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CA33

产品描述10MHz - 2000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
产品类别无线/射频/通信    射频和微波   
文件大小350KB,共2页
制造商TE Connectivity(泰科)
官网地址http://www.te.com
下载文档 详细参数 选型对比 全文预览

CA33概述

10MHz - 2000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER

CA33规格参数

参数名称属性值
厂商名称TE Connectivity(泰科)
Reach Compliance Codeunknown
Is SamacsysN
其他特性SMA, I/P POWER-MAX (PEAK)=31.76DBM
特性阻抗50 Ω
构造COAXIAL
增益8 dB
最大输入功率 (CW)13 dBm
最大工作频率2000 MHz
最小工作频率10 MHz
最高工作温度85 °C
最低工作温度-54 °C
射频/微波设备类型WIDE BAND LOW POWER
最大电压驻波比2.2
Base Number Matches1

文档预览

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Cascadable Amplifier
10 to 2000 MHz
Features
AVAILABLE IN SURFACE MOUNT
LOW NOISE FIGURE: 4.5 dB (TYP.)
+3 dBm OUTPUT LEVEL (TYP.)
WIDE POWER SUPPLY RANGE +8 TO +15 VOLTS
A33/ SMA33
V2
Product Image
Description
The A33 RF amplifier is a discrete thin film hybrid design,
which incorporates the use of thin film manufacturing
processes for accurate performance and high reliability.
This single stage bipolar transistor feedback amplifier design
displays impressive performance over a broadband frequency
range. An active DC biasing network is used for
temperature-stable performance, in addition to an RF Choke,
used for power supply decoupling.
Both TO-8 and Surface Mount packages are hermetically sealed,
and MIL-STD-883 environmental screening is available
.
Ordering Information
Part Number
A33
SMA33
CA33
Package
TO-8
Surface Mount
SMA Connectorized
Electrical Specifications: Z
0
= 50Ω, V
CC
= +15 V
DC
Typical
Parameter
Frequency
Small Signal Gain (min)
Gain Flatness (max)
Reverse Isolation
Noise Figure (max)
Power Output
@ 1 dB comp. (min)
IP3
IP2
Second Order Harmonic IP
VSWR Input / Output (max)
DC Current @ 15 Volts (max)
mA
Absolute Maximum Ratings
Parameter
Storage Temperature
Case Temperature
DC Voltage
Continuous Input Power
Short Term Input power
(1 minute max.)
Guaranteed
0º to 50ºC
10-2000
8.5
±0.8
Units
25ºC
MHz
dB
dB
dB
dB
dBm
dBm
dBm
dBm
1-2050
9.5
±0.5
15
4.5
3.0
+15
+22
Thermal Resistance θ
jc
+28
Transistor Power Dissipation P
d
1.7:1 / 1.7:1
14
2.0:1 / 2.0:1
16
2.2:1 / 2.2:1
17
Junction Temperature Rise
Above Case T
jc
5.5
2.5
6.0
2.0
Absolute
Maximum
-62ºC to +125ºC
+125ºC
+20 V
+13 dBm
50 mW
1.5 W
+125ºC
-54º to +85ºC*
10-2000
8.0
±1.0
Peak Power (3 sec max.)
“S” Series Burn-In
Temperature (case)
Thermal Data: V
CC
= +15 V
DC
Parameter
Rating
45ºC/W
0.165 W
+7ºC
* Over temperature performance limits for part number CA33, guaranteed from 0
o
C to +50
o
C only.
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the
product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
North America
Tel: 800.366.2266 / Fax: 978.366.2266
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macom.com for additional data sheets and product information.

CA33相似产品对比

CA33 SMA33
描述 10MHz - 2000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 10MHz - 2000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, SURFACE MOUNT PACKAGE
厂商名称 TE Connectivity(泰科) TE Connectivity(泰科)
Reach Compliance Code unknown unknow
其他特性 SMA, I/P POWER-MAX (PEAK)=31.76DBM I/P POWER-MAX (PEAK)=31.76DBM
特性阻抗 50 Ω 50 Ω
构造 COAXIAL COMPONENT
增益 8 dB 8 dB
最大输入功率 (CW) 13 dBm 13 dBm
最大工作频率 2000 MHz 2000 MHz
最小工作频率 10 MHz 10 MHz
最高工作温度 85 °C 85 °C
最低工作温度 -54 °C -54 °C
射频/微波设备类型 WIDE BAND LOW POWER WIDE BAND LOW POWER
最大电压驻波比 2.2 2.2

 
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