UNISONIC TECHNOLOGIES CO., LTD
MMBT5551
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High Collector-Emitter Voltage:
V
CEO
=160V
* High current gain
3
1
2
SOT-23
*Pb-free plating product number:MMBT5551L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBT5551-x-AE3-6-R MMBT5551L-x-AE3-6-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MMBT5551L-x-AE3-6-R
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) R: Tape Reel
(2) refer to Pin Assignment
(3) AE3: SOT-23
(4) x: refer to Classification of h
FE
(5) L: Lead Free Plating, Blank: Pb/Sn
MARKING
G1
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-010,D
MMBT5551
PARAMETER
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS
(Ta = 25℃)
SYMBOL
RATINGS
UNIT
Collector -Base Voltage
V
CBO
180
V
Collector -Emitter Voltage
V
CEO
160
V
Emitter -Base Voltage
V
EBO
6
V
DC Collector Current
I
C
600
mA
Power Dissipation
P
D
350
mW
℃
Operating and Storage Junction Temperature
T
J,
T
STG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta= 25℃, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain(note)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
C
ob
N
F
TEST CONDITIONS
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=120V, I
E
=0
V
BE
=4V, I
C
=0
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=10V, I
C
=10mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
I
C
=0.25mA, V
CE
=5V
R
S
=1kΩ, f=10Hz ~ 15.7kHz
MIN
180
160
6
TYP
MAX
UNIT
V
V
V
nA
nA
50
50
80
80
80
160
400
0.15
0.2
1
1
300
6.0
8
V
V
MHz
pF
dB
100
Note: Pulse test: PW<300µs, Duty Cycle<2%
CLASSIFICATION OF h
FE
RANK
RANGE
A
80-170
B
150-240
C
200-400
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MMBT5551
■
TYPICAL CHARACTERICS
Fig.1 Collector Output Capacitance
10
NPN EPITAXIAL SILICON TRANSISTOR
Fig.2 DC Current Gain
3
10
Capacitance, Cob (pF)
V
CE
=5V
DC current Gain, h
FE
2
10
8
f=1MHz
I
E
=0
10
2
6
4
10
1
2
0
10
0
1
10
0
10
-1
10
0
10
10
1
2
10
3
10
Collector-Base Voltage (V)
Collector Current, Ic (mA)
Fig.3 Base-Emitter on Voltage
3
10
1
10
Fig.4 Saturation Voltage
Ic=10*I
B
Collector Current, Ic (mA)
V
CE
=5V
2
10
Saturation Voltage (V)
0
10
V
BE(SAT)
1
10
-1
10
V
CE(SAT )
-2
10
0
10
0
0.2
0.4
0.6
0.8
1.0
-1
10
0
10
1
10
2
10
3
10
Base-Emitter Voltage (V)
Collector Current, Ic (mA)
Current Gain-Bandwidth Product, f
T
(MHz)
Fig.5 Current Gain -Bandwidth
Product
3
10
V
CE
=10V
2
10
1
10
0
10
0
10
1
10
2
10
3
10
Collector Current, Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-010,D
MMBT5551
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-010,D
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