MJD243 (NPN),
MJD253 (PNP)
Complementary Silicon
Plastic Power Transistors
DPAK−3 for Surface Mount Applications
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Designed for low voltage, low−power, high−gain audio amplifier
applications.
Features
•
High DC Current Gain
•
Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
•
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Low Collector−Emitter Saturation Voltage
High Current−Gain − Bandwidth Product
Annular Construction for Low Leakage
Epoxy Meets UL 94 V−0 @ 0.125 in
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
COMPLEMENTARY
COLLECTOR
2, 4
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
1
BASE
3
EMITTER
4
1
2
1 2
MAXIMUM RATINGS
Rating
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Device Dissipation
@ T
C
= 25°C
Derate above 25°C
Total Device Dissipation
@ T
A
= 25°C (Note 2)
Derate above 25°C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CB
V
CEO
V
EB
I
C
I
CM
I
B
P
D
12.5
0.1
P
D
1.4
0.011
T
J
, T
stg
HBM
MM
−65 to +150
3B
C
W
W/°C
°C
V
V
W
W/°C
Value
100
100
7.0
4.0
8.0
1.0
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
3
3
IPAK
CASE 369D
STYLE 1
DPAK−3
CASE 369C
STYLE 1
MARKING DIAGRAMS
AYWW
J253G
AYWW
J2x3G
IPAK
A
Y
WW
x
G
DPAK
= Assembly Location
= Year
= Work Week
= 4 or 5
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted on minimum pad sizes recommended.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
1
September, 2016 − Rev. 17
Publication Order Number:
MJD243/D
MJD243 (NPN), MJD253 (PNP)
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Î
ÎÎÎÎ
Î
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 2)
°C/W
R
qJC
R
qJA
10
89.3
2. When surface mounted on minimum pad sizes recommended.
Characteristic
Symbol
Value
Unit
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(I
C
= 10 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
(V
CB
= 100 Vdc, I
E
= 0, T
J
= 125°C)
Emitter Cutoff Current
(V
BE
= 7.0 Vdc, I
C
= 0)
DC Current Gain (Note 3)
(I
C
= 200 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 1.0 Adc, V
CE
= 1.0 Vdc)
Collector−Emitter Saturation Voltage (Note 3)
(I
C
= 500 mAdc, I
B
= 50 mAdc)
(I
C
= 1.0 Adc, I
B
= 100 mAdc)
Base−Emitter Saturation Voltage (Note 3)
(I
C
= 2.0 Adc, I
B
= 200 mAdc)
Base−Emitter On Voltage (Note 3)
(I
C
= 500 mAdc, V
CE
= 1.0 Vdc)
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(I
C
= 100 mAdc, V
CE
= 10 Vdc, f
test
= 10 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 0.1 MHz)
Symbol
Min
Max
Unit
V
CEO(sus)
100
I
CBO
−
−
I
EBO
−
h
FE
40
15
V
CE(sat)
−
−
V
BE(sat)
−
V
BE(on)
−
1.5
1.8
0.3
0.6
180
−
100
100
100
−
Vdc
nAdc
mAdc
nAdc
−
Vdc
Vdc
Vdc
f
T
40
C
ob
−
50
−
MHz
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
[
2%.
4. f
T
=
⎪h
FE
⎪•
f
test
.
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2
MJD243 (NPN), MJD253 (PNP)
T
A
T
C
2.5 25
IC, COLLECTOR CURRENT (AMPS)
PD, POWER DISSIPATION (WATTS)
10
5
2
1
0.5
0.2
0.1
5 ms
dc
1 ms
500
ms
100
ms
2 20
1.5 15
T
A
(SURFACE MOUNT)
1 10
T
C
0.5
0
5
0
0.05
0.02
0.01
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED V
CEO
1
2
5
10
20
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
25
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 1. Power Derating
Figure 2. Active Region Maximum
Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on T
J(pk)
= 150°C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
≤
150°C. T
J(pk)
may be calculated from the data in Figure 3.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.02
D = 0.5
0.2
0.1
0.05
0.02
0.01
0 (SINGLE PULSE)
R
qJC
(t) = r(t)
q
JC
R
qJC
= 10°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.05
0.1
0.2
0.5
1
2
t, TIME (ms)
5
10
20
50
100
200
Figure 3. Thermal Response
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3
MJD243 (NPN), MJD253 (PNP)
NPN
MJD243
500
300
200
hFE, DC CURRENT GAIN
100
70
50
30
20
10
7.0
5.0
0.04 0.06
T
J
= 150°C
25°C
- 55°C
V
CE
= 1.0 V
V
CE
= 2.0 V
hFE, DC CURRENT GAIN
200
100
70
50
30
20
10
7.0
5.0
3.0
2.0
0.04 0.06
T
J
= 150°C
25°C
- 55°C
V
CE
= 1.0 V
V
CE
= 2.0 V
PNP
MJD253
0.1
0.2
0.4 0.6
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
0.1
0.2
0.4 0.6
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
Figure 4. DC Current Gain
1.4
T
J
= 25°C
1.2
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
V
CE(sat)
0
0.04 0.06
0.1
0.2
0.4 0.6
1.0
2.0
4.0
V
BE(sat)
@ I
C
/I
B
= 10
V
BE
@ V
CE
= 1.0 V
I
C
/I
B
= 10
5.0
1.4
T
J
= 25°C
1.2
1.0
V
BE(sat)
@ I
C
/I
B
= 10
0.8
0.6
0.4
0.2
V
CE(sat)
0
0.04 0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
V
BE
@ V
CE
= 1.0 V
I
C
/I
B
= 10
5.0
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 5. “On” Voltages
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
+ 2.5
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
- 0.5
- 1.0
- 1.5
- 2.0
- 2.5
0.04 0.06
0.1
0.2
0.4
q
VB
FOR V
BE
- 55°C to 25°C
25°C to 150°C
- 55°C to 25°C
0.6
1.0
2.0
4.0
*q
VC
FOR V
CE(sat)
25°C to 150°C
*APPLIES FOR I
C
/I
B
≤
h
FE/3
- 1.0
- 1.5
- 2.0
q
VB
FOR V
BE
0.1
25°C to 150°C
- 55°C to 25°C
- 2.5
0.04 0.06
0.2
0.4 0.6
1.0
I
C
, COLLECTOR CURRENT (AMP)
2.0
4.0
I
C
, COLLECTOR CURRENT (AMP)
Figure 6. Temperature Coefficients
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4
MJD243 (NPN), MJD253 (PNP)
V
CC
+ 30 V
R
C
R
B
D
1
-4 V
SCOPE
t, TIME (ns)
1K
500
300
200
100
50
30
20
10
5
3
2
1
0.01
NPN MJD243
PNP MJD253
t
d
V
CC
= 30 V
I
C
/I
B
= 10
T
J
= 25°C
t
r
25
ms
+11 V
0
- 9.0 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
51
R
B
and R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES
0.02 0.03 0.05 0.1
1
2
0.2 0.3 0.5
I
C
, COLLECTOR CURRENT (AMPS)
3
5
10
Figure 7. Switching Time Test Circuit
Figure 8. Turn−On Time
10K
5K
3K
2K
1K
t, TIME (ns)
500
300
200
100
50
30
20
10
0.01
t
s
V
CC
= 30 V
I
C
/I
B
= 10
I
B1
= I
B2
T
J
= 25°C
200
T
J
= 25°C
100
C, CAPACITANCE (pF)
70
50
30
20
t
f
NPN MJD243
PNP MJD253
3
5
10
10
1.0
2.0
MJD243 (NPN)
MJD253 (PNP)
3.0
5.0 7.0 10
20 30
V
R
, REVERSE VOLTAGE (VOLTS)
50 70 100
C
ob
C
ib
0.2 0.3 0.5
1
2
0.02 0.03 0.05 0.1
I
C
, COLLECTOR CURRENT (AMPS)
Figure 9. Turn−Off Time
Figure 10. Capacitance
200
T
J
= 25°C
100
C, CAPACITANCE (pF)
70
50
30
20
C
ob
C
ib
10
1
2
3
5
7 10
20 30
V
R
, REVERSE VOLTAGE (VOLTS)
50
70 100
Figure 11. Capacitance
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