Second Breakdown Collector with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 100 Vdc, t = 1 s (non−repetitive)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 500 mAdc, V
CE
= 5 Vdc)
(I
C
= 1 Adc, V
CE
= 5 Vdc)
(I
C
= 3 Adc, V
CE
= 5 Vdc)
(I
C
= 5 Adc, V
CE
= 5 Vdc)
(I
C
= 8 Adc, V
CE
= 5 Vdc)
Collector−Emitter Saturation Voltage
(I
C
= 10 Adc, I
B
= 1 Adc)
DYNAMIC CHARACTERISTICS
Current−Gain
−
Bandwidth Product
(I
C
= 1 Adc, V
CE
= 5 Vdc, f
test
= 1 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
f
T
C
ob
MHz
30
−
−
pF
600
h
FE
75
75
75
75
45
−
150
150
150
150
−
Vdc
3
I
S/b
Adc
4
1
−
−
V
CEO(sus)
I
CBO
I
EBO
Vdc
260
−
−
−
50
5
μAdc
μAdc
Symbol
Min
Max
Unit
V
CE(sat)
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2
MJL3281A (NPN) MJL1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJL1302A
50
f T, CURRENT BANDWIDTH PRODUCT (MHz)
V
CE
= 10 V
40
5V
30
f T, CURRENT BANDWIDTH PRODUCT (MHz)
60
V
CE
= 10 V
50
5V
40
30
20
10
0
0.1
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
T
J
= 25°C
f
test
= 1 MHz
NPN MJL3281A
20
10
0
0.1
T
J
= 25°C
f
test
= 1 MHz
1.0
I
C
, COLLECTOR CURRENT (AMPS)
10
Figure 1. Typical Current Gain
Bandwidth Product
PNP MJL1302A
1000
V
CE
= 5.0 V
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
1000
Figure 2. Typical Current Gain
Bandwidth Product
NPN MJL3281A
V
CE
= 5.0 V
T
J
= 100°C
100
- 25°C
25°C
T
J
= 100°C
100
- 25°C
25°C
10
0.05
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
10
0.05
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 3. DC Current Gain
PNP MJL1302A
3.0
SATURATION VOLTAGE (VOLTS)
SATURATION VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
T
J
= 25°C
I
C
/I
B
= 10
V
BE(sat)
2.5
T
J
= 25°C
I
C
/I
B
= 10
Figure 4. DC Current Gain
NPN MJL3281A
2.0
1.5
V
BE(sat)
1.0
0.5
V
CE(sat)
0
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
V
CE(sat)
Figure 5. Typical Saturation Voltages
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3
Figure 6. Typical Saturation Voltages
MJL3281A (NPN) MJL1302A (PNP)
TYPICAL CHARACTERISTICS
PNP MJL1302A
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
T
J
= 25°C
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
10
10
T
J
= 25°C
NPN MJL3281A
V
CE
= 5 V (DASHED)
1.0
V
CE
= 20 V (SOLID)
V
CE
= 5 V (DASHED)
1.0
V
CE
= 20 V (SOLID)
0.1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
0.1
0.1
1.0
10
I
C
, COLLECTOR CURRENT (AMPS)
100
Figure 7. Typical Base−Emitter Voltage
Figure 8. Typical Base−Emitter Voltage
PNP MJL1302A
10000
C
ib
10000
NPN MJL3281A
C
ib
C, CAPACITANCE (pF)
1000
C
ob
C, CAPACITANCE (pF)
1000
C
ob
T
J
= 25°C
f
test
= 1 MHz
100
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
100
0.1
T
J
= 25°C
f
test
= 1 MHz
1.0
10
100
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 9. MJL1302A Typical Capacitance
Figure 10. MJL3281A Typical Capacitance
100
10 ms
10
50 ms
1 sec
1.0
250 ms
0.1
1.0
10
100
1000
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of
a transistor; average junction temperature and secondary
breakdown. Safe operating area curves indicate I
C
−
V
CE
lim-
its of the transistor that must be observed for reliable opera-
tion; i.e., the transistor must not be subjected to greater dissip-
ation than the curves indicate.
The data of Figure 11 is based on T
J(pk)
= 150°C; T
C
is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power than can be handled
to values less than the limitations imposed by second break-
down.
IC , COLLECTOR CURRENT (AMPS)
Figure 11. Active Region Safe Operating Area
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4
MJL3281A (NPN) MJL1302A (PNP)
PACKAGE DIMENSIONS
TO−3PBL (TO−264)
CASE 340G−02
ISSUE J
Q
−B−
U
A
R
1
2
3
0.25 (0.010)
M
T B
M
−T−
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
MIN
MAX
28.0
29.0
19.3
20.3
4.7
5.3
0.93
1.48
1.9
2.1
2.2
2.4
5.45 BSC
2.6
3.0
0.43
0.78
17.6
18.8
11.2 REF
4.35 REF
2.2
2.6
3.1
3.5
2.25 REF
6.3 REF
2.8
3.2
INCHES
MIN
MAX
1.102
1.142
0.760
0.800
0.185
0.209
0.037
0.058
0.075
0.083
0.087
0.102
0.215 BSC
0.102
0.118
0.017
0.031
0.693
0.740
0.411 REF
0.172 REF
0.087
0.102
0.122
0.137
0.089 REF
0.248 REF
0.110
0.125
N
L
P
K
F
2 PL
W
G
D
3 PL
0.25 (0.010)
M
J
H
T B
S
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
U
W
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
ON Semiconductor
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