Datasheet> 器件分类 > 分立半导体> 二极管> JANHCA1N5711

JANHCA1N5711: 产品描述Rectifier Diode, 1 Element, 0.033A, Silicon,; 产品类别分立半导体二极管; 文件大小32KB，共2页; 制造商Microsemi; 官网地址https://www.microsemi.com

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JANHCA1N5711概述

Rectifier Diode, 1 Element, 0.033A, Silicon,

JANHCA1N5711规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Microsemi
零件包装代码	DIE
包装说明	S-XUUC-N2
针数	2
Reach Compliance Code	compliant
ECCN代码	EAR99
Is Samacsys	N
其他特性	METALLURGICALLY BONDED
外壳连接	CATHODE
配置	SINGLE
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
JESD-30 代码	S-XUUC-N2
JESD-609代码	e0
元件数量	1
端子数量	2
最大输出电流	0.033 A
封装主体材料	UNSPECIFIED
封装形状	SQUARE
封装形式	UNCASED CHIP
认证状态	Qualified
表面贴装	YES
端子面层	Tin/Lead (Sn/Pb)
端子形式	NO LEAD
端子位置	UPPER
Base Number Matches	1

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• 1N5711-1 AVAILABLE IN

JAN, JANTX, JANTXV AND JANS

PER MIL-PRF-19500/444

• 1N5712-1 AVAILABLE IN

JAN, JANTX, JANTXV AND JANS

PER MIL-PRF-19500/445

• SCHOTTKY BARRIER DIODES

• HERMETICALLY SEALED

• METALLURGICALLY BONDED

1N5711

1N5711-1

1N5712-1

1N6857-1

1N6858-1

DSB2810

DSB5712

MAXIMUM RATINGS

Operating Temperature: -65°C to +150°C

Storage Temperature:

-65°C to +150°C

Operating Current: 5711 types

2810,5712 & 6858 types

6857 TYPE

Derating:

all types:

:33mA dc@ TL = +130°C, L = 3/8”

:75mA dc@ TL = +110°C, L = 3/8”

:75mA dc@ TL = +70°C, L = 3/8”

Derate to 0 (zero)mA@+150°C

ELECTRICAL CHARACTERISTICS

@ 25°C, unless otherwise specified.

CDI

TYPE

NUMBER

MINIMUM

BREAKDOWN

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM

FORWARD

VOLTAGE

MAXIMUM REVERSE

LEAKAGE CURRENT

MAXIMUM

CAPACITANCE @

= 0 VOLTS

f = 1.0 MH

@ 10

VOLTS

DSB2810

1N5711,-1

DSB5712

1N5712-1

1N6857-1

1N6858-1

V @ 1 mA

VOLTS

0.41

0.35

0.36

V @I

MILLIAMPS

1.0@35

1.0@15

1.0@35

0.75@35

0.65@15

I @V

VOLTS

PICO FARADS

2.0

4.5

ESDS

CLASS

100

200

150

200

FIGURE 1

DESIGN DATA

CASE:

Hermetically sealed glass case

per MIL-PRF-19500/444 and /445

DO-35 Outline

LEAD MATERIAL:

Copper clad steel.

LEAD FINISH:

Tin / Lead

THERMAL RESISTANCE: (R

OJEC): 250

C/W maximum at L = .375 inch

THERMAL IMPEDANCE: (Z

OJX): 40

C/W maximum

POLARITY:

Cathode end is banded.

NOTE:

Effective Minority Carrier Lifetime (

) is 100 Pico Seconds

NOTICE:

Qualification testing to M, JX, and JS levels for 6857 and 6858 types is underway.

Contact the factory for qualification completion dates. These two part numbers are

being introduced by CDI as “drop-in” replacements for the 5711 and 5712. They

provide a more robust mechanical design and a higher ESDS class with the only

trade-off being an increase in capacitance.

MOUNTING POSITION:

Any.

6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841

PHONE (978) 620-2600

FAX (978) 689-0803

WEBSITE: http://www.microsemi.com

JANHCA1N5711相似产品对比

	JANHCA1N5711	JANHCA1N5712	JANKCA1N5711	JANKCA1N5712
描述	Rectifier Diode, 1 Element, 0.033A, Silicon,	Rectifier Diode, 1 Element, 0.075A, Silicon,	Rectifier Diode, Schottky, 1 Element, 0.033A, 70V V(RRM), Silicon, DIE-2	Rectifier Diode, 1 Element, 0.075A, Silicon,
是否Rohs认证	不符合	不符合	不符合	不符合
厂商名称	Microsemi	Microsemi	Microsemi	Microsemi
零件包装代码	DIE	DIE	DIE	DIE
针数	2	2	2	2
Reach Compliance Code	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99
其他特性	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED	METALLURGICALLY BONDED
外壳连接	CATHODE	CATHODE	CATHODE	CATHODE
配置	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 代码	S-XUUC-N2	S-XUUC-N2	S-XUUC-N2	S-XUUC-N2
JESD-609代码	e0	e0	e0	e0
元件数量	1	1	1	1
端子数量	2	2	2	2
最大输出电流	0.033 A	0.075 A	0.033 A	0.075 A
封装主体材料	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
封装形状	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP	UNCASED CHIP
认证状态	Qualified	Qualified	Qualified	Qualified
表面贴装	YES	YES	YES	YES
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	NO LEAD	NO LEAD	NO LEAD	NO LEAD
端子位置	UPPER	UPPER	UPPER	UPPER

JANHCA1N5711

JANHCA1N5711在线购买

JANHCA1N5711概述

JANHCA1N5711规格参数

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