MMBD452LT1
Preferred Device
Dual Hot−Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and
VHF detector applications. They are readily adaptable to many other
fast switching RF and digital applications. They are supplied in an
inexpensive plastic package for low−cost, high−volume consumer
and industrial/commercial requirements.
Features
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•
•
•
•
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
Pb−Free Package is Available
30 VOLTS
DUAL HOT−CARRIER
DETECTOR AND SWITCHING
DIODES
1
ANODE
2
CATHODE
3
CATHODE/ANODE
MAXIMUM RATINGS
(T
J
= 125°C unless otherwise noted)
Rating
Reverse Voltage
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
R
P
F
225
1.8
T
J
T
stg
−55 to +125
−55 to +150
mW
mW/°C
°C
°C
1
Value
30
Unit
V
3
2
SOT−23 (TO−236)
CASE 318
STYLE 11
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
(EACH DIODE)
Characteristic
Reverse Breakdown Voltage
(I
R
= 10
mA)
Total Capacitance
(V
R
= 15 V, f = 1.0 MHz) Figure 1
Reverse Leakage
(V
R
= 25 V) Figure 3
Forward Voltage
(I
F
= 1.0 mAdc) Figure 4
Forward Voltage
(I
F
= 10 mAdc) Figure 4
Symbol
V
(BR)R
C
T
I
R
V
F
V
F
Min
30
−
−
−
−
Typ
−
0.9
13
0.38
0.52
Max
−
1.5
200
0.45
0.6
Unit
V
pF
nAdc
Vdc
1
5N M
G
G
5N = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Vdc
Device
MMBD452LT1
MMBD452LT1G
Package
SOT−23
Shipping
†
3,000 / Tape & Reel
SOT−23 3,000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 3
Publication Order Number:
MMBD452LT1/D
MMBD452LT1
TYPICAL ELECTRICAL CHARACTERISTICS
2.8
C T, TOTAL CAPACITANCE (pF)
2.4
2.0
1.6
1.2
0.8
0.4
0
0
3.0
6.0
9.0
12
15
18
21
V
R
, REVERSE VOLTAGE (VOLTS)
24
27
30
f = 1.0 MHz
500
t
, MINORITY CARRIER LIFETIME (ps)
400
KRAKAUER METHOD
300
200
100
0
0
10
20
30
40
50
60
70
I
F
, FORWARD CURRENT (mA)
80
90
100
Figure 1. Total Capacitance
Figure 2. Minority Carrier Lifetime
10
T
A
= 100°C
100
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (
m
A)
1.0
10
T
A
= 85°C
T
A
= −40°C
0.1
75°C
0.01
25°C
1.0
T
A
= 25°C
0.001
0
6.0
12
18
V
R
, REVERSE VOLTAGE (VOLTS)
24
30
0.1
0.2
0.4
0.6
0.8
V
F
, FORWARD VOLTAGE (VOLTS)
1.0
1.2
Figure 3. Reverse Leakage
Figure 4. Forward Voltage
I
F(PEAK)
CAPACITIVE
CONDUCTION
I
R(PEAK)
FORWARD
CONDUCTION
STORAGE
CONDUCTION
SINUSOIDAL
GENERATOR
BALLAST
NETWORK
(PADS)
PADS
DUT
SAMPLING
OSCILLOSCOPE
(50
W
INPUT)
Figure 5. Krakauer Method of Measuring Lifetime
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2
MMBD452LT1
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
D
3
SEE VIEW C
E
1
2
HE
c
b
e
q
0.25
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
A
L
A1
L1
VIEW C
DIM
A
A1
b
c
D
E
e
L
L1
H
E
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any
liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over
time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under
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or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
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personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part.
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MMBD452LT1/D