2N3866(A)
Qualified Levels:
JAN, JANTX, JANTXV
and JANS
Compliant
NPN Silicon High-Frequency Transistor
Qualified per MIL-PRF-19500/398
DESCRIPTION
This 2N3866(A) silicon VHF-UHF amplifier transistor is military qualified up to the JANS level
for high-reliability applications. It is also available in a low profile UB package.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
JEDEC registered 2N3866 number
JAN, JANTX, JANTXV and JANS qualifications also available per MIL-PRF-19500/398
RoHS compliant
(formerly TO-39)
TO-205AD
Package
Also available in:
APPLICATIONS / BENEFITS
UB package
(surface mount)
2N3866(A)UB
•
•
•
Short leaded TO-205AD package
Lightweight
Military and other high-reliability applications
MAXIMUM RATINGS
@ T
A
= +25 °C unless otherwise noted
Parameters / Test Conditions
Junction & Storage Temperature
Thermal Resistance Junction-to-Case
Thermal Resistance Junction-to-Ambient
Collector – Emitter Voltage
Collector – Base Voltage
Emitter - Base Voltage
(1)
(1)
Total Power Dissipation
@ T
A
= +25 ºC
(2)
@ T
C
= +25 ºC
Collector Current
Notes:
1. Derated linearly 5.71 mW/°C for T
A
> +25 °C
2. Derated at 16.6 mW/°C for T
C
> +25 °C
Symbol
T
J
, T
stg
R
ӨJC
R
ӨJA
V
CEO
V
CBO
V
EBO
P
T
I
C
Value
-65 to +200
60
175
30
60
3.5
1.0
2.9
0.4
Unit
°C
ºC/W
ºC/W
V
V
V
W
A
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0175, Rev. 2 (8/30/13)
©2013 Microsemi Corporation
Page 1 of 4
2N3866(A)
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Hermetically sealed, kovar base, nickel cap
TERMINALS: Gold plate, solder dip (Sn63/Pb37) available upon request. NOTE: Solder dip will eliminate RoHS compliance.
MARKING: Part number, date code, manufacturer’s ID and serial number
POLARITY: NPN
WEIGHT: Approximately 1.064 grams
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial
2N3866
(A)
Forward Current Transfer
Ratio selection option
JEDEC type number
Symbol
I
B
I
C
V
BE
V
CB
V
CBO
V
CE
V
CEO
V
CC
V
EBO
SYMBOLS & DEFINITIONS
Definition
Base current: The value of the dc current into the base terminal.
Collector current: The value of the dc current into the collector terminal.
Base-emitter voltage: The dc voltage between the base and the emitter.
Collector-base voltage: The dc voltage between the collector and the base.
Collector-base voltage, base open: The voltage between the collector and base terminals when the emitter terminal is
open-circuited.
Collector-emitter voltage: The dc voltage between the collector and the emitter.
Collector-emitter voltage, base open: The voltage between the collector and the emitter terminals when the base
terminal is open-circuited.
Collector-supply voltage: The supply voltage applied to a circuit connected to the collector.
Emitter-base voltage, collector open: The voltage between the emitter and base terminals with the collector terminal
open-circuited.
T4-LDS-0175, Rev. 2 (8/30/13)
©2013 Microsemi Corporation
Page 2 of 4
2N3866(A)
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 5 mA
Collector-Base Breakdown Voltage
I
C
= 100
µA
Emitter-Base Breakdown Voltage
I
E
= 100
µA
Collector-Emitter Cutoff Current
V
CE
= 28 V
Collector-Emitter Cutoff Current
V
CE
= 55 V
ON CHARACTERISTICS
(1)
Forward-Current Transfer Ratio
I
C
= 50 mA, V
CE
= 5.0 V
I
C
= 360 mA, V
CE
= 5.0 V
Symbol
Min
Max
Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CEO
I
CES1
30
60
3.5
20
100
V
V
V
µA
µA
2N3866
2N3866A
2N3866
2N3866A
h
FE
15
25
5
8
200
200
Collector-Emitter Saturation Voltage
I
C
= 100 mA, I
B
= 10 mA
Collector-Emitter Cutoff Current – High Temp Operation
V
CE
= 55 V,
T
A
= +150 ºC
Forward-Current Transfer Ratio –
Low Temperature Operation
2N3866
V
CE
= 5.0 V, I
C
= 50 mA,
T
A
= -55 ºC
2N3866A
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
I
C
= 50 mA, V
CE
= 15 V, f = 200 MHz
Output Capacitance
V
CB
= 28 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
POWER OUTPUT CHARACTERISTICS
Power Output
V
CC
= 28 V; P
in
= 0.15 W; f = 400 MHz *
V
CC
= 28 V; P
in
= 0.075 W; f = 400 MHz *
* See Figure 4 on MIL-PRF-19500/398
Collector Efficiency
V
CC
= 28 V; P
in
= 0.15 W; f = 400 MHz
V
CC
= 28 V; P
in
= 0.075 W; f = 400 MHz
Clamp Inductive
Collector-Emitter Breakdown Voltage
V
BE
= -1.5 V, I
C
= 40 mA
(1) Pulse Test: pulse width = 300
µs,
duty cycle
≤
2.0%
V
CE(sat)
I
CES2
h
FE3
7
12
1.0
2.0
V
mA
2N3866
2N3866A
|h
FE
|
C
obo
2.5
4.0
8.0
7.5
3.5
pF
P
1out
P
2out
n1
n2
1.0
0.5
45
40
2.0
W
%
V
(BR)CEX
55
V
T4-LDS-0175, Rev. 2 (8/30/13)
©2013 Microsemi Corporation
Page 3 of 4
2N3866(A)
PACKAGE DIMENSIONS
Ltr
CD
CH
HD
h
j
k
LD
α
LL
LC
LU
L1
L2
P
Q
r
α
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
13.
Dimensions
Inch
Millimeters
Min
Max
Min
Max
0.305
0.240
0.335
0.009
0.028
0.029
0.016
0.500
0.016
0.335
0.260
0.370
0.041
0.034
0.045
0.021
0.750
0.019
0.050
7.75
6.10
8.51
0.23
0.71
0.74
0.41
12.7
0.41
8.51
6.60
9.40
1.04
0.86
1.14
0.53
19.05
Notes
3
3, 4
8, 9
7
8, 9
8, 9
8, 9
7
5
10
7
0.200 TP
5.08 TP
0.48
1.27
-
0.250
0.100
-
6.35
2.54
-
-
0.030
-
-
0.76
-
-
0.010
45° TP
-
-
0.25
45° TP
Dimensions are in inches.
Millimeters are given for information only.
Beyond r (radius) maximum, TL shall be held for a minimum length of 0.011 inch (0.28 mm).
Dimension TL measured from maximum HD.
Body contour optional within zone defined by HD, CD, and Q.
CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
Leads at gauge plane 0.054 +0.001 -0.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18
mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC.
Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1
and beyond LL minimum.
All three leads.
The collector shall be internally connected to the case.
Dimension r (radius) applies to both inside corners of tab.
In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
Lead 1 = emitter, lead 2 = base, lead 3 = collector.
T4-LDS-0175, Rev. 2 (8/30/13)
©2013 Microsemi Corporation
Page 4 of 4
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
