MJF6388 (NPN),
MJF6668 (PNP)
Complementary Power
Darlingtons
For Isolated Package Applications
Designed for general−purpose amplifiers and switching
applications, where the mounting surface of the device is required to
be electrically isolated from the heatsink or chassis.
Features
http://onsemi.com
•
Isolated Overmold Package
•
Electrically Similar to the Popular 2N6388, 2N6668, TIP102,
•
•
•
•
•
and TIP107
No Isolating Washers Required, Reduced System Cost
High DC Current Gain
High Isolation Voltage
UL Recognized at 3500 VRMS: File #E69369
These Devices are Pb−Free and are RoHS Compliant*
COMPLEMENTARY SILICON
POWER DARLINGTONS
10 AMPERES
100 VOLTS, 40 WATTS
COLLECTOR 2
BASE
1
COLLECTOR 2
BASE
1
EMITTER 3
MJF6388 (NPN)
EMITTER 3
MJF6668 (PNP)
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
RMS Isolation Voltage (Note 1)
(t = 0.3 sec, R.H.
≤
30%, T
A
= 25_C)
Per Figure 14
Collector Current − Continuous
Collector Current − Peak (Note 2)
Base Current − Continuous
Total Power Dissipation (Note 3)
@ T
C
= 25_C
Derate above 25_C
Total Power Dissipation
@ T
A
= 25_C
Derate above 25_C
Operating and Storage Temperature Range
Symbol
V
CEO
V
CB
V
EB
V
ISOL
Value
100
100
5.0
4500
Unit
Vdc
Vdc
Vdc
V
TO−220 FULLPACK
CASE 221D
STYLE 2
UL RECOGNIZED
1
2
3
I
C
I
CM
I
B
P
D
10
15
1.0
40
0.31
2.0
0.016
–65 to +150
Adc
Adc
Adc
W
W/_C
W
W/_C
_C
MARKING DIAGRAM
MJF6xy8
MJF6xy8G
AYWW
P
D
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Proper strike and creepage distance must be provided.
2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle
≤
10%.
3. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of
≥
6 in. lbs.
G
A
Y
WW
= Specific Device
Code
x = 3 or 6
y = 6 or 8
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
Device
MJF6388G
MJF6668G
Package
TO−220 FULLPACK
(Pb−Free)
TO−220 FULLPACK
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
Î Î Î Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î Î Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
Characteristic
Symbol
R
qJC
R
qJA
T
L
Max
4.0
Unit
Thermal Resistance, Junction−to−Case (Note 4)
Thermal Resistance, Junction−to−Ambient
Lead Temperature for Soldering Purposes
_C/W
_C/W
_C
62.5
260
4. Measurement made with thermocouple contacting the bottom insulated
surface (in a location beneath the die), the devices mounted on a heatsink with
thermal grease and a mounting torque of
≥
6 in. lbs.
©
Semiconductor Components Industries, LLC, 2013
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
Publication Order Number:
MJF6388/D
1
September, 2013 − Rev. 11
MJF6388 (NPN), MJF6668 (PNP)
ELECTRICAL CHARACTERISTICS
(T
C
= 25_C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 5)
(I
C
= 30 mAdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 80 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CE
= 100 Vdc, V
EB(off)
= 1.5 Vdc)
(V
CE
= 100 Vdc, V
EB(off)
= 1.5 Vdc, T
C
= 125_C)
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
BE
= 5.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(Note 5)
DC Current Gain
(I
C
= 3.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 5.0 Adc, V
CE
= 3.0 Vdc)
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc)
(I
C
= 10 Adc, V
CE
= 3.0 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 3.0 Adc, I
B
= 6.0 mAdc)
(I
C
= 5.0 Adc, I
B
= 0.01 Adc)
(I
C
= 8.0 Adc, I
B
= 80 mAdc)
(I
C
= 10 Adc, I
B
= 0.1 Adc)
Base−Emitter Saturation Voltage
(I
C
= 5.0 Adc, I
B
= 0.01 Adc)
(I
C
= 10 Adc, I
B
= 0.1 Adc)
Base−Emitter On Voltage
(I
C
= 8.0 Adc, V
CE
= 4.0 Vdc)
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f
test
= 1.0 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
MJF6388
MJF6668
Insulation Capacitance
(Collector−to−External Heatsink)
Small−Signal Current Gain
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc, f = 1.0 kHz)
5. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
NPN
MJF6388
COLLECTOR
PNP
MJF6668
COLLECTOR
|h
fe
|
20
C
ob
−
−
C
c−hs
−
h
fe
1000
−
3.0 Typ
−
200
300
pF
−
pF
−
h
FE
3000
1000
200
100
V
CE(sat)
−
−
−
−
V
BE(sat)
−
−
V
BE(on)
−
2.5
2.8
4.5
Vdc
2.0
2.0
2.5
3.0
Vdc
15000
−
−
−
Vdc
−
V
CEO(sus)
100
I
CEO
−
I
CEX
−
−
I
CBO
−
I
EBO
−
2.0
10
mAdc
10
3.0
10
mAdc
mAdc
mAdc
−
mAdc
Vdc
Symbol
Min
Max
Unit
BASE
BASE
≈
8k
≈
120
≈
8k
≈
120
EMITTER
EMITTER
Figure 1. Darlington Schematic
http://onsemi.com
2
MJF6388 (NPN), MJF6668 (PNP)
R
B
& R
C
VARIED TO OBTAIN DESIRED CURRENT LEVELS
D
1
, MUST BE FAST RECOVERY TYPES, e.g.,
MUR110 USED ABOVE I
B
≈
100 mA
MSD6100 USED BELOW I
B
≈
100 mA
V
1
APPROX.
+12 V
51
V
2
APPROX.
-8 V
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1%
R
B
≈
8k
≈
120
V
CC
+ 30 V
R
C
TUT
SCOPE
D
1
25
ms
-4 V
FOR t
d
AND t
r
, D
1
IS DISCONNECTED
AND V
2
= 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
Figure 2. Switching Times Test Circuit
NPN
MJF6388
7
5
3
t
s
t, TIME (
μ
s)
t
f
1
0.7
0.3
0.2
0.1
0.07
0.1
t
r
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
0.2
10
7
5
3
2
1
0.7
0.5
0.3
0.2
PNP
MJF6668
V
CC
= 30 V
I
C
/I
B
= 250
I
B1
= I
B2
T
J
= 25°C
t
s
t
r
t, TIME (
μ
s)
t
d
t
d
t
f
1
0.5
2
I
C
, COLLECTOR CURRENT (AMPS)
5
10
0.1
0.1
0.2
3
2
0.5 0.7 1
0.3
I
C
, COLLECTOR CURRENT (AMPS)
5
7
10
Figure 3. Typical Switching Times
20
IC, COLLECTOR CURRENT (AMPS)
10
5
3
2
1
0.5
0.3
0.2
0.1
0.05
0.03
0.02
100
ms
1 ms
T
J
= 150°C
dc
5 ms
CURRENT LIMIT
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ T
C
= 25°C
(SINGLE PULSE)
1
5
20 30
2
3
10
50
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 4. Maximum Forward Bias
Safe Operating Area
http://onsemi.com
3
MJF6388 (NPN), MJF6668 (PNP)
1
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
0.5
0.3
0.2
0.1
0.1
0.05
0.03
0.02
0.01
0.01 0.02
0.05
0.1
0.2 0.3 0.5
1
2 3
5
10
20 30 50
t, TIME (ms)
100 200 300 500
1K
2K 3K 5K
10K 20K 30K 50K 100K
0.05
SINGLE PULSE
D = 0.5
0.2
R
qJC
(t) = r(t) R
qJC
R
qJC
=
°C/W
MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
qJC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
Figure 5. Thermal Response
1
SECOND BREAKDOWN
DERATING
POWER DERATING FACTOR
0.8
0.6
THERMAL
DERATING
0.4
0.2
0
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 4 is based on T
J(pk)
= l50_C; T
C
is
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by secondary breakdown.
160
20
40
60
80
100
120
140
T
C
, CASE TEMPERATURE (°C)
Figure 6. Maximum Power Derating
NPN
MJF6388
10,000
hfe , SMALL-SIGNAL CURRENT GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1
2
5
10
20
50 100
f, FREQUENCY (kHz)
200
500 1000
T
C
= 25°C
V
CE
= 4 Vdc
I
C
= 3 Adc
10,000
hFE , SMALL-SIGNAL CURRENT GAIN
5000
2000
1000
500
200
100
50
20
10
1
2 3
5 7 10
20 30 50 70 100
f, FREQUENCY (kHz)
200 300 500 1000
T
C
= 25°C
V
CE
= 4 VOLTS
I
C
= 3 AMPS
PNP
MJF6668
Figure 7. Typical Small−Signal Current Gain
http://onsemi.com
4
MJF6388 (NPN), MJF6668 (PNP)
NPN
MJF6388
300
T
J
= 25°C
200
C, CAPACITANCE (pF)
C, CAPACITANCE (pF)
200
300
T
J
= 25°C
PNP
MJF6668
100
70
C
ib
50
C
ob
100
70
50
C
ib
C
ob
30
0.1
0.2
0.5
1
2
5
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
30
0.1
0.2
0.5
1
2
5
10
20
V
R
, REVERSE VOLTAGE (VOLTS)
50
100
Figure 8. Typical Capacitance
20,000
V
CE
= 4 V
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
500
300
200
0.1
T
J
= 150°C
20,000
V
CE
= 4 V
10,000
hFE, DC CURRENT GAIN
7000
5000
3000
2000
25°C
1000
700
500
300
200
0.1
T
J
= 150°C
25°C
- 55°C
- 55°C
0.2
0.3
0.5 0.7
1
2
3
5
7
10
0.2
0.3
0.5 0.7
1
2
3
5
7
10
I
C
, COLLECTOR CURRENT (AMP)
I
C
, COLLECTOR CURRENT (AMP)
Figure 9. Typical DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
T
J
= 25°C
2.6
I
C
= 2 A
4A
6A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3
T
J
= 25°C
2.6
I
C
= 2 A
4A
6A
2.2
2.2
1.8
1.8
1.4
1
0.3
1.4
1
0.3
0.5 0.7
1
2
3
5
7
10
20
30
I
B
, BASE CURRENT (mA)
0.5 0.7
1
2
3
5
7
10
20
30
I
B
, BASE CURRENT (mA)
Figure 10. Typical Collector Saturation Region
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
