MMBZ5V6A Series
Dual Common Anode Zener TVS
SMALL SIGNAL
ZENER DIODES
300m WATTS
3-26 VOLTS
Features:
*Allows Either Two Separate Unidirectional Configuations or a Single
Bidirectional Configuations.
*Low Leakage Current.
*24-40 Watts Peak Power Protection.
*Excellent Clamping Capability.
*ESD Rating of Class N(exceeding 16KV)per the Human Body Model.
*Transient Voltage Suppressors Encapsulated in a SOT-23 Package.
3
1
2
Mechanical Data:
*Case: Molded Epoxy
*Marking: Marking Code
*Maximum Case Temperature for Soldering Purpose: 260 C for 10 sec.
*Weight: 0.008grams(approx.)
SOT-23
SOT-23 Outline Dimensions
Dim Min Max
A
0.35 0.51
B
1.19 1.40
C
2.10 3.00
D
0.85 1.05
E
0.46 1.00
G
1.70 2.10
H
2.70 3.10
J
0.01 0.13
K
0.89 1.10
L
0.30 0.61
M
0.076 0.25
Unit:mm
A
TOP VIEW
B
C
E
G
H
D
K
L
J
M
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MMBZ5V6A Series
Maximum Ratings (T
A
=25 C Unless otherwise Noted)
Characteristics
_
Peak Power Dissipation @ 1.0 ms @ T
L
< 25 C
(1)
MMBZ5V6A thru MMBZ10VA
MMBZ12VA thru MMBZ33VA
Total Power Dissipation on FR-5 Board
(2)
@ T
A
=25 C
Derate above 25 C
Thermal Resistance Junction-to-Ambient
Total Power Dissipation on Alumina Substrate
(3)
@ T
A
=25 C
Derate above 25 C
Thermal Resistance Junction-to-Ambient
Junction and Storage Temperature Range
Lead Solder Temperature-Maximum(10 Second Duration)
Symbol
Value
24
40
225
1.8
556
300
2.4
417
-55 to +150
260
W
P
PK
P
D
R
θ
JA
P
D
R
θ
JA
mW
mW/ C
C/W
mW
mW/ C
C/W
C
C
T
J
,T
STG
T
L
NOTE: 1. Non-Repetitive Current Pulse, per FIG 5 and Derated above T
A
=25 C per FIG 6.
2. FR-5=1.0
_
0.75
_
0.62 in.
3. Alumina=0.4
_
0.3
_
0.024m, 99.5% alumina
_
Electrical Characteristics
(T
A
=25 C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
I
PP
V
C
V
RWM
I
R
θ
V
BR
I
T
V
BR
I
F
V
F
Z
ZT
I
ZK
Z
ZK
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Votlage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coef ficient of V
BR
Forward Current
Forward Voltage @ I
F
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
I
P P
I
I
F
_
_
_
V
C
V
BR
V
R WM
I
R
V
F
I
T
V
Uni-Directional TVS
Device Marking
Item
MMBZ5V6A
Series
Marking
XX=Specific Device Code
(See Table on Page 3)
Eqivalent Circuit diagram
3
1
2
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MMBZ5V6A Series
ELECTRICALCHARACTERISTICS
(T
A
= 25 C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
(V
F
= 0.9 V Max @ I
F
= 10 mA)
24 WATTS
Breakdown Voltage
Max Zener
Impedance
(5)
@ I
T
Max
5.88
6.51
7.14
9.56
10.5
V
C
@ I
P P
(6)
Device
MMBZ5V6A
MMBZ6V2A
MMBZ6V8A
MMBZ9V1A
Device
Marking
5A6
6A2
6A8
9A1
10A
V
RWM
Volts
3.0
3.0
4.5
6.0
6.5
I
R
@
V
RWM
uA
5.0
0.5
0.5
0.3
0.3
V
BR
Min
5.32
5.89
6.46
8.65
9.50
(4)
(V)
Z
ZT
@ I
ZT
Ω
11
Z
ZK
@ I
ZK
Ω
1600
V
C
V
8.0
8.7
9.6
14
14.2
I
PP
A
3.0
2.76
2.5
1.7
1.7
θ
V
BR
mV/ C
1.26
2.80
3.4
7.5
7.5
Nom
5.6
6.2
6.8
9.1
10
mA
20
1.0
1.0
1.0
1.0
mA
0.25
-
-
-
-
-
-
-
-
-
-
-
-
MMB Z10V
A
(V
F
= 0.9 V Max @ I
F
= 10 mA)
V
RWM
Volts
8.5
12
14.5
17
22
26
40 WATTS
I
R
@
V
RWM
nA
200
50
50
50
50
50
Breakdown Voltage
V
BR
(4)
(V)
Min
11.40
14.25
17.10
19.00
25.65
31.35
V
C
@ I
PP
(6)
@ I
T
V
C
V
17
21
25
28
40
46
Device
MMBZ12VA
MMBZ15VA
MMBZ18VA
MMBZ20VA
MMBZ27VA
MMBZ33VA
Device
Marking
12A
15A
18A
20A
27A
33A
I
PP
A
2.35
1.9
1.6
1.4
1.0
0.87
θ
V
BR
mV/ C
7.5
12.3
15.3
17.2
24.3
30.4
Nom
12
15
18
20
27
33
Max
12.60
15.75
18.90
21.00
28.35
34.65
mA
1.0
1.0
1.0
1.0
1.0
1.0
4. V
B R
measured at pulse test current I
T
at an ambient temperature of 25 C .
5. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. T he specified limits are for I
Z(AC )
= 0.1 I
Z(DC )
, with the AC frequency = 1.0 kHz.
6. S urge current waveform per F ig 5 and derate per F ig 6
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MMBZ5V6A Series
18
BREAKDOWN VOLTAGE(V)
WE IT R ON
1000
100
I
R
(nA)
15
12
V
BR
@ I
T
10
1
9
6
3
0.1
0.01
-40
0
-40
0
+50
TEMPERATURE( C)
+100
+150
+25
+85
+125
TEMPERATURE( C)
FIG.1 Typical Breakdown Voltage
Versus Temperature
(Upper curve for each voltage is bidirectional mode,)
lower curve is undirectional mode)
FIG.2 Typical Leakage Current
Versus Temperature
320
280
C, CPACITANCE(
P
F)
P
D
, POWER DISSIPATION(mW)
300
250
ALUMINA SUBSTRATE
200
150
100
FR-5 BOARD
50
0
0
25
50
75
100
125
150
175
TEMPERATURE( C)
240
200
160
120
15 V
5.6 V
80
40
0
0
1
BIAS(V)
2
3
FIG.3 Typical Capacitance Versus Bias Voltage
PEAK PULSE DERATING IN % OF PEAK
POWER OR CURRENT @ T
a
=25 C
FIG.4 Steady State Power Derating Curve
(Upper curve for each voltage is bidirectional mode,)
lower curve is undirectional mode)
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAYS TO
50% OF I
PP
.
_
t
r
<
10us
100
VALUE(%)
PEAK VALUE - I
PP
100
90
80
70
60
50
40
30
20
10
0
HALF VALUE =
I
PP
2
50
t
P
0
0
1
2
3
t, TIME(ms)
4
0
25
50
75
100
125
150
175
200
T
a
, AMBIENT TEMPERATURE( C)
FIG.5 Pulse Waveform
FIG.6 Pulse Derating Curve
WEITRON
MMBZ5V6A Series
WE IT R ON
100
P
PK
, PEAK SURGE POWER(W)
RECTANGULAR
WAVEFORM,
T
A
= 25 C
R E C TANGULAR
WAVEFORM,
T
A
= 25 C
BIDIRECTIONAL
100
P
PK
, PEAK SURGE POWER(W)
BIDIRECTIONAL
10
UNIDIRECTIONAL
10
UNIDIRECTIONAL
1
0.1
1
10
PW, PULSE WIDTH(ms)
100
1000
1
0.1
1
10
100
1000
PW, PULSE WIDTH(ms)
FIG.7 Maximum Non-repetitive Surge
Power, P
PK
Versus PW
Power is defined as V
RSM
x
I
Z
(pk)where V
RSM
is
the clamping voltage at I
Z
(pk).
FIG.8 Maximum Non-repetitive Surge
Power, P
PK
(NOM)Versus PW
Power is defined as V
Z
(NOM)
x
I
Z
(pk)where V
Z
(NOM) is
the nominal Zener voltage measured at the low test current
used for voltage classification
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