MMBT6427LT1G,
SMMBT6427LT1G
Darlington Transistor
NPN Silicon
Features
www.onsemi.com
•
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
Collector
−Base
Voltage
Emitter
−Base
Voltage
Collector Current
−
Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
40
12
500
Unit
Vdc
Vdc
Vdc
mAdc
SOT−23 (TO−236)
CASE 318
STYLE 6
COLLECTOR 3
BASE
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate,
(Note 2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
417
−55
to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
EMITTER 2
MARKING DIAGRAM
R
qJA
P
D
1V M
G
G
R
qJA
T
J
, T
stg
1V = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
ORDERING INFORMATION
Device
MMBT6427LT1G
SMMBT6427LT1G
Package
Shipping
†
SOT−23 3,000 Tape & Reel
(Pb−Free)
SOT−23 3,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 1994
October, 2016
−
Rev. 5
1
Publication Order Number:
MMBT6427LT1/D
MMBT6427LT1G, SMMBT6427LT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector
−Emitter
Breakdown Voltage
(I
C
= 10 mAdc, V
BE
= 0)
Collector
−Base
Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter
−Base
Breakdown Voltage
(I
C
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= 25 Vdc, I
B
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 500 mAdc, V
CE
= 5.0 Vdc)
Collector
−Emitter
Saturation Voltage
(I
C
= 50 mAdc, I
B
= 0.5 mAdc)
(I
C
= 500 mAdc, I
B
= 0.5 mAdc)
Base
−Emitter
Saturation Voltage
(I
C
= 500 mAdc, I
B
= 0.5 mAdc)
Base
−Emitter
On Voltage
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
SMALL− SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Current Gain
−
High Frequency
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
Noise Figure
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, R
S
= 100 kW, f = 1.0 kHz)
C
obo
C
ibo
|h
fe
|
NF
−
−
1.3
−
7.0
15
−
10
pF
pF
Vdc
dB
h
FE
10,000
20,000
14,000
−
−
−
−
100,000
200,000
140,000
1.2
1.5
2.0
1.75
−
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
I
CBO
I
EBO
40
40
12
−
−
−
−
−
−
1.0
50
50
Vdc
Vdc
Vdc
mAdc
nAdc
nAdc
Symbol
Min
Max
Unit
V
CE(sat)(3)
Vdc
V
BE(sat)
V
BE(on)
Vdc
Vdc
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2.0%.
www.onsemi.com
2
MMBT6427LT1G, SMMBT6427LT1G
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
NOISE CHARACTERISTICS
(V
CE
= 5.0 Vdc, T
A
= 25°C)
500
200
en, NOISE VOLTAGE (nV)
100
10
mA
50
100
mA
20
I
C
= 1.0 mA
10
5.0
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
BANDWIDTH = 1.0 Hz
R
S
≈
0
i n, NOISE CURRENT (pA)
2.0
BANDWIDTH = 1.0 Hz
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10 20
50 100 200
500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
100
mA
10
mA
I
C
= 1.0 mA
Figure 2. Noise Voltage
Figure 3. Noise Current
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200
14
BANDWIDTH = 10 Hz TO 15.7 kHz
12
NF, NOISE FIGURE (dB)
100
70
50
30
20
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
= 10
mA
10
10
mA
8.0
6.0
4.0
2.0
0
1.0
I
C
= 1.0 mA
100
mA
100
mA
1.0 mA
10
1.0
2.0
5.0
10
20
50 100 200
R
S
, SOURCE RESISTANCE (kW)
500
1000
2.0
5.0
10
20
50 100 200
R
S
, SOURCE RESISTANCE (kW)
500
1000
Figure 4. Total Wideband Noise Voltage
Figure 5. Wideband Noise Figure
www.onsemi.com
3
MMBT6427LT1G, SMMBT6427LT1G
SMALL−SIGNAL CHARACTERISTICS
20
T
J
= 25°C
10
C, CAPACITANCE (pF)
7.0
5.0
C
ibo
C
obo
|h fe |, SMALL-SIGNAL CURRENT GAIN
4.0
V
CE
= 5.0 V
f = 100 MHz
T
J
= 25°C
2.0
1.0
0.8
0.6
0.4
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
V
R
, REVERSE VOLTAGE (VOLTS)
10
20
40
0.2
0.5
1.0
2.0
0.5 10 20
50
100 200
I
C
, COLLECTOR CURRENT (mA)
500
Figure 6. Capacitance
Figure 7. High Frequency Current Gain
200 k
T
J
= 125°C
hFE, DC CURRENT GAIN
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
5.0 7.0
10
20 30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3.0
T
J
= 25°C
2.5
I
C
= 10 mA
2.0
50 mA
250 mA
500 mA
25°C
1.5
- 55°C
V
CE
= 5.0 V
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50
I
B
, BASE CURRENT (mA)
100 200
500 1000
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
R
θ
V, TEMPERATURE COEFFICIENTS (mV/
°
C)
1.6
T
J
= 25°C
1.4
V, VOLTAGE (VOLTS)
V
BE(sat)
@ I
C
/I
B
= 1000
1.2
V
BE(on)
@ V
CE
= 5.0 V
1.0
- 1.0
*APPLIES FOR I
C
/I
B
≤
h
FE
/3.0
*R
qVC
FOR V
CE(sat)
25°C TO 125°C
- 2.0
- 55°C TO 25°C
- 3.0
25°C TO 125°C
- 4.0
q
VB
FOR V
BE
- 5.0
- 55°C TO 25°C
0.8
V
CE(sat)
@ I
C
/I
B
= 1000
0.6
5.0 7.0
10
20 30
50 70 100 200 300
I
C
, COLLECTOR CURRENT (mA)
500
- 6.0
5.0 7.0 10
20 30
50 70 100
200 300
I
C
, COLLECTOR CURRENT (mA)
500
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
www.onsemi.com
4
MMBT6427LT1G, SMMBT6427LT1G
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.05
SINGLE PULSE
D = 0.5
0.2
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
SINGLE PULSE
Z
qJC(t)
= r(t)
•
R
qJC
T
J(pk)
- T
C
= P
(pk)
Z
qJC(t)
Z
qJA(t)
= r(t)
•
R
qJA
T
J(pk)
- T
A
= P
(pk)
Z
qJA(t)
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0 k
2.0 k
5.0 k 10 k
Figure 12. Thermal Response
FIGURE A
t
P
P
P
P
P
t
1
1/f
t
DUTY CYCLE
+
t1 f
+
1
tP
PEAK PULSE POWER = P
P
Design Note: Use of Transient Thermal Resistance Data
www.onsemi.com
5
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
