MMSZ5221ET1 Series
Preferred Device
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
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•
•
•
•
•
•
•
•
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 2.4 V to 110 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
General Purpose, Medium Current
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8
x
20
ms)
Pb−Free Packages are Available
1
Cathode
2
Anode
2
1
SOD−123
CASE 425
STYLE 1
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
MARKING DIAGRAM
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
≤
25°C
Total Power Dissipation on FR−5 Board,
(Note 3) @ T
L
= 75°C
Derated above 75°C
Thermal Resistance, (Note 2)
Junction−to−Ambient
Thermal Resistance, (Note 2)
Junction−to−Lead
Junction and Storage Temperature Range
Symbol
P
pk
P
D
500
6.7
R
qJA
R
qJL
T
J
, T
stg
340
150
−55 to
+150
mW
mW/°C
°C/W
Device
MMSZ52xxET1
Max
225
Unit
W
1
xxx M
G
G
xxx = Device Code (Refer to page 2)
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
SOD−123
SOD−123
(Pb−Free)
SOD−123
SOD−123
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
10000/Tape & Reel
10000/Tape & Reel
MMSZ52xxET1G
°C/W
MMSZ52xxET3
°C
MMSZ52xxET3G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. Thermal Resistance measurement obtained via infrared Scan Method.
3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended
choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
March, 2006 − Rev. 6
Publication Order Number:
MMSZ5221ET1/D
MMSZ5221ET1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Zener Voltage
(Notes 4 and 5)
Device
Marking
CA1
CA3
CA6
CA8
CA9
CB2
CB3
CB5
CB6
CB7
CB8
CC2
CC4
CC5
CC6
CC7
CC8
CD1
CD3
CD5
V
Z
(V)
Min
2.28
2.57
3.14
3.71
4.09
4.85
5.32
5.89
6.46
7.13
7.79
9.50
11.40
12.35
13.30
14.25
15.20
17.10
19.00
22.80
Nom
2.4
2.7
3.3
3.9
4.3
5.1
5.6
6.2
6.8
7.5
8.2
10
12
13
14
15
16
18
20
24
Max
2.52
2.84
3.47
4.10
4.52
5.36
5.88
6.51
7.14
7.88
8.61
10.50
12.60
13.65
14.70
15.75
16.80
18.90
21.00
25.20
@ I
ZT
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.0
6.2
5.2
Zener Impedance
(Note 6)
Z
ZT
@ I
ZT
W
30
30
28
23
22
17
11
7
5
6
8
17
30
13
15
16
17
21
25
33
Z
ZK
@ I
ZK
W
1200
1300
1600
1900
2000
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
I
R
@ V
R
mA
100
75
25
10
5
5
5
5
3
3
3
3
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
V
1
1
1
1
1
2
3
4
5
6
6.5
8
9.1
9.9
10
11
12
14
15
18
Device*
MMSZ5221ET1
MMSZ5223ET1
MMSZ5226ET1
MMSZ5228ET1
MMSZ5229ET1
MMSZ5231ET1
MMSZ5232ET1
MMSZ5234ET1
MMSZ5235ET1
MMSZ5236ET1
MMSZ5237ET1
MMSZ5240ET1
MMSZ5242ET1
MMSZ5243ET1
MMSZ5244ET1
MMSZ5245ET1
MMSZ5246ET1
MMSZ5248ET1
MMSZ5250ET1
MMSZ5252ET1
4. The type numbers shown have a standard tolerance of
±5%
on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
L
= 30°C
$1°C.
6. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for I
Z(AC)
= 0.1 I
Z(dc)
with the AC frequency = 1 kHz.
*The “G’’ suffix indicates Pb−Free package available. See Ordering Information Table on page 1.
http://onsemi.com
2
MMSZ5221ET1 Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Zener Voltage
(Notes 4 and 5)
Device
Marking
CD6
CD7
CD8
CD9
CE1
CE2
CE3
CE6
CE7
V
Z
(V)
Min
23.75
25.65
26.60
28.50
31.35
34.20
37.05
48.45
53.20
Nom
25
27
28
30
33
36
39
51
56
Max
26.25
28.35
29.40
31.50
34.65
37.80
40.95
53.55
58.80
@ I
ZT
mA
5.0
4.6
4.5
4.2
3.8
3.4
3.2
2.5
2.2
Zener Impedance
(Note 6)
Z
ZT
@ I
ZT
W
35
41
44
49
58
70
80
125
150
Z
ZK
@ I
ZK
W
600
600
600
600
700
700
800
1100
1300
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
I
R
@ V
R
mA
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
19
21
21
23
25
27
30
39
43
Device*
MMSZ5253ET1
MMSZ5254ET1
MMSZ5255ET1
MMSZ5256ET1
MMSZ5257ET1
MMSZ5258ET1
MMSZ5259ET1
MMSZ5262ET1
MMSZ5263ET1
4. The type numbers shown have a standard tolerance of
±5%
on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
L
= 30°C
$1°C.
6. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for I
Z(AC)
= 0.1 I
Z(dc)
with the AC frequency = 1 kHz.
*The “G’’ suffix indicates Pb−Free package available. See Ordering Information Table on page 1.
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3
MMSZ5221ET1 Series
TYPICAL CHARACTERISTICS
q
VZ
, TEMPERATURE COEFFICIENT (mV/°C)
8
7
6
5
4
3
2
1
0
−1
−2
−3
V
Z
@ I
ZT
TYPICAL T
C
VALUES
FOR MMSZ5221BT1 SERIES
q
VZ
, TEMPERATURE COEFFICIENT (mV/°C)
100
TYPICAL T
C
VALUES
FOR MMSZ5221BT1 SERIES
V
Z
@ I
ZT
10
2
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
P
pk
, PEAK SURGE POWER (WATTS)
1.2
P
D
, POWER DISSIPATION (WATTS)
1.0
0.8
0.6
0.4
0.2
0
P
D
versus T
L
1000
RECTANGULAR
WAVEFORM, T
A
= 25°C
100
P
D
versus T
A
10
0
25
50
75
100
T, TEMPERATURE (°C)
125
150
1
0.1
1
10
100
PW, PULSE WIDTH (ms)
1000
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
Z
ZT
, DYNAMIC IMPEDANCE (W)
T
J
= 25°C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
I
F
, FORWARD CURRENT (mA)
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
I
Z
= 1 mA
100
5 mA
20 mA
10
100
10
150°C
1
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
0.4
0.5
75°C 25°C
0°C
1.1
1.2
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
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4
MMSZ5221ET1 Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
1 V BIAS
T
A
= 25°C
I
R
, LEAKAGE CURRENT (mA)
1000
100
10
1
0.1
0.01
+ 25°C
−55°C
0
10
20
30
40
50
60
70
V
Z
, NOMINAL ZENER VOLTAGE (V)
80
90
+150°C
C, CAPACITANCE (pF)
100
BIAS AT
50% OF V
Z
NOM
10
0.001
0.0001
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
0.00001
Figure 7. Typical Capacitance
Figure 8. Typical Leakage Current
100
T
A
= 25°C
I
Z
, ZENER CURRENT (mA)
100
T
A
= 25°C
I
Z
, ZENER CURRENT (mA)
10
10
1
1
0.1
0.1
0.01
0.01
0
2
4
6
8
V
Z
, ZENER VOLTAGE (V)
10
12
10
30
50
70
V
Z
, ZENER VOLTAGE (V)
90
Figure 9. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
100
% OF PEAK PULSE CURRENT
90
80
70
60
50
40
30
20
10
0
0
t
P
t
r
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
20
40
t, TIME (ms)
60
80
Figure 11. 8
×
20
ms
Pulse Waveform
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