MJE270G (NPN),
MJE271G (PNP)
Complementary Silicon
Power Transistors
Features
•
High Safe Operating Area
I
S/B
@ 40 V, 1.0 s = 0.375 A
•
Collector−Emitter Sustaining Voltage
V
CEO(sus)
= 100 Vdc (Min)
•
High DC Current Gain
h
FE
@ 120 mA, 10 V = 1500 (Min)
•
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ T
C
= 25_C
Derate above 25_C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CB
V
EB
I
C
I
CM
I
B
P
D
15
0.12
P
D
1.5
0.012
T
J
, T
stg
−65 to +150
W
W/_C
_C
W
W/_C
Value
100
100
5.0
2.0
4.0
0.1
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
http://onsemi.com
2.0 AMPERE
COMPLEMENTARY
POWER DARLINGTON
TRANSISTORS
100 VOLTS, 15 WATTS
NPN
COLLECTOR 2, 4
BASE
1
PNP
COLLECTOR 2, 4
BASE
1
EMITTER 3
MJE270
EMITTER 3
MJE271
TO−225
CASE 77−09
STYLE 3
1 2
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Symbol
R
qJC
R
qJA
Max
8.33
83.3
Unit
_C/W
_C/W
YWW
JE27xG
Y
= Year
WW
= Work Week
JE27x = Specific Device Code
x= 0 or 1
G
= Pb−Free Package
ORDERING INFORMATION
Device
MJE270G
MJE271G
Package
TO−225
(Pb−Free)
TO−225
(Pb−Free)
Shipping
500 Units/Box
500 Units/Box
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 8
Publication Order Number:
MJE270/D
MJE270G (NPN), MJE271G (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(I
C
= 10 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 100 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 40 Vdc, t = 1.0 s, Non−repetitive)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 20 mAdc, V
CE
= 3.0 Vdc)
(I
C
= 120 mAdc, V
CE
= 10 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 0.2 mAdc)
(I
C
= 120 mAdc, I
B
= 1.2 mAdc)
Base−Emitter On Voltage
(I
C
= 120 mAdc, V
CE
= 10 Vdc)
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(I
C
= 0.05 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz)
f
T
6.0
−
MHz
h
FE
500
1500
V
CE(sat)
−
−
V
BE(on)
−
2.0
2.0
3.0
Vdc
−
−
Vdc
−
I
S/b
375
−
Adc
V
CEO(sus)
100
I
CEO
−
I
CBO
−
I
EBO
−
0.1
0.3
mAdc
1.0
mAdc
−
mAdc
Vdc
Symbol
Min
Max
Unit
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
2. f
T
=
⎪h
fe
⎪•
f
test
.
150°C
3000
25°C
- 55°C
1000
700
500
300
IC, COLLECTOR CURRENT (AMPS)
10,000
7000
5000
hFE, DC CURRENT GAIN
10
V
CE
= 3.0 V
5.0
1.0
0.5
dc
MJE270/MJE271
0.1
0.05
BONDING WIRE LIMIT
THERMAL LIMIT @ T
C
= 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
7.0 10
3.0
30
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70
100
100
0.015
0.03
0.05 0.07 0.1
0.3
0.5 0.7
I
C
, COLLECTOR CURRENT (AMPS)
1.0
1.5
0.01
1.0
Figure 1. DC Current Gain
Figure 2. Safe Operating Area
http://onsemi.com
2
MJE270G (NPN), MJE271G (PNP)
PACKAGE DIMENSIONS
4
TO−225
CASE 77−09
ISSUE AC
1 2
3
FRONT VIEW
3 2
1
BACK VIEW
E
A1
Q
A
PIN 4
BACKSIDE TAB
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. NUMBER AND SHAPE OF LUGS OPTIONAL.
DIM
A
A1
b
b2
c
D
E
e
L
L1
P
Q
MILLIMETERS
MIN
MAX
2.40
3.00
1.00
1.50
0.60
0.90
0.51
0.88
0.39
0.63
10.60
11.10
7.40
7.80
2.04
2.54
14.50
16.63
1.27
2.54
2.90
3.30
3.80
4.20
D
P
1
2
3
L1
L
STYLE 3:
PIN 1. BASE
2., 4. COLLECTOR
3. EMITTER
2X
b2
2X
e
b
FRONT VIEW
c
SIDE VIEW
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
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personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
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any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
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MJE270/D
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