电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

MVUPT12TR13E3

产品描述Trans Voltage Suppressor Diode, 150W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2
产品类别分立半导体    二极管   
文件大小165KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
下载文档 详细参数 全文预览

MVUPT12TR13E3概述

Trans Voltage Suppressor Diode, 150W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2

MVUPT12TR13E3规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
零件包装代码DO-216AA
包装说明R-PDSO-G1
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
最小击穿电压13.8 V
外壳连接ANODE
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-216AA
JESD-30 代码R-PDSO-G1
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散150 W
元件数量1
端子数量1
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散2.5 W
认证状态Not Qualified
最大重复峰值反向电压12 V
表面贴装YES
技术AVALANCHE
端子面层MATTE TIN
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

下载PDF文档
UPT5e3 – UPT48e3
UPT5Re3 – UPT48Re3
UPTB8e3 – UPTB48e3
SCOTTSDALE DIVISION
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSORS
DESCRIPTION
Microsemi’s new Powermite UPT series transient voltage suppressors
feature oxide-passivated chips, with high-temperature solder bonds for high
surge capability, and negligible electrical degradation under repeated surge
conditions. Both unidirectional and bidirectional configurations are available.
In addition to its size advantages, Powermite package includes a full
metallic bottom (cathode) that eliminates possibility of solder flux entrapment
at assembly and a unique locking tab serving as an integral heat sink.
Innovative design makes this device fully compatible for use with automatic
insertion equipment.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
DO-216AA
FEATURES
Powermite Package with standoff voltages 5 to 48 V
Both Unidirectional polarities and Bidirectional:
Anode to case bottom (UPT5e3 thru UPT48e3)
Cathode to case bottom (UPT5Re3 thru UPT48Re3)
Bidirectional (UPTB8e3 thru UPTB48e3)
Clamping time less than 100 pico-seconds for
unidirectional
Moisture classification is Level 1 with no dry pack
required per IPC/JEDEC J-STD-020B
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, or JANTXV are available by
adding MQ, MX, or MV, prefixes respectively to part
numbers, e.g. MXUPT15e3, MVUPTB28e3,
MSPUPU10e3, etc.
RoHS Compliant with e3 suffix part number
APPLICATIONS / BENEFITS
Protects sensitive components such as IC’s,
2
CMOS, Bipolar, BiCMOS, ECL, DTL, T L, etc.
Protection from switching transients & induced RF
New improved lower leakage current for the
UPT5Re3
Integral heat sink / locking tabs
Full metallic bottom eliminates flux entrapment
Compliant to IEC61000-4-2 and IEC61000-4-4 for
ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5
with 42 Ohms source impedance:
Class 1: UPT5//UPT5R/UPTB8 to17
Class 2: UPT5//UPT5R/UPTB8 to12
(also add e3 suffix to each part number)
MAXIMUM RATINGS
Operating and Storage Temperature: –65ºC to
+150ºC
Peak Pulse Power at 8/20 µs (See Figure 1 and 2)
UPT5Re3: 600 Watts
UPT5e3 thru UPT48e3: 1000 Watts
UPT8Re3 thru UPT48Re3: 1000 Watts
UPTB8e3 thru UPTB48e3: 1000 Watts
Peak Pulse Power at 10/1000 µs (See Figure 2).
UPT5Re3: 100 Watts
UPT5e3 thru UPT48e3: 150 Watts
UPT8Re3 thru UPT48Re3: 150 Watts
UPTB8e3 thru UPTB48e3: 150 Watts
Impulse Repetition Rate (duty factor): 0.01%
Thermal resistance: 15ºC/W junction to base tab or
240ºC/W junction to ambient when mounted on FR4
PC board with 1 oz copper
Steady-State Power: 2.5 Watts (base tab
≤112ºC)
Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
CASE: Void-free transfer molded thermosetting
epoxy compound meeting UL94V-0
FINISH: Annealed matte-Tin plating over copper
and readily solderable per MIL-STD-750, method
2026
POLARITY: Cathode or anode to TAB 1 (bottom)
as described in Marking below and Figure 5
MARKING:
Anode to TAB 1:
T plus the last two digits of part
number, e.g. UPT5e3 is T05▪, UPT12e3 is T12▪
Cathode to TAB1:
U plus last two digits of part
number, e.g. UPT5Re3 is U05▪, UPT12Re3 is U12▪
Bipolar:
B plus the last two digits of part number,
e.g. UPTB8e3 is B08▪, UPTB12e3 is B12▪, etc.
Please note dot suffix (for e3 suffix)
WEIGHT: 0.016 gram (approximate)
See package dimension on last page
Tape & Reel option: Standard per EIA-481-B using
12 mm tape with 3,000 per 7 inch reel or 12,000
per 13 inch reel (add TR7 or TR13 suffix to part
number)
UPT5-48e3
UPT5R-48Re3 UPTB8-48e3
Copyright
©
2007
6-26-2007 REV G
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1373  1049  200  25  1645  56  55  37  14  48 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved