25 mH)
Collector Cutoff Current (V
CE
= Rated V
CEO
, I
B
= 0)
Collector Cutoff Current (V
CE
= Rated V
CES
, V
EB
= 0)
Collector Cutoff Current
(V
CE
= 800 V, V
EB
= 0)
Emitter Cutoff Current (V
EB
= 9.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(T
C
= 125_C)
(T
C
= 125_C)
V
CEO(sus)
I
CEO
I
CES
450
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
100
100
500
100
100
Vdc
mAdc
mAdc
Symbol
Min
Typ
Max
Unit
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Î Î Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter Saturation Voltage (I
C
= 2.0 Adc, I
B
= 0.2 Adc)
Base−Emitter Saturation Voltage
(I
C
= 4.5 Adc, I
B
= 0.9 Adc)
Collector−Emitter Saturation Voltage
(I
C
= 2.0 Adc, I
B
= 0.2 Adc)
(I
C
= 4.5 Adc, I
B
= 0.9 Adc)
V
BE(sat)
0.82
0.92
1.1
1.25
0.6
0.65
0.7
0.8
34
−
−
−
−
−
−
−
Vdc
Vdc
V
CE(sat)
(T
C
= 125_C)
(T
C
= 125_C)
0.3
0.3
0.35
0.4
−
28
9.0
8.0
15
16
20
13
DC Current Gain (I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
DC Current Gain
(I
C
= 4.5 Adc, V
CE
= 1.0 Vdc)
DC Current Gain
(I
C
= 2.0 Adc, V
CE
= 1.0 Vdc)
(T
C
= 125_C)
(T
C
= 125_C)
(T
C
= 125_C)
h
FE
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
14
−
6.0
5.0
11
11
10
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth (I
C
= 0.5 Adc, V
CE
= 10 Vdc, f = 1.0 MHz)
Output Capacitance (V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance (V
EB
= 8.0 V)
Dynamic Saturation Voltage:
Determined 1.0
ms
and
3.0
ms
respectively after
rising I
B1
reaches 90% of
final I
B1
(see Figure 18)
f
T
MHz
pF
pF
C
ob
C
ib
100
150
−
−
−
−
−
−
−
−
1750
5.5
11.5
3.5
6.5
2500
(I
C
= 2.0 Adc
I
B1
= 200 mAdc
V
CC
= 300 V)
(I
C
= 5.0 Adc
I
B1
= 1.0 Adc
V
CC
= 300 V)
1.0
ms
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
V
CE(dsat)
Vdc
3.0
ms
1.0
ms
3.0
ms
11.5
14.5
2.4
9.0
SWITCHING CHARACTERISTICS: Resistive Load
(D.C.
v
10%, Pulse Width = 20
ms)
Turn−On Time
Turn−Off Time
(I
C
= 2.0 Adc, I
B1
= 0.2 Adc,
I
B2
= 1.0 Adc, V
CC
= 300 V)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
t
on
t
off
200
190
1.2
1.5
300
−
2.5
−
ns
ms
Turn−On Time
Turn−Off Time
(I
C
= 4.5 Adc, I
B1
= 0.9 Adc,
I
B2
= 2.25 Adc, V
CC
= 300 V)
t
on
t
off
100
250
1.6
2.0
180
−
2.5
−
ns
ms
SWITCHING CHARACTERISTICS: Inductive Load
(V
clamp
= 300 V, V
CC
= 15 V, L = 200
mH)
Fall Time
(I
C
= 2.0 Adc, I
B1
= 0.2 Adc,
I
B2
= 1.0 Adc)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
(T
C
= 125°C)
t
fi
100
120
1.5
1.9
180
−
ns
ms
Storage Time
t
si
t
c
2.75
−
350
−
150
−
3.2
−
Crossover Time
Fall Time
250
230
ns
ns
ms
(I
C
= 4.5 Adc, I
B1
= 0.9 Adc,
I
B2
= 2.25 Adc)
t
fi
85
135
2.0
2.6
Storage Time
t
si
t
c
Crossover Time
210
250
300
−
ns
3. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
v
10%.
4. Proper strike and creepage distance must be provided.
I
EBO
mAdc
http://onsemi.com
2
MJE18008G, MJF18008G
TYPICAL STATIC CHARACTERISTICS
100
V
CE
= 1 V
h FE , DC CURRENT GAIN
100
V
CE
= 5 V
h FE , DC CURRENT GAIN
T
J
= 125°C
T
J
= 25°C
10
T
J
= - 20°C
T
J
= 125°C
T
J
= 25°C
10
T
J
= - 20°C
1
0.01
0.1
1
10
1
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
Figure 1. DC Current Gain @ 1 Volt
Figure 2. DC Current Gain @ 5 Volts
2
T
J
= 25°C
V CE , VOLTAGE (VOLTS)
V CE , VOLTAGE (VOLTS)
1.5
I
C
= 1 A
3A
5A
8 A 10 A
10
1
1
0.1
I
C
/I
B
= 10
0.5
I
C
/I
B
= 5
0
0.01
0.01
0.01
T
J
= 25°C
T
J
= 125°C
0.1
1
10
I
C
COLLECTOR CURRENT (AMPS)
0.1
1
10
I
B
, BASE CURRENT (AMPS)
Figure 3. Collector Saturation Region
Figure 4. Collector−Emitter Saturation Voltage
1.3
1.2
V BE , VOLTAGE (VOLTS)
1.1
10000
C
ib
1000
C, CAPACITANCE (pF)
T
J
= 25°C
f = 1 MHz
1
0.9
0.8
0.7 T
J
= 25°C
0.6
0.5 T
J
= 125°C
0.4
0.01
0.1
1
I
C
/I
B
= 5
I
C
/I
B
= 10
10
100
C
ob
10
1
1
10
100
1000
I
C
, COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Base−Emitter Saturation Region
Figure 6. Capacitance
http://onsemi.com
3
MJE18008G, MJF18008G
TYPICAL SWITCHING CHARACTERISTICS
(I
B2
= I
C
/2 for all switching)
1500
I
B(off)
= I
C
/2
V
CC
= 300 V
PW = 20
ms
1000
t, TIME (ns)
I
C
/I
B
= 5
I
C
/I
B
= 10
500
t, TIME (ns)
T
J
= 125°C
T
J
= 25°C
4500
4000
3500
3000
2500
2000 I
C
/I
B
= 10
1500
1000
500
0
0
1
2
3
4
5
6
7
8
I
C
, COLLECTOR CURRENT (AMPS)
0
1
2
3
4
5
6
7
8
I
C
, COLLECTOR CURRENT (AMPS)
I
C
/I
B
= 5
T
J
= 25°C
T
J
= 125°C
I
B(off)
= I
C
/2
V
CC
= 300 V
PW = 20
ms
Figure 7. Resistive Switching, t
on
Figure 8. Resistive Switching, t
off
3500
3000
2500
t, TIME (ns)
2000
1500
1000
500
0
1
2
T
J
= 25°C
T
J
= 125°C
3
4
I
C
/I
B
= 5
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
5000
4500
4000
t si , STORAGE TIME (ns)
3500
3000
2500
2000
1500
1000
I
C
/I
B
= 10
5
6
7
8
500
0
3
4
5
6
I
C
= 4.5 A
7
8
9
10
11
12
13
14
15
h
FE
, FORCED GAIN
I
C
= 2 A
T
J
= 25°C
T
J
= 125°C
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
I
C
COLLECTOR CURRENT (AMPS)
Figure 9. Inductive Storage Time, t
si
Figure 10. Inductive Storage Time, t
si
(h
FE
)
400
350
300
t, TIME (ns)
250
200
150
100
50
0
1
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
2
3
4
5
6
I
C
, COLLECTOR CURRENT (AMPS)
t
fi
t
c
t, TIME (ns)
300
T
J
= 25°C
T
J
= 125°C
250
t
fi
t
c
150
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
200
100
T
J
= 25°C
T
J
= 125°C
7
8
50
1
2
3
4
5
6
7
8
I
C
, COLLECTOR CURRENT (AMPS)
Figure 11. Inductive Switching, t
c
and t
fi
I
C
/I
B
= 5
http://onsemi.com
4
Figure 12. Inductive Switching, t
c
and t
fi
I
C
/I
B
= 10
MJE18008G, MJF18008G
TYPICAL SWITCHING CHARACTERISTICS
(I
B2
= I
C
/2 for all switching)
160
150
140
t fi , FALL TIME (ns)
130
120
110
100
90
80
70
60
3
4
5
T
J
= 25°C
T
J
= 125°C
6
7
8
9
10
11
12
13
14
15
h
FE
, FORCED GAIN
I
C
= 4.5 A
I
C
= 2 A
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
400
350
TC , CROSSOVER TIME (ns)
300
250
200
150
100
50
3
4
5
I
C
= 4.5 A
T
J
= 25°C
T
J
= 125°C
6
7
8
9
10
11
12
13
14
15
h
FE
, FORCED GAIN
I
C
= 2 A
I
B(off)
= I
C
/2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200
mH
Figure 13. Inductive Fall Time
Figure 14. Inductive Crossover Time
GUARANTEED SAFE OPERATING AREA INFORMATION
100
DC (MJE18008)
I C , COLLECTOR CURRENT (AMPS)
10
EXTENDED
SOA
1
DC (MJF18008)
0.1
I C , COLLECTOR CURRENT (AMPS)
5 ms
1 ms
10
ms
1
ms
9
8
7
6
5
4
3
2
1
0
0
-5V
V
BE(off)
= 0 V
-1, 5 V
T
C
≤
125°C
I
C
/I
B
≥
4
L
C
= 500
mH
0.01
10
100
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000
600
1000
200
800
400
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 15. Forward Bias Safe Operating Area
1,0
POWER DERATING FACTOR
SECOND BREAKDOWN
DERATING
Figure 16. Reverse Bias Switching Safe
Operating Area
0,8
0,6
0,4
THERMAL DERATING
0,2
0,0
20
40
60
80
100
120
140
160
T
C
, CASE TEMPERATURE (°C)
Figure 17. Forward Bias Power Derating
There are two limitations on the power handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
−
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 15 is
based on T
C
= 25°C; T
J(pk)
is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T
C
> 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown in
Figure 15 may be found at any case temperature by using the
appropriate curve on Figure 17. T
J(pk)
may be calculated
from the data in Figure 20 and 21. At any case temperatures,
thermal limitations will reduce the power that can be handled
to values less than the limitations imposed by second
breakdown. For inductive loads, high voltage and current
must be sustained simultaneously during turn−off with the
base−to−emitter junction reverse−biased. The safe level is
specified as a reverse−biased safe operating area (Figure 16).
This rating is verified under clamped conditions so that the
device is never subjected to an avalanche mode.
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