WEITRON
Surface Mount Zener Diode
P b
Lead(Pb)-Free
Features:
* Planar Die Construction
* 200mW Power Dissipation on FR-4 PCB
* General purpose, Medium Current
* Ideally Suited for Automated Assembly
MMBZ5221BW Series
ZENER DIODE
350m WATTS
3
1
2
3
1
SOT-323(SC-70)
SOT-323 Outline Demensions
Unit:mm
A
SOT-323
B
C
T OP V IE W
D
E
G
H
K
L
J
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
1.15
2.00
-
0.30
1.20
1.80
0.00
0.80
0.42
0.10
Max
0.40
1.35
2.40
0.65
0.40
1.40
2.20
0.10
1.00
0.53
0.25
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WEITRON
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MMBZ5221BW Series
Characteristics
Forward Voltage @ IF=10mA
Total Power Dissipation
(1)
Thermal Resistance Junction to Ambient Air
(1)
Junction and Storage Temperature Range
WEITRON
Symbol
V
F
P
D
R
θJA
T
J
,T
STG
Maximum Ratings and Electrical Characteristics
(T
A
=25°C Unless Otherwise Noted)
Value
0.9
350
357
-65 to +150
Unit
V
mW
K/W
˚C
NOTES: 1. Valid provided that device terminals are kept at ambient temperature.
WEITRON
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MMBZ5221BW Series
Electrical Characteristics
@ T
A
=25˚C unless otherwise specified
Zener Voltage Range
(2)
Type
Number
MMBZ5221BW
MMBZ5223BW
MMBZ5225BW
MMBZ5226BW
MMBZ5227BW
MMBZ5228BW
MMBZ5229BW
MMBZ5230BW
MMBZ5231BW
MMBZ5232BW
MMBZ5234BW
MMBZ5235BW
MMBZ5236BW
MMBZ5237BW
MMBZ5239BW
MMBZ5240BW
MMBZ5241BW
MMBZ5242BW
MMBZ5243BW
MMBZ5245BW
MMBZ5246BW
MMBZ5248BW
MMBZ5250BW
MMBZ5251BW
MMBZ5252BW
MMBZ5254BW
MMBZ5255BW
MMBZ5256BW
MMBZ5257BW
MMBZ5258BW
MMBZ5259BW
Marking
Code
Nom (V)
KC1
KC3
KC5
KG1
KG2
KG3
KG4
KG5
KE1
KE2
KE4
KE5
KF1
KF2
KF4
KF5
KH1
KH2
KH3
KH5
KJ1
KJ3
KJ5
KK1
KK2
KK4
KK5
KM1
KM2
KM3
KM4
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
28
30
33
36
39
Maximum Zener
Impedance
I
ZT
Z
ZT
@I
ZT
Ω
30
30
30
28
24
23
22
19
17
11
7.0
5.0
6.0
8.0
10
17
22
30
13
16
17
21
25
29
33
41
44
49
58
70
80
1200
1300
1600
1600
1700
1900
2000
1900
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
Z
ZK
@I
ZK
=0.25mA
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
8.5
7.8
7.0
6.2
5.6
5.2
5.0
4.5
4.2
3.8
3.4
3.2
Maximum Reverse
Leakage Current
I
R
µA
100
75
50
25
15
10
5.0
5.0
5.0
5.0
5.0
3.0
3.0
3.0
3.0
3.0
2.0
1.0
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
@ V
R
V
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
2.0
3.0
4.0
5.0
6.0
6.5
7.0
8.0
8.4
9.1
9.9
11
12
14
15
17
18
21
21
23
25
27
30
V
Z
@I
ZT
Min (V)
2.28
2.57
2.85
3.14
3.42
3.71
4.09
4.47
4.85
5.32
5.89
6.46
7.13
7.79
8.65
9.50
10.45
11.40
12.35
14.25
15.20
17.10
19.00
20.90
22.80
25.65
26.60
28.50
31.35
34.20
37.05
Max (V)
2.52
2.84
3.15
3.47
3.78
4.10
4.52
4.94
5.36
5.88
6.51
7.14
7.88
8.61
9.56
10.50
11.55
12.60
13.65
15.75
16.80
18.90
21.00
23.10
25.20
28.35
29.40
31.50
34.65
37.80
40.95
Notes: 2. Tested with pulses, Tp ≤ 1.0ms.
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MEMS传感器
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