DISCRETE SEMICONDUCTORS
DATA SHEET
BFG11; BFG11/X
NPN 2 GHz RF power transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Apr 07
Philips Semiconductors
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
FEATURES
•
High power gain
•
High efficiency
•
Small size discrete power amplifier
•
1.9 GHz operating area
•
Gold metallization ensures excellent reliability.
APPLICATIONS
•
Common emitter class-AB operation in hand-held radio
equipment at 1.9 GHz.
PINNING
PIN
BFG11
(see Fig.1)
1
2
3
4
collector
base
emitter
emitter
1
Top view
BFG11; BFG11/X
DESCRIPTION
NPN silicon planar epitaxial transistors encapsulated in a
plastic, 4-pin dual-emitter SOT143 package.
MARKING
TYPE NUMBER
BFG11
BFG11/X
CODE
N72
N73
DESCRIPTION
handbook, 2 columns
4
3
2
MSB014
BFG11/X
(see Fig.1)
1
2
3
4
collector
emitter
base
emitter
Fig.1 SOT143.
QUICK REFERENCE DATA
RF performance at T
amb
= 25
°C
in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
Pulsed, class-AB, duty cycle < 1 : 8
f
(GHz)
1.9
V
CE
(V)
3.6
P
L
(mW)
400
G
p
(dB)
≥4
η
c
(%)
≥50
1995 Apr 07
2
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
junction temperature
up to T
s
= 60
°C;
note 1; see Fig.2
open base
open collector
CONDITIONS
open emitter
−
−
−
−
−
−
BFG11; BFG11/X
MIN.
8
MAX.
20
2.5
500
500
400
+150
175
V
V
V
UNIT
mA
mA
mW
°C
°C
−65
−
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
up to T
s
= 60
°C;
note 1;
P
tot
= 400 mW
VALUE
290
UNIT
K/W
Note to the “Limiting values” and “Thermal characteristics”
1. T
s
is the temperature at the soldering point of the collector pin.
handbook, halfpage
500
MLC818
P tot
(mW)
400
300
200
100
0
0
50
100
150
Ts ( C)
o
200
Fig.2 Power derating curve.
1995 Apr 07
3
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
PARAMETER
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
DC current gain
collector capacitance
feedback capacitance
CONDITIONS
open emitter; I
C
= 0.1 mA; I
E
= 0
open base; I
C
= 10 mA; I
B
= 0
open collector; I
E
= 0.1 mA; I
C
= 0
V
CE
= 8 V; V
BE
= 0
I
C
= 100 mA; V
CE
= 5 V
I
E
= i
e
= 0; V
CB
= 3.6 V; f = 1 MHz
I
C
= 0; V
CE
= 3.6 V; f = 1 MHz
8
BFG11; BFG11/X
MIN.
20
2.5
−
25
−
−
−
−
−
MAX.
V
V
V
UNIT
100
−
4
3
µA
pF
pF
handbook, halfpage
4
MLC848
Cc
(pF)
3
2
1
0
0
2
4
6
8
10
V CB (V)
I
C
= 0; f = 1 MHz.
Fig.3
Collector capacitance as a function of
collector-base voltage; typical values.
1995 Apr 07
4
Philips Semiconductors
Product specification
NPN 2 GHz RF power transistor
APPLICATION INFORMATION
RF performance at T
amb
= 25
°C
in a common-emitter test circuit (see Fig.7).
MODE OF OPERATION
Pulsed, class-AB, duty cycle < 1 : 8
f
(GHz)
1.9
V
CE
(V)
3.6
I
CQ
(mA)
1
P
L
(mW)
400
BFG11; BFG11/X
G
p
(dB)
≥4
typ. 5
η
c
(%)
≥50
typ. 70
Ruggedness in class-AB operation
The BFG11 is capable of withstanding a load mismatch corresponding to VSWR = 8 : 1 through all phases, at rated
output power under pulsed conditions up to a supply voltage of 8 V, f = 1.9 GHz and a duty cycle of 1 : 8.
MLC849
MLC850
handbook, halfpage
8
Gp
100
η
c
η
c
80
Gp
(%)
handbook, halfpage
800
(dB)
6
PL
(mW)
600
4
60
400
2
40
200
0
0
200
400
600
20
800
P L (mW)
0
0
100
200
PD (mW)
300
Pulsed, class-AB operation.
V
CE
= 3.6 V; V
BE
= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for P
L
= 400 mW.
Pulsed, class-AB operation.
V
CE
= 3.6 V; V
BE
= 0.65 V; f = 1.9 GHz; duty cycle < 1 : 8.
Circuit optimized for P
L
= 400 mW.
Fig.4
Power gain and collector efficiency as
functions of load power; typical values.
Fig.5
Load power as a function of drive power;
typical values.
1995 Apr 07
5
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