UNISONIC TECHNOLOGIES CO., LTD
MMBTH10
RF TRANSISTOR
DESCRIPTION
The UTC
MMBTH10
is designed for using as VHF and UHF
oscillators and VHF Mixer in a tuner of a TV receiver.
NPN SILICON TRANSISTOR
*Pb-free plating product number:
MMBTH10L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBTH10-x-AE3-C-R
MMBTH10L-x-AE3-C-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MARKING
3E
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 5
QW-R206-003,E
MMBTH10
ABSOLUTE MAXIMUM RATING
(Ta=25℃)
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Total Power Dissipation
Collector current
SYMBOL
V
CBO
V
CEO
V
EBO
P
C
I
C
NPN SILICON TRANSISTOR
RATINGS
30
25
3
225
50
UNIT
V
V
V
mW
mA
Junction Temperature
T
J
150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BV
CBO
I
C
=100μA
Collector-Emitter Breakdown Voltage BV
CEO
I
C
=1mA
Emitter-Base Breakdown Voltage
BV
EBO
I
E
=10μA
Collector-Emitter Saturation Voltage
V
CE(SAT)
I
C
=4mA, I
B
=400μA
Base-Emitter on Voltage
V
BE(ON)
V
CE
=10V, I
C
=4mA
Collector Cut-off Current
I
CBO
V
CB
=25V
Emitter Cut-off Current
I
EBO
V
EB
=2V
DC Current Gain
h
FE
V
CE
=10V, I
C
=4mA
Output Capacitance
C
ob
V
CB
=10V, f=1MHZ
Current Gain Bandwidth Product
f
T
V
CE
=10V, I
C
=4mA, f=100MHz
MIN
30
25
3
TYP
MAX
UNIT
V
V
V
mV
mV
nA
nA
pF
MHz
500
950
100
100
60
0.7
650
CLASSIFICATION OF h
FE
RANK
RANGE
A
60-100
B
90-130
C
120-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 5
QW-R206-003,E
MMBTH10
TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Base Emitter On Voltage, V
BE(ON)
(V)
Base Emitter Voltage, V
BE(SAT)
(V)
Collector-Emitter Voltage, V
CE(SAT)
(V)
Typical Pulsed Current Gain, h
FE
10
Collector Current, I
CBO
(nA)
V
CB
=30V
Power Dissipation, P
D
(mW)
Collector-Cutoff Current Vs
Ambient Temperature
350
300
250
200
150
100
50
0
0
Power Dissipation Vs Ambient
Temperautre
1
0.1
25
50
75
100
125
150
25
50
75
100
125
150
Ambient Temperature, T
A
(℃)
Temperature (℃)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R206-003,E
MMBTH10
TYPICAL CHARACTERISTICS(Cont.)
Output Admittance, |Yob| (mmhos)
NPN SILICON TRANSISTOR
Input Admittance, |Yib| (mmhos)
Forward Admittance, |Yfb| (mmhos)
Reverse Admittance, |Yrb| (mmhos)
Input Admittance, |Yie| (mmhos)
24
20
16
12
Output Admittance, |Yoe| (mmhos)
Input Admittance
V
CE
=10V
Ic=2mA
g
ie
Output Admittance
6
5
4
b
oe
3
2
1
g
oe
0
0
200
500
1000
V
CE
=10V
Ic=2mA
b
ie
8
4
0
0
200
500
1000
Frequency, f (MHz)
Frequency, f (MHz)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R206-003,E
MMBTH10
TYPICAL CHARACTERISTICS(Cont.)
Forward Transfer Admittance
g
fe
V
CE
=10V
Ic=2mA
NPN SILICON TRANSISTOR
60
40
20
0
-20
-40
-60
100
1.2
1
0.8
Reverse Transfer Admittance
V
CE
=10V
Ic=2mA
-b
re
0.6
0.4
b
fe
200
500
1000
0.2
0
-g
re
0
200
500
1000
Frequency, f (MHz)
Frequency, f (MHz)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 5
QW-R206-003,E
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
