MII 300-12A4
MID 300-12A4
MDI 300-12A4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII 300-12A4
T1
8
9
T2
11
10
2
D2
11
10
2
2
1
T2
D12
1
3
D1
D1
8
9
D2
1
I
C25
= 330 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.2 V
MID 300-12A4
3
T1
D11
2
1
MDI 300-12A4
3
3
11
10
9
8
E72873
IGBTs T1 - T2
Symbol
V
CES
V
GES
I
C25
I
C80
I
CM
V
CEK
t
SC
(SCSOA)
P
tot
Symbol
T
C
= 25°C
T
C
= 80°C
V
GE
=
±
15 V; R
G
= 3.3
Ω; T
VJ
= 125°C
RBSOA
Clamped inductive load; L = 100 µH
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 3.3
Ω
T
VJ
= 125°C; non-repetitive
T
C
= 25°C
Conditions
Conditions
T
VJ
= 25°C to 150°C
Maximum Ratings
1200
±
20
330
220
400
V
CES
10
1380
V
V
A
A
A
µs
W
Features
• NPT IGBT technology
• low switching losses
• switching frequency up to 30 kHz
• square RBSOA, no latch up
• high short circuit capability
• positive temperature coefficient for
easy parallelling
• MOS input, voltage controlled
• ultra fast free wheeling diodes
• package with DCB ceramic base plate
• isolation voltage 4800 V
• UL registered E72873
Advantages
• space and weight savings
• reduced protection circuits
Applications
• AC and DC motor control
• AC servo and robot drives
• power supplies
• welding inverters
Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min.
typ.
2.2
4.5
T
VJ
= 25°C
T
VJ
= 125°C
20
±800
100
60
600
90
32
29
13
2
1
0.09
0.18
max.
2.7
6.5
13
V
V
mA
mA
nA
ns
ns
ns
ns
mJ
mJ
nF
nF
nF
K/W
K/W
V
CE(sat)
V
GE(th)
I
CES
I
GES
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
R
thJC
R
thJH
I
C
= 200 A; V
GE
= 15 V
I
C
= 8 mA; V
GE
= V
CE
V
CE
= V
CES
; V
GE
= 0 V
V
CE
= 0 V; V
GE
=
±
20 V
Inductive load
V
CE
= 600 V; I
C
= 200 A
V
GE
= ±15 V; R
G
= 3.3
Ω
T
VJ
= 125°C
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
(per IGBT)
with heatsink compound
IXYS reserves the right to change limits, test conditions and dimensions.
20090812a
© 2009 IXYS All rights reserved
1-4
MII 300-12A4
MID 300-12A4
MDI 300-12A4
Free wheeling diodes D1 - D2 / D11 - D12
Symbol
I
F25
I
F80
Symbol
V
F
I
RM
t
rr
R
thJC
R
thJH
Module
Symbol
T
VJ
T
stg
V
ISO
M
d
Symbol
Conditions
operating
I
ISOL
< 1 mA; 50/60 Hz
Mounting torque (module, M6)
(terminal, M5)
Conditions
Maximum Ratings
-40...+150
-40...+150
4000
2.25 - 2.75
2.5 - 3.7
°C
°C
V~
Nm
Nm
Conditions
T
C
= 25°C
T
C
= 80°C
Conditions
I
F
= 300 A; V
GE
= 0 V;
T
VJ
= 25°C
T
VJ
= 125°C
Maximum Ratings
450
280
A
A
Equivalent Circuits for Simulation
Conduction
Characteristic Values
min.
typ.
2.2
1.7
180
200
0.15
0.3
max.
2.5
V
V
A
ns
K/W
K/W
I
V
0
R
0
I
F
= 200 A; di
F
/dt = -1800 A/µs;
T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V;
(per IGBT)
with heatsink compound
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.3 V; R
0
= 6.2 mΩ
Free wheeling diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 2.4
mΩ
Characteristic Values
min.
typ.
max.
10
9.6
250
d
S
d
A
Weight
Creepage distance on surface
Strike distance in air
mm
mm
g
Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
20090812a
© 2009 IXYS All rights reserved
2-4
MII 300-12A4
MID 300-12A4
MDI 300-12A4
500
A
I
C
T
J
= 25°C
500
V
GE
=17V
15V
13V
400
300
200
100
0
0.0
A
400
I
C
300
200
T
J
= 125°C
V
GE
=17V
15V
13V
11V
11V
9V
9V
100
0
0.0
0.5
1.0
1.5
2.0
2.5
V
CE
3.0
V
0.5
1.0
1.5
2.0
2.5 3.0
V
CE
3.5
V
Fig. 1
Typ. output characteristics
Fig. 2
Typ. output characteristics
500
V
CE
= 20V
A
400
I
C
T
J
= 25°C
900
A
800
700
I
F
600
500
400
300
200
100
T
J
= 125°C
T
J
= 25°C
300
200
100
0
5
6
7
8
9
10
V
GE
11
V
0
0
1
2
V
F
3
V
4
Fig. 3
Typ. transfer characteristics
Fig. 4
Typ. forward characteristics of
free wheeling diode
20
V
V
GE
15
120
V
CE
= 600V
I
C
= 200A
300
ns
t
rr
A
I
RM
t
rr
80
200
10
40
5
I
RM
T
J
= 125°C
V
R
= 600V
I
F
= 200A
100
0
0
200
400
600
800
Q
G
1000
nC
0
300-12
0
200
400
600
A/µs
800
-di/dt
1000
0
Fig. 5
Typ. turn on gate charge
Fig. 6
Typ. turn off characteristics of
free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
20090812a
© 2009 IXYS All rights reserved
3-4
MII 300-12A4
MID 300-12A4
MDI 300-12A4
800
t
d(off)
ns
600
t
E
off
V
CE
= 600V
V
GE
= ±15V
R
G
= 3.3Ω
T
J
= 125°C
80
mJ
E
on
E
on
160
ns
120
t
80
mJ
E
off
60
60
t
d(on)
t
r
V
CE
= 600V
V
GE
= ±15V
R
G
= 3.3Ω
T
J
= 125°C
40
80
40
400
20
40
20
200
0
0
100
200
300
I
C
0
400
A
500
0
t
f
0
100
200
300
I
C
400
0
A 500
Fig. 7
Typ. turn on energy and switching
Fig. 8
Typ. turn off energy and switching
times versus collector current
100
mJ
80
E
on
V
CE
= 600V
V
GE
= ±15V
I
C
= 200A
T
J
= 125°C
E
on
400
ns
320
t
240
160
80
E
off
50
mJ
40
30
20
10
0
60
40
20
0
t
d(on)
t
r
V
CE
= 600V
V
GE
= ±15V
I
C
= 200A
T
J
= 125°C
2000
E
off
t
d(off)
ns
1600
t
1200
800
400
0
24
Ω
28
t
f
0
4
8
12
16
20
R
G
0
24
Ω
28
0
4
8
12
16
R
G
20
Fig. 9
Typ. turn on energy and switching
times versus gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
500
A
1
K/W
0.1
Z
thJC
0.01
R
G
= 3.3Ω
T
J
= 125°C
V
CEK
< V
CES
diode
IGBT
400
I
CM
300
200
100
0
0.001
0.0001
single pulse
300-12
0
200
400
600
800 1000 1200
V
V
CE
0.00001
0.00001 0.0001
0.001
0.01
t
0.1
s
1
Fig. 11 Reverse biased safe operating area
RBSOA
Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
20090812a
© 2009 IXYS All rights reserved
4-4
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