Bulletin I27262 rev. A 12/06
IRKDS209/150P
SCHOTTKY RECTIFIER
Description/ Features
The IRKDS209.. Schottky rectifier doubler module has been optimized for
low reverse leakage at high temperature. The proprietary barrier technology
allows for reliable operation up to 175 °C junction temperature. Typical
applications are in high current switching power supplies, plating power
supplies, UPS systems, converters, free-wheeling diodes, welding, and
reverse battery protection.
175 °C T
J
operation
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
UL pending
TOTALLY LEAD-FREE, RoHS Compliant
-
(3)
(1)
100 Amp
~
+
(2)
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior me-
chanical ruggedness, thanks to the insertion of a solid
Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of sur-
face roughness and improve thermal spread.
The Generation V of AAP module is manufactured without
hard mold, eliminating in this way any possible direct
stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5
μs
sine
V
F
T
J
@ 100Apk, T
J
=125°C
range
Values
100
150
11300
0.76
- 55 to 175
Units
A
V
A
V
°C
Outline TO-240AA
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1
IRKDS209/150P
Bulletin I27262 rev. A
12/06
Voltage Ratings
Parameters
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
IRKDS209/150P
150
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward
Current
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
11300
1600
15
1
A
mJ
A
5μs Sine or 3μs Rect. pulse
Following any rated
load condition and with
10ms Sine or 6ms Rect. pulse rated V
RRM
applied
Values
100
Units
A
Conditions
50% duty cycle @ T
C
= 107 °C, rectangular wave form
T
J
= 25 °C, I
AS
= 1.8 Amps, L = 10mH
Current decaying linearly to zero in 1
μsec
Frequency limited by T
J
max. V
A
= 1.5 x V
R
typical
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(1)
Values Units
0.96
1.21
0.76
0.96
6
85
3000
7.0
10000
3500
V
V
V
V
mA
mA
pF
nH
V
@ 100A
@ 200A
@ 100A
@ 200A
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
C
T
L
S
V
INS
Max. Reverse Leakage Current
(1)
Max. Junction Capacitance
Typical Series Inductance
RMS isolation voltage (1 sec)
T
J
= 25 °C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100Khz to 1Mhz) 25°C
From top of terminal hole to mounting plane
50 Hz, circuit to base, all terminals shorted
(1) Pulse Width < 300μs, Duty Cycle <2%
dv/dt Max. Voltage Rate of Change
V/
μs
(Rated V
R
)
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range
Max. Storage Temperature Range
Values
-55 to 175
-55 to 175
0.6
0.1
Units
°C
°C
Conditions
R
thJC
Max. Thermal Resistance, Junction
to Case (Per Leg)
R
thCS
Max. Thermal Resistance, case
to Heatsink
wt
T
Approximate Weight
Mounting Torque ± 10%
Case Style
to heatsink
busbar
°C/W DC operation
°C/W Mounting Surface, smooth and greased
110 (4)
gr (oz)
5
Nm
4
TO - 240AA
JEDEC
2
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IRKDS209/150P
Bulletin I27262 rev. A
12/06
1000
Reverse Current - I
R
(mA)
1000
Tj = 175°C
100
10
T J = 175˚C
150˚C
125˚C
1
0.1
0.01
100˚C
75˚C
50˚C
25˚C
Instantaneous Forward Current - I
F
(A)
100
0.001
0
30
60
90
120
Reverse Voltage - V
R
(V)
150
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
10000
10
Tj = 125°C
Junction Capacitance - C
T
(pF)
T = 25˚C
J
1000
Tj = 25°C
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Max. Forward Voltage Drop Characteristics
1
100
0
30
60
90
120
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Thermal Impedance Z
thJC
(°C/W)
D = 0.75
D = 0.5
D = 0.33
D = 0.25
0.1
D = 0.2
Single Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t
1
, Rectangular Pulse Duration (Seconds)
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
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3
IRKDS209/150P
Bulletin I27262 rev. A
12/06
200
Allowable Case Temperature (°C)
Square wave (D=0.50)
80% rated Vr applied
120
Average Power Loss - (Watts)
100
80
60
40
20
0
150
180°
120°
90°
60°
30°
100
DC
DC
50
see note (2)
0
0
50
100
150
200
250
300
Average Forward Current - I
F
(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Non-Repetitive Surge Current - I
FSM
(A)
100000
0
30
60
90
120
150
Average Forward Current - I
F
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
10000
1000
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
100
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 7 - Max. Non-Repetitive Surge Current
L
HIGH-S
PEED
S CH
WIT
FREE-WHEEL
DIODE
40HF
L40S
02
+
DUT
IR P460
F
R = 25 ohm
g
Vd = 25 Volt
CURR
ENT
MONIT
OR
Fig. 8 - Unclamped Inductive Test Circuit
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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IRKDS209/150P
Bulletin I27262 rev. A
12/06
Outline Table
Dimensions are in millimeters and [inches]
Ordering Information Table
Device Code
IR
1
1
2
3
4
5
6
7
KD
2
-
-
-
-
-
-
-
S
3
20
4
9
5
/
150
6
P
7
International Rectifier
Circuit Configuration
KD = Add-A-Pak - 2 diodes in Series
S = Schottky Diode
Average Rating (x10)
Product Silicon Identification
Voltage Rating (150 = 150V)
Lead-Free
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