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MMJT9410

产品描述Bipolar Power Transistors NPN Silicon
产品类别分立半导体    晶体管   
文件大小70KB,共5页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
下载文档 详细参数 选型对比 全文预览

MMJT9410概述

Bipolar Power Transistors NPN Silicon

MMJT9410规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称ON Semiconductor(安森美)
零件包装代码TO-261AA
包装说明PLASTIC, CASE 318E-04, TO-261, 4 PIN
针数4
制造商包装代码CASE 318E-04
Reach Compliance Codeunknow
ECCN代码EAR99
其他特性UL RECOGNIZED
外壳连接COLLECTOR
最大集电极电流 (IC)3 A
集电极-发射极最大电压30 V
配置SINGLE
最小直流电流增益 (hFE)60
JEDEC-95代码TO-261AA
JESD-30 代码R-PDSO-G4
JESD-609代码e0
元件数量1
端子数量4
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)240
极性/信道类型NPN
最大功率耗散 (Abs)3 W
认证状态Not Qualified
表面贴装YES
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间30
晶体管元件材料SILICON
标称过渡频率 (fT)72 MHz

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MMJT9410
Preferred Device
Bipolar Power Transistors
NPN Silicon
Features
Collector −Emitter Sustaining Voltage −
V
CEO(sus)
= 30 Vdc (Min) @ I
C
= 10 mAdc
High DC Current Gain −
h
FE
= 85 (Min) @ I
C
= 0.8 Adc
= 60 (Min) @ I
C
= 3.0 Adc
Low Collector −Emitter Saturation Voltage −
V
CE(sat)
= 0.2 Vdc (Max) @ I
C
= 1.2 Adc
= 0.45 Vdc (Max) @ I
C
= 3.0 Adc
SOT−223 Surface Mount Packaging
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Machine Model, C; > 400 V
Pb−Free Package is Available
http://onsemi.com
POWER BJT
I
C
= 3.0 AMPERES
BV
CEO
= 30 VOLTS
V
CE(sat)
= 0.2 VOLTS
C 2,4
4
C
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Base Current − Continuous
Collector Current
− Continuous
− Peak
Symbol
V
CEO
V
CB
V
EB
I
B
I
C
P
D
Value
30
45
±
6.0
1.0
3.0
5.0
3.0
24
1.7
0.75
T
J,
T
stg
−55 to
+150
°C
A
Y
W
9410
G
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
mW/°C
W
1
B1
E3
Schematic
B
C
E
1 2 3
Top View
Pinout
MARKING
DIAGRAM
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Total P
D
@ T
A
= 25°C mounted on 1” sq.
(645 sq. mm) Collector pad on FR−4
bd material
Total P
D
@ T
A
= 25°C mounted on 0.012” sq.
(7.6 sq. mm) Collector pad on FR−4 bd material
Operating and Storage Junction
Temperature Range
SOT−223 (TO−261)
CASE 318E
STYLE 1
1
AYW
9410
G
G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient on
1” sq. (645 sq. mm) Collector pad on FR−4 bd
material
Thermal Resistance, Junction−to−Ambient on
0.012” sq. (7.6 sq. mm) Collector pad on
FR−4 bd material
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
Symbol
R
qJC
R
qJA
Max
42
75
Unit
°C/W
°C/W
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMJT9410
MMJT9410G
Package
SOT−223
SOT−223
(Pb−Free)
Shipping
1000 / Tape & Reel
1000 / Tape & Reel
R
qJA
165
°C/W
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
October, 2006 − Rev. 6
Publication Order Number:
MMJT9410/D

MMJT9410相似产品对比

MMJT9410 MMJT9410G
描述 Bipolar Power Transistors NPN Silicon Bipolar Power Transistors NPN Silicon
是否Rohs认证 不符合 符合
厂商名称 ON Semiconductor(安森美) ON Semiconductor(安森美)
零件包装代码 TO-261AA TO-261AA
包装说明 PLASTIC, CASE 318E-04, TO-261, 4 PIN SMALL OUTLINE, R-PDSO-G4
针数 4 4
制造商包装代码 CASE 318E-04 CASE 318E-04
Reach Compliance Code unknow compli
ECCN代码 EAR99 EAR99
其他特性 UL RECOGNIZED UL RECOGNIZED
外壳连接 COLLECTOR COLLECTOR
最大集电极电流 (IC) 3 A 3 A
集电极-发射极最大电压 30 V 30 V
配置 SINGLE SINGLE
最小直流电流增益 (hFE) 60 60
JEDEC-95代码 TO-261AA TO-261AA
JESD-30 代码 R-PDSO-G4 R-PDSO-G4
JESD-609代码 e0 e3
元件数量 1 1
端子数量 4 4
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 240 260
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 3 W 3 W
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 Tin/Lead (Sn/Pb) MATTE TIN
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 30 40
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 72 MHz 72 MHz

 
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