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NAND02GW3B2DZA6F

产品描述IC,EEPROM,NAND FLASH,256MX8,CMOS,BGA,63PIN,PLASTIC
产品类别存储    存储   
文件大小996KB,共69页
制造商ST(意法半导体)
官网地址http://www.st.com/
标准
下载文档 详细参数 全文预览

NAND02GW3B2DZA6F概述

IC,EEPROM,NAND FLASH,256MX8,CMOS,BGA,63PIN,PLASTIC

NAND02GW3B2DZA6F规格参数

参数名称属性值
是否Rohs认证符合
厂商名称ST(意法半导体)
Reach Compliance Codeunknown
Is SamacsysN
最长访问时间20 ns
命令用户界面YES
数据轮询NO
JESD-30 代码R-PBGA-B63
内存密度2147483648 bit
内存集成电路类型FLASH
内存宽度8
部门数/规模2K
端子数量63
字数268435456 words
字数代码256000000
最高工作温度85 °C
最低工作温度-40 °C
组织256MX8
封装主体材料PLASTIC/EPOXY
封装代码FBGA
封装等效代码BGA63,10X12,32
封装形状RECTANGULAR
封装形式GRID ARRAY, FINE PITCH
页面大小2K words
并行/串行PARALLEL
电源3/3.3 V
认证状态Not Qualified
就绪/忙碌YES
部门规模128K
最大待机电流0.00005 A
最大压摆率0.03 mA
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式BALL
端子节距0.8 mm
端子位置BOTTOM
切换位NO
类型NAND TYPE
Base Number Matches1

文档预览

下载PDF文档
NAND02G-B2D
2 Gbit, 2112-byte/1056-word page
multiplane architecture, 1.8 V or 3 V, NAND Flash memories
Preliminary Data
Features
High density NAND Flash memory
– Up to 2 Gbit memory array
– Cost-effective solution for mass storage
applications
NAND interface
– x 8 or x 16 bus width
– Multiplexed address/data
Supply voltage: 1.8 V or 3.0 V device
Page size
– x 8 device: (2048 + 64 spare) bytes
– x 16 device: (1024 + 32 spare) words
Block size
– x 8 device: (128 K + 4 K spare) bytes
– x 16 device: (64 K + 2 K spare) words
Multiplane architecture
– Array split into two independent planes
– Program/erase operations can be
performed on both planes at the same time
Page read/program
– Random access: 25 µs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 µs (typ)
– Multiplane page program time (2 pages):
200 µs (typ)
Copy back program with automatic EDC (error
detection code)
Cache read mode
Fast block erase
– Block erase time: 1.5 ms (typ)
– Multiblock erase time (2 blocks): 1.5 ms
(typ)
TSOP48 12 x 20 mm (N)
FBGA
VFBGA63 9.5 x 12 mm (ZA)
Status register
Electronic signature
Chip Enable ‘don’t care’
Serial number option
Data protection:
– Hardware program/erase disabled during
power transitions
– Non-volatile protection option
ONFI 1.0 compliant command set
Data integrity
– 100,000 program/erase cycles (with ECC)
– 10 years data retention
ECOPACK
®
packages
Device summary
Part number
NAND02GR3B2D
NAND02G-B2D
NAND02GW3B2D
NAND02GR4B2D
(1)
NAND02GW4B2D
(1)
Table 1.
Reference
1. x 16 organization only available for MCP products.
February 2008
Rev 2
1/69
www.st.com
1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.

 
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